ETC PDB-C109

PDB-C109
Blue Enhanced Photoconductive Silicon Photodiode
PACKAGE
DIMENSIONS INCH [mm]
PACKAGE DIMENSIONS INCH [mm]
.215 [5.46]
.065 [1.65]
Ø.555 [14.10]
Ø.545 [13.84]
2X Ø.018 [0.46]
ANODE
Ø.490 [12.45]
Ø.480 [12.19]
79°
VIEWING
Ø.449 [11.40] ANGLE
Ø.444 [11.28]
.295 [7.49]
CATHODE
.016 [0.41] MAX
GLASS ABOVE CAP TOP EDGE
2X 1.50 [38.1]
CHIP
INCH
[mm]
CHIPDIMENSIONS
DIMENSIONS INCH
[mm]
.341 [8.66]
.231 [5.87]
TO-8 PACKAGE
TO-8 PACKAGE
.209 [5.31] ACTIVE AREA
.319 [8.10]
ACTIVE AREA
DESCRIPTION
APPLICATIONS
The PDB-C109 is a blue enhanced PIN silicon
photodiode in a photoconductive mode, packaged in
a TO-8 package.
• Instrumentation
• Industrial
• Medical
SPECTRAL RESPONSE
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
+125
+240
°C
0.40
0.30
0.20
0.10
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
ISC
ID
RSH
CJ
lrange
R
VBR
NEP
tr
CHARACTERISTIC
Short Circuit Current
Dark Current
Shunt Resistance
Junction Capacitance
Spectral Application Range
Responsivity
Breakdown Voltage
Noise Equivalent Power
Response Time**
TEST CONDITIONS
H = 100 fc, 2850 K
VR = 10V
VR = 10 mV
VR =10 V, f = 1 MHz
Spot Scan
l= 450 nm V, VR = 0 V
I = 10 μA
VR = 0V @ l=Peak
RL = 50 Ω,VR = 0 V
RL = 50 Ω,VR = 10 V
MIN
450
30
350
0.15
30
TYP
500
5
100
120
MAX
15
1100
0.17
50
5x10-13
190
13
UNITS
µA
nA
MΩ
pF
nm
A/W
V
W/ √ Hz
nS
**Response time of 10% to 90% is specified at 660nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
www.lasercomponents.com
Issue: 08/06 / V1 / HW / api/si-pin/blue-photo-c/ pdb-c109.pdf
Germany and other countries: LASER COMPONENTS GmbH, Phone: +49 8142 2864 0, Fax: +49 8142 2864 11, [email protected]
Great Britain: LASER COMPONENTS (UK) Ltd., Phone: +44 1245 491 499, Fax: +44 1245 491 801, [email protected]
1150
1100
1050
950
Wavelength (nm)
1000
250
900
0.00
* 1/16 inch from case for 3 seconds max.
850
Soldering Temperature*
-40
°C
°C
800
TS
+150
0.50
750
Operating Temperature
-55
0.60
700
TO
V
650
Storage Temperature
75
600
TSTG
UNITS
550
Reverse Voltage
MAX
500
VBR
MIN
300
PARAMETER
Responsivity (A/W)
SYMBOL
0.70
450
Low noise
Blue enhanced
High shunt resistance
High response
400
•
•
•
•
350
FEATURES