SyncMOS Technologies Inc. S29C51001T/S29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Features Description ■ ■ ■ ■ ■ ■ The S29C51001T/S29C51001B is a high speed 131,072 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, program enable WE, and output enable OE controls to eliminate bus contention. The S29C51001T/S29C51001B offers a combination of features: Boot Block with Sector Erase Mode. The end of program/erase cycle is detected by DATA Polling of I/O7 or by the Toggle Bit I/O6. The S29C51001T/S29C51001B features a sector erase operation which allows each sector to be erased and reprogrammed without affecting data stored in other sectors. The device also supports full chip erase. Boot block architecture enables the device to boot from a protected sector loaded either at the top (S29C51001T) or the bottom (S29C51001B) sector. All inputs and outputs are CMOS and TTL compatible. The S29C51001T/S29C51001B is ideal for applications that require updatable code and data storage. ■ ■ ■ ■ ■ ■ ■ ■ 128Kx8-bit Organization Address Access Time: 70, 90, 120 ns Single 5V ± 10% Power Supply Sector Erase Mode Operation 8KB Boot Block (lockable) 512 bytes per Sector, 256 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Program Cycle Time: 20µs (Max) Minimum 10,000 Erase-Program Cycles Low power dissipation – Active Read Current: 20mA (Typ) – Active Program Current: 30mA (Typ) – Standby Current: 100µA (Max) Hardware Data Protection Low VCC Program Inhibit Below 3.2V Self-timed program/erase operations with endof-cycle detection – DATA Polling – Toggle Bit CMOS and TTL Interface Available in two versions – S29C51001T (Top Boot Block) – S29C51001B (Bottom Boot Block) Packages: – 32-pin Plastic DIP – 32-pin TSOP-I – 32-pin PLCC S29C51001T/S29C51001B V1.0 February 2003 1 SyncMOS Technologies Inc. S29C51001T/S29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY S 29 C 51 001 T – DEVICE OPERATING VOLTAGE 51: 5V BOOT BLOCK LOCATION T: TOP SPEED PKG. P = PDIP T = TSOP-I J = PLCC 70: 70ns 90: 90ns 12: 120ns Pin Configurations N/C A16 A15 A12 A7 A6 A5 1 2 3 4 5 6 7 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 8 9 10 11 12 13 14 15 16 Pin Names 32 31 30 29 28 27 32-Pin PDIP 26 Top View 25 24 23 22 21 20 19 18 17 VCC WE NC A14 A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 A0–A16 Address Inputs I/O0–I/O7 Data Input/Output CE Chip Enable OE Output Enable WE Program Enable VCC 5V ± 10% Power Supply GND Ground NC No Connect 2 NC A16 NC 3 WE A15 4 VCC A12 51001-02 1 32 31 30 A7 5 29 A14 A6 A5 A4 A3 A2 A1 A0 I/O0 6 28 7 27 A13 A8 A9 A11 OE A10 CE I/O7 8 26 32 Pin PLCC Top View 9 25 10 24 11 23 12 22 21 13 14 15 16 17 18 19 20 A11 A9 A8 A13 A14 NC WE VCC N/C A16 A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32-Pin TSOP I Standard Pinout Top View 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 51001-04 S29C51001T/S29C51001B V1.0 February 2003 51001-03 2 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 SyncMOS Technologies Inc. S29C51001T/S29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Functional Block Diagram 1,048,576 Bit Memory Cell Array X-Decoder A0–A16 Address buffer & latches CE OE WE Control Logic Y-Decoder I/O Buffer & Data Latches I/O0–I/O7 51001-05 Capacitance (1,2) Symbol Parameter CIN Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance Test mSetup Typ. Max. Units VIN = 0 6 8 pF VOUT = 0 8 12 pF VIN = 0 8 10 pF NOTE: 1. Capacitance is sampled and not 100% tested. 2. TA = 25°C, VCC = 5V ± 10%, f = 1 MHz. Latch Up Characteristics(1) Parameter Min. Max. Unit Input Voltage with Respect to GND on A9, OE -1 +13 V Input Voltage with Respect to GND on I/O, address or control pins -1 VCC + 1 V -100 +100 mA VCC Current NOTE: 1. Includes all pins except VCC. Test conditions: VCC = 5V, one pin at a time. AC Test Load +5.0 V IN3064 or Equivalent 2.7 kΩ Device Under Test IN3064 or Equivalent CL = 100 pF 6.2 kΩ IN3064 or Equivalent IN3064 or Equivalent 51001-06 S29C51001T/S29C51001B V1.0 February 2003 3 SyncMOS Technologies Inc. S29C51001T/S29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Absolute Maximum Ratings(1) Symbol Parameter Commercial Extended Unit VIN Input Voltage (input or I/O pins) -2 to +7 -2 to +7 V VIN Input Voltage (A9 pin, OE) -2 to +13 -2 to +13 V VCC Power Supply Voltage -0.5 to +5.5 -0.5 to +5.5 V TSTG Storage Temerpature (Plastic) -65 to +125 -65 to +150 °C TOPR Operating Temperature 0 to +70 -40 to + 125 °C 200 (Max.) 200 (Max.) mA IOUT (2) Short Circuit Current NOTE: 1. Stress greater than those listed unders “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. No more than one output maybe shorted at a time and not exceeding one second long. DC Electrical Characteristics (over the commercial operating range) Parameter Name Parameter Test Conditions VIL Input LOW Voltage VIH Min. Max. Unit VCC = VCC Min. — 0.8 V Input HIGH Voltage VCC = VCC Max. 2 — V IIL Input Leakage Current VIN = GND to VCC, VCC = VCC Max. — ±1 µA IOL Output Leakage Current VOUT = GND to VCC, VCC = VCC Max. — ±1 µA VOL Output LOW Voltage VCC = VCC Min., IOL = 2.1mA — 0.4 V VOH Output HIGH Voltage VCC = VCC Min, IOH = -400µA 2.4 — V ICC1 Read Current CE = OE = VIL, WE = VIH, all I/Os open, Address input = VIL/VIH, at f = 1/tRC Min., VCC = VCC Max. — 40 mA ICC2 Program Current CE = WE = VIL, OE = VIH, VCC = VCC Max. — 50 mA ISB TTL Standby Current CE = OE = WE = VIH, VCC = VCC Max. — 2 mA ISB1 CMOS Standby Current CE = OE = WE = VCC – 0.3V, VCC = VCC Max. — 100 µA VH Device ID Voltage for A9 CE = OE = VIL, WE = VIH 11.5 12.5 V IH Device ID Current for A9 CE = OE = VIL, WE = VIH, A9 = VH Max. — 50 µA S29C51001T/S29C51001B V1.0 February 2003 4 SyncMOS Technologies Inc. S29C51001T/S29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY AC Electrical Characteristics (over all temperature ranges) Read Cycle Parameter Name -70 Parameter -90 -120 Min. Max. Min. Max. Min. Max. Unit tRC Read Cycle Time 70 — 90 — — — ns tAA Address Access Time — 70 — 90 — — ns tACS Chip Enable Access Time — 70 — 90 — — ns tOE Output Enable Access Time — 35 — 45 — — ns tCLZ CE Low to Output Active 0 — 0 — — — ns tOLZ OE Low to Output Active 0 — 0 — — — ns tDF Output Enable or Chip Disable to Output in High Z 0 20 0 30 — — ns tOH Output Hold from Address Change 0 — 0 — — — ns Program (Erase/Program) Cycle Parameter Name -70 Parameter -90 -120 Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Unit tWC Program Cycle Time 70 — — 90 — — — — — ns tAS Address Setup Time 0 — — 0 — — — — — ns tAH Address Hold Time 45 — — 45 — — — — — ns tCS CE Setup Time 0 — — 0 — — — — — ns tCH CE Hold Time 0 — — 0 — — — — — ns tOES OE Setup Time 0 — — 0 — — — — — ns tOEH OE High Hold Time 0 — — 0 — — — — — ns tWP WE Pulse Width 35 — — 45 — — — — — ns WE Pulse Width High 35 — — 38 — — — — — ns tDS Data Setup Time 25 — — 30 — — — — — ns tDH Data Hold Time 0 — — 0 — — — — — ns tWHWH1 Programming Cycle — — 20 — — 20 — — — us tWHWH2 Sector Erase Cycle — — 10 — — 10 — — — ms tWHWH3 Chip Erase Cycle — 3 — — — — s tWPH S29C51001T/S29C51001B V1.0 February 2003 5 3 — — SyncMOS Technologies Inc. S29C51001T/S29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Waveforms of Read Cycle tRC ADDRESS tAA tCE CE tOE tDF OE tOLZ WE tCLZ HIGH-Z I/O tOH VALID DATA OUT HIGH-Z VALID DATA OUT 51001-07 tAA Waveforms of WE Controlled-Program Cycle 3rd bus cycle tWC tAS 5555H ADDRESS PA(2) PA tCH tRC tAH CE OE tOES tWHWH1 tWP WE tDF tWPH tCS tDS tOE tDH I/O A0H PD(3) I/O7(1) DOUT tOH 51001-08 NOTES: 1. I/O7: The output is the complement of the data written to the device. 2. PA: The address of the memory location to be programmed. 3. PD: The data at the byte address to be programmed. S29C51001T/S29C51001B V1.0 February 2003 6 SyncMOS Technologies Inc. S29C51001T/S29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Waveforms of CE Controlled-Program Cycle tWC ADDRESS 5555H PA(1) PA tAS tRC tAH WE OE tWP tWHWH1 CE tDF tWPH tOES tDS tOE tDH I/O PD(2) A0H I/O7 DOUT tOH 51001-09 Waveforms of Erase Cycle(1) tWC ADDRESS tAS 5555H 2AAAH 5555H 5555H 2AAAH SA tAH CE OE tWP WE tWPH tCS tDS 10H for Chip Erase tDH I/O AAH 55H 80H AAH 55H 30H 51001-10 NOTES: 1. PA: The address of the memory location to be programmed. 2. PD: The data at the byte address to be programmed. 3. SA: The sector address for Sector Erase. Address = don’t care for Chip Erase. S29C51001T/S29C51001B V1.0 February 2003 7 SyncMOS Technologies Inc. S29C51001T/S29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Waveforms of DATA Polling Cycle tCH CE tDF tOE OE tOEH tCE WE tOH tWHWH1 I/O7 I/O0-I/O6 I/O7 I/O7 INVALID I/O0-I/O6 VALID DATA OUT VALID DATA OUT HIGH-Z HIGH-Z 51001-11 Waveforms of Toggle Bit Cycle CE tOEH WE OE I/O6 51001-12 S29C51001T/S29C51001B V1.0 February 2003 8 SyncMOS Technologies Inc. S29C51001T/S29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Functional Description S29C51001T The S29C51001T/S29C51001B consists of 256 equally-sized sectors of 512 bytes each. The 8 KB lockable Boot Block is intended for storage of the system BIOS boot code. The boot code is the first piece of code executed each time the system is powered on or rebooted. The S29C51001 is available in two versions: the S29C51001T with the Boot Block address starting from 1E000H to 1FFFFH, and the S29C51001B with the Boot Block address starting from 00000H to 1FFFFH. 8KB Boot Block S29C51001B 1FFFFH 512 1E000H 512 512 512 • • • • • • 512 512 512 01FFFH 512 8KB Boot Block 00000H 00000H Read Cycle 51001-13 A read cycle is performed by holding both CE and OE signals LOW. Data Out becomes valid only when these conditions are met. During a read cycle WE must be HIGH prior to CE and OE going LOW. WE must remain HIGH during the read operation for the read to complete (see Table 1). 8KB Boot Block = 16 Sectors During the byte program cycle, addresses are latched on the falling edge of either CE or WE, whichever is last. Data is latched on the rising edge of CE or WE, whichever is first. The byte program cycle can be CE controlled or WE controlled. Output Disable Sector Erase Cycle Returning OE or CE HIGH, whichever occurs first will terminate the read operation and place the l/O pins in the HIGH-Z state. The S29C51001T/S29C51001B features a sector erase operation which allows each sector to be erased and reprogrammed without affecting data stored in other sectors. Sector erase operation is initiated by using a specific six-bus-cycle sequence: Two unlock program cycles, a setup command, two additional unlock program cycles, and the sector erase command (see Table 2). A sector must be first erased before it can be reprogrammed. While in the internal erase mode, the device ignores any program attempt into the device. The internal erase completion can be determined via DATA polling or toggle bit. The S29C51001T/S29C51001B is shipped with pre-erased sectors (all bits = 1). Standby The device will enter standby mode when the CE signal is HIGH. The l/O pins are placed in the HIGH-Z, independent of the OE signal. Byte Program Cycle The S29C51001T/S29C51001B is programmed on a byte-by-byte basis. The byte program operation is initiated by using a specific four-buscycle sequence: two unlock program cycles, a program setup command and program data program cycles (see Table 2). Table 1. Operation Modes Decoding Decoding Mode CE OE WE A0 A1 A9 I/O Read VIL VIL VIH A0 A1 A9 READ Byte Write VIL VIH VIL A0 A1 A9 PD Standby VIH X X X X X HIGH-Z Autoselect Device ID VIL VIL VIH VIH VIL VH CODE Autoselect Manufacture ID VIL VIL VIH VIL VIL VH CODE Enabling Boot Block Protection Lock VIL VH VIL X X VH X S29C51001T/S29C51001B V1.0 February 2003 9 SyncMOS Technologies Inc. S29C51001T/S29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Decoding Mode CE OE WE A0 A1 A9 I/O Disabling Boot Block Protection Lock VH VH VIL X X VH X Output Disable VIL VIH VIH X X X HIGH-Z NOTES: 1. X = Don’t Care, VIH = HIGH, VIL = LOW. VH = 12.5V Max. 2. PD: The data at the byte address to be programmed. Table 2. Command Codes First Bus Program Cycle Second Bus Program Cycle Third Bus Program Cycle Fourth Bus Program Cycle Fifth Bus Program Cycle Six Bus Program Cycle Command Sequence Address Data Address Data Address Data Address Data Address Data Address Data Read XXXXH F0H Read 5555H AAH 2AAAH 55H 5555H F0H RA RD Autoselect 5555H AAH 2AAAH 55H 5555H 90H 00H 40H 01H 01H(1) A1H(2) Byte Program 5555H AAH 2AAAH 55H 5555H A0H PA PD(4) Chip Erase 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H 5555H 10H Sector Erase 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H PA(3) 30H NOTES: 1. Top Boot Sector 2. Bottom Boot Sector 3. PA: The address of the memory location to be programmed. 4. PD: The data at the byte address to be programmed. Chip Erase Cycle DATA Polling (I/O7) The S29C51001T/S29C51001B features a chiperase operation. The chip erase operation is initiated by using a specific six-bus-cycle sequence: two unlock program cycles, a setup command, two additional unlock program cycles, and the chip erase command (see Table 2). The chip erase operation is performed sequentially, one sector at a time. When the automated on chip erase algorithm is requested with the chip erase command sequence, the device automatically programs and verifies the entire memory array for an all zero pattern prior to erasure The automatic erase begins on the rising edge of the last WE or CE pulse in the command sequence and terminates when the data on DQ7 is “1”. The S29C51001T/S29C51001B features DATA polling to indicate the end of a program cycle. When the device is in the program cycle, any attempt to read the device will received the complement of the loaded data on I/O7. Once the program cycle is completed, I/O7 will show true data, and the device is then ready for the next cycle. Toggle Bit (I/O6) The S29C51001T/S29C51001B also features another method for determining the end of a program cycle. When the device is in the program cycle, any attempt to read the device will result in l/O6 toggling between 1 and 0. Once the program is completed, the toggling will stop. The device is then ready for the next operation. Examining the toggle bit may begin at any time during a program cycle. Program Cycle Status Detection There are two methods for determining the state of the S29C51001T/S29C51001B during a program (erase/program) cycle: DATA Polling (I/O7) and Toggle Bit (I/O6). S29C51001T/S29C51001B V1.0 February 2003 10 SyncMOS Technologies Inc. S29C51001T/S29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Boot Block Protection Device ID The S29C51001T/S29C51001B features hardware Boot Block Protection. The boot block sector protection is enabled when high voltage (12.5V) is applied to OE and A9 pins with CE pin LOW and WE pin lOW. The sector protection is desabled when high voltage is applied to OE, CE and A9 pins with WE pin LOW. Other pins can be HIGH or LOW. This is shown in table 1. In Autoselect mode, performing a read at address XXXXH will determine whether the device is a Top Boot Block device or a Bottom Boot Block device. If the data is 01H, the device is a Top Boot Block. If the data is A1H, the device is a Bottom Boot Block device (see Table 3). In addition, the device ID can also be read via the command register when the device is erased or programmed in a system without applying high voltage to the A9 pin. When A0 is HIGH, the device ID is presented at the outputs. Autoselect The S29C51001T/S29C51001B features an Autoselect mode to identify the Boot Block (protected/unprotected), the Device (Top/Bottom), and the manufacturer ID. To get to the Autoselect mode, a high voltage (VH) must be applied to the A9 pin. Once the A9 signal is returned to LOW or HIGH, the device will return to the previous mode. Manufacturer ID In Autoselect mode, performing a read at address. XXXX0H will determine the manufacturer ID. 40H is the manufacturer code for SyncMOS Flash. In addition the manufacturer ID can also be read via the command register when the device is erased or programmed in a system without applying high voltage to the A9 pin. when A0 is LOW, the manufacturer ID is presented at the outputs. Boot Block Protection Status In Autoselect mode, performing a read at address 3CXX2H or address 0CXX2H will indicate if the Top Boot Block sector or the Bottom Boot Block sector is locked out. If the data is 01H, the Top/Bottom Boot Block is protected. If the data is 00H, the Top/Bottom Boot Block is unprotected. (see Table 3.) Hardware Data Protection VCC Sense Protection: the program operation is inhibited when VCC is less than 2.5V. Noise Protection: a CE or WE pulse of less than 5ns will not initiate a program cycle. Program Inhibit Protection: holding any one of OE LOW, CE HIGH or WE HIGH inhibits a program cycle. Table 3. Autoselect Decoding Address Decoding Mode Boot Block A0 A1 A2–A13 A14–A16 Boot Block Protection Top VIL VIH X VIH 01H: protected Bottom VIL VIH X VIL 00H: unprotected Top VIH VIL X X Device ID Bottom Manufacture ID 01H A1H VIL VIL NOTE: 1. X = Don’t Care, VIH = HIGH, VIL = LOW. S29C51001T/S29C51001B V1.0 February 2003 Data I/O0–I/O7 11 X X 40H SyncMOS Technologies Inc. S29C51001T/S29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Byte Program Algorithm Chip/Sector Erase Algorithm Write Program Command Sequence Write Erase Command Sequence Add/Data 5555H/AAH Add/Data 5555H/AAH 2AAAH/55H 2AAAH/55H Four Bus Cycle Sequence 5555H/A0H 5555H/80H Six Bus Cycle Sequence PA/PD 5555H/AAH DATA Polling (I/O7) or Toggle Bit (I/O6) 2AAAH/55H 5555H/10H (Chip Erase) PA/30H (Sector Erase No Verify Byte? Yes DATA Polling or Toggle Bit Successfully Completed Programming Completed Erase Complete 51001-14 S29C51001T/S29C51001B V1.0 February 2003 12 SyncMOS Technologies Inc. S29C51001T/S29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY DATA Polling Algorithm No Toggle Bit Algorithm Read I/O7 Address = PBA(1) Read I/O6 I/O7 = Data Read I/O6 Yes Yes I/O6 Toggle Program Done No Program Done 51002-17 NOTE: 1. PBA: The byte address to be programmed. S29C51001T/S29C51001B V1.0 February 2003 13 SyncMOS Technologies Inc. S29C51001T/S29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Package Diagrams 32-pin Plastic DIP 1.660 MAX. 15° MAX INDEX-1 EJECTOR MARK .600 TYP 0.545/0.555 INDEX-2 +.004 .010 – .0004 .050 MAX 0.210 MAX 0.120 MIN .100 TYP +.006 .018 – .002 +.012 .047 – 0 0.010 MIN .032 +.012 –0 32-pin PLCC 20 19 18 17 16 15 14 21 13 22 12 23 11 24 10 25 9 26 8 27 7 28 .590 ± .005 .550 ± .003 6 29 30 31 32 1 2 3 4 5 .045X45° .450 ± .003 .110 .490 ± .005 .136 ± .003 .046 ± .003 .025 .050 TYP 30° .017 .420 ± .003 S29C51001T/S29C51001B V1.0 February 2003 3° - 6° 3° - 6° 14 3° - 6° SyncMOS Technologies Inc. S29C51001T/S29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY 32-pin TSOP-I Units in inches Detail “A” 0.787 ± 0.008 0.010 0.315 TYP. (0.319 MAX.) 0.024 ± 0.004 0.724 TYP. (0.728 MAX.) 0.035 ± 0.002 SEATING PLANE See Detail “A” 0.032 TYP. 0.005 MIN. 0.007 MAX. S29C51001T/S29C51001B V1.0 February 2003 0.047 MAX. 0.020 MAX. 0.020 SBC 0.003 MAX 15 0.009 ± 0.002 SyncMOS Technologies Inc. S29C51001T/S29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Sales Office : No. 1, Creation Rd. 1, Science-Based Industrial Park, Hsinchu, Taiwan, R.O.C. Tel : 886-3-5792926 Fax : 886-3-5792953 Note 1 : publication date : May 1999. Rev. A Note 2 : all data and specification are subject to change without notice. 16 S29C51001T/S29C51001B V1.0 February 2003