1N5820-1N5822 1N5820 - 1N5822 Features • 3.0 ampere operation at TA = 95°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-201AD COLOR BAND DENOTES CATHODE Schottky Rectifiers Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Parameter Units 1N5820 1N5821 1N5822 20 30 40 VRRM Maximum Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current 3/8 " lead length @ TA = 95°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature Value Units IFSM Tstg TJ V 3.0 A 80 A -65 to +125 °C -65 to +125 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter PD Power Dissipation 3.6 W RθJA Thermal Resistance, Junction to Ambient 28 °C/W Electrical Characteristics Symbol TA = 25°C unless otherwise noted Device Parameter VF Forward Voltage IR Reverse Current @ rated VR CT Total Capacitance VR = 4.0 V, f = 1.0 MHz 2001 Fairchild Semiconductor Corporation @ 3.0 A @ 9.4 A TA = 25°C TA = 100°C Units 1N5820 1N5821 1N5822 475 850 500 900 0.5 20 525 950 190 mV mV mA mA pF 1N5820-1N5822, Rev. C (continued) 4 20 T J = 25ºC µS Pulse Width = 200µ 10 3 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" 9.5 mm LEAD LENGTHS 2 1 0 Forward Current, IF [A] Average Rectified Forward Current, IF [A] Typical Characteristics 0 20 40 60 80 100 Lead Temperature [ºC] 120 1N5821 1 0.3 0.4 0.5 0.6 0.7 Forward Voltage, VF [V] 80 0.9 100 1N5820 70 8.3ms Single Half Sine-Wave JEDEC Method 60 50 40 30 20 10 0.8 Figure 2. Forward Voltage Characteristics Reverse Current, IR [mA] Peak Forward Surge Current, IFSM [A] Figure 1. Forward Current Derating Curve 1N5822 0.1 0.2 140 1N5820 1 2 5 10 20 Number of Cycles at 60Hz 50 100 Total Capacitance, CT [pF] Figure 3. Non-Repetitive Surge Current T J = 125ºC 1N5822 10 1N5821 T J = 75ºC 1 T J = 25ºC 0.1 0.01 5 10 15 20 25 30 R everse Voltage, VR [V] 35 40 Figure 4. Reverse Current vs Reverse Voltage 1000 800 600 400 200 100 80 60 40 20 10 0.1 0.4 1 4 10 Reverse Voltage, VR [V] 40 100 Figure 5. Total Capacitance 2001 Fairchild Semiconductor Corporation 1N5820-1N5822, Rev. C 1N5820-1N5822 Schottky Rectifiers TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4