SBL1030CT thru SBL1045CT Low VF Schottky Barrier Rectifiers A C A Dimensions TO-220AB A C A C(TAB) A B C D E F G H J K M N Q R A=Anode, C=Cathode, TAB=Cathode SBL1030CT SBL1035CT SBL1040CT SBL1045CT Symbol VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 Dim. VDC V 30 35 40 45 Characteristics Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Maximum Ratings Unit I(AV) Maximum Average Forward Rectified Current @TC=95oC 10 A IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) 125 A Maximum Forward Voltage At 5.0A DC (Note 1) 0.55 V 0.5 50 mA VF IR Maximum DC Reverse Current At Rated DC Blocking Voltage CJ Typical Junction Capacitance Per Element (Note 2) ROJC TJ TSTG o @TJ=25 C @TJ=100oC 250 Typical Thermal Resistance (Note 3) 3.0 Operating Temperature Range Storage Temperature Range pF o C/W -55 to +125 o -55 to +150 o NOTES: 1. 300us Pulse Width, 2% Duty Cycle. 2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 3. Thermal Resistance Junction To Case. FEATURES MECHANICAL DATA * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications * Case: TO-220AB molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any C C SBL1030CT thru SBL1045CT Low VF Schottky Barrier Rectifiers FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 12 10 8 6 4 RESISTIVE OR INDUCTIVE LOAD 2 0 25 50 75 100 125 150 175 150 125 100 75 50 25 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 0 1 2 5 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 20 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 1000 INSTANTANEOUS FORWARD CURRENT ,(A) 100 100 10 TJ = 100 C 1.0 TJ = 75 C TJ = 25 C 0.1 0.01 10 1.0 TJ = 25 C PULSE WIDTH 300us 300ua 2% Duty cycle 0.1 0 20 40 60 80 100 140 120 0.1 0.2 0.3 0.4 FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 100 TJ = 25 C, f= 1MHz 10 0.1 1 0.5 0.6 0.7 0.8 0.9 INSTANTANEOUS FORWARD VOLTAGE , VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE (VOLTS) CAPACITANCE , (pF) INSTANTANEOUS REVERSE CURRENT ,(mA) 10 NUMBER OF CYCLES AT 60Hz 4 10 REVERSE VOLTAGE , VOLTS 100 1.0