INTERSEMA MS7202-A2

PRESSURE SENSOR DIE (0-2 BAR)
FOR HARSH ENVIRONMENT
MS7202-A2
•
•
•
•
•
•
0 to 200 kPa range (2 bar or 29 PSI)
Uncompensated absolute pressure sensor die
Piezoresistive silicon micromachined sensor
Hermetic sensor, temperature up to 150°C
Pads on one side
RoHS-compatible & Pb-free1
DESCRIPTION
The MS7202-A2 is an absolute silicon micro-machined pressure sensor for harsh environment, with the pads on
one side. A vacuum reference cavity is sealed on top of the sensitive silicon membrane by the anodic bonding of
a glass cap. The pressure, applied on the backside, is converted in electrical signal by piezo-resistors implanted
in the silicon membrane. To improve the sensor stability, a drilled glass is bonded on the backside. As the
pressure port consists of glass and silicon, both stable in most of the chemicals, the MS7202-A2 is suitable for
media-resistive applications.
FEATURES
•
•
•
Media resistive pressure sensor die
Typical output Span 150mV @ 5 V
Temperature range -40°…+150°C
•
•
•
Linearity 0.15% (typical)
Die size 1.35 x 1.79 mm2
Low cost, high reliability & stability
APPLICATION
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•
Harsh environments
Absolute pressure sensor systems
ELECTRICAL CONNECTIONS
Pin
Symbol
Description
1
EPI / I diode (-)
Epi contact / Cathode of diode (n)
2
Vs+ / I diode (+)
Supply voltage / Anode of diode (p)
3
Out+
Positive output*
4
GND
Ground
5
Out-
Negative output*
*Positive output for pressure applied backside
1
The European RoHS directive 2002/95/EC (Restriction of the use of certain Hazardous Substances in electrical and electronic equipment)
bans the use of lead, mercury, cadmium, hexavalent chromium and polybrominated biphenyls (PBB) or polybrominated diphenyl ethers
(PBDE).
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BOND PAD CONFIGURATION
Important remarks:
The epitaxial layer is not connected to the Vs+ pin on the
die, this is to allow temperature measurement with the
diode. The epi contact and the cathode of the diode have
the same electrical potential. To avoid bias effects, diode
and bridge cannot be used simultaneously.
As the sensing elements are diffused resistances, the
voltage applied on the ground pads (GND) and on the
supply voltage (Vs+) have to be lower or equal than the
voltage applied on the epi contact (EPI). For better stability it
is good to define the potential of the EPI.
Gold ball bonding or aluminium wedge bonding can be used
to wire-bond the sensor. The quality of the wire-bonding is
equipment and process dependant. For this reason, it is
strongly recommended that a thorough wire-bonding
qualification is made by the end user if the sensor is going
to be operated over an extended temperature range.
LAYOUT
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FULL SCALE PRESSURE
kPa
bar
mbar
PSI
atm
mm Hg
m H2O
Inches H2O
200
2
2000
29
1.974
1500.12
20
802
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply voltage, bridge
Supply current diode
Storage temperature
Pressure overload
Symbol
Vs+
I diode (+)
TS
Conditions
Min
o
Ta = 25 C
-40
Max
Unit
12
100
+150
10
µA
o
C
Bar
V
ELECTRICAL CHARACTERISTICS
(Reference conditions: Supply Voltage VS+ = 5 Vdc; Ambient Temperature Ta = 25°C )
Parameter
Operating Pressure Range
Min
Typ
Max
Unit
0
2
Bar
Operating Temperature Range
-40
150
°C
Bridge Resistance
3.0
3.4
3.8
kΩ
Full-scale span (FS)
120
150
180
mV
Zero Pressure Offset
-40
0
40
mV
Linearity
± 0.15
± 0.3
Diode forward voltage (VF)
0.550
Temperature Coefficient of Resistance
Span
Offset
Diode
+ 2700
- 1700
- 80
+ 3100
- 2100
+ 3400
- 2400
+ 80
-2.2
Notes
% FS
1
V
2
ppm/°C
ppm/°C
µV/°C
mV/°C
3
2
Pressure Hysteresis
-0.2
0.2
% FS
4
Repeatability
-0.2
0.2
% FS
5
Temperature Hysteresis
-0.15
0.15
% FS
6
NOTES
1) Deviation at one half full-scale pressure from the least squares best line fit over pressure range (0 to 2 bar).
2) The forward voltage of the diode is measured when driving it with a typical value of 40 µA.
3) Slope of the endpoint straight line from 25°C to 60°C.
4) Output deviation at any pressure within the specified range, when this pressure is cycled to and from the
minimum or maximum rated pressure, at 25°C.
5) Same as 4) after 10 pressure cycles.
6) Maximum difference in offset after one thermal cycle from -40°C to +150°C.
TEMPERATURE COMPENSATION
The diode between the piezo diffusion and the epi contact can be used for temperature measurement. The
forward voltage of the diode is measured on I diode (-) when a typical current of 40 µA fed in I diode (+).
Temperature measurement cannot be done at the same time as pressure sensing due to bias effects.
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PICKING TOOLS
2
2
The MS7202 sensors have a topside glass cap (1.11 x 1.35 mm ) and a backside glass (1.79 x 1.35 mm ). The
pick and place tool has to be of a soft material such as rubber (Hardness 78-97 Shore A). Its external size must
fit the glass cap. Successful tests were done with some tools of SPT (see SPT drawing and references below).
SPT references
External dimension
Internal dimensions
RTR-A2-045x045
TL & TW: 0.045 inch /1.14 mm
∅H: 0.025 inch / 0.63 mm
WIRE BONDING
2
2
The bondable area is 100 x 100 µm for the EPI pad and 100 x 285 µm for the other pads. The location of the
bonding pads is close to the top Pyrex glass edge reducing the possible size and angle of the bonding capillary.
Refer to the detail view D on the layout for more precision.
ORDERING INFORMATION
Product Code
MS7202-A2
type
Absolute
Product
2 bar pressure sensor die for harsh environment sawn on b/f
Art.-Nr.
720225021
The MS7202-A2 dice are supplied sawn on blue foil, mounted on plastic rings
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FACTORY CONTACTS
Factory and European Sales office
Intersema Sensoric SA
Ch. Chapons-des-Prés 11
CH-2022 Bevaix
Switzerland
Phone:
+41 32 847 9550
Fax:
+41 32 847 9569
e-mail:
Website: www.intersema.ch
USA
Measurement Specialties Inc.
1000 Lucas Way
Hampton, VA 23666
USA
Phone:
Fax:
e-mail:
Website:
+1 800 555 1551
+1 757 766 4297
[email protected]
www.meas-spec.com
Phone:
Fax:
e-mail:
Website:
+86 755 8330 1004
+86 755 8330 6797
[email protected]
www.meas-spec.com
ASIA
Measurement Specialties (China), Ltd.
F1.6-4D, Tian An Development
Compound
Shenzhen, China 518048
NOTICE
Intersema reserves the right to make changes to the products contained in this data sheet in order to improve the design or performance
and to supply the best possible products. Intersema assumes no responsibility for the use of any circuits shown in this data sheet, conveys
no license under any patent or other rights unless otherwise specified in this data sheet, and makes no claim that the circuits are free from
patent infringement. Applications for any devices shown in this data sheet are for illustration only and Intersema makes no claim or
warranty that such applications will be suitable for the use specified without further testing or modification.
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