Inchange Semiconductor Product Specification 2SA1491 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SC3855 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -140 V VCEO Collector-emitter voltage Open base -140 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -10 A IB Base current -4 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ B TC=25℃ Inchange Semiconductor Product Specification 2SA1491 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V ICBO Collector cut-off current VCB=-140V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -100 μA hFE DC current gain IC=-3A ; VCE=-4V Transition frequency IC=0.5A ; VCE=-12V fT CONDITIONS MIN TYP. MAX -140 UNIT V 50 20 MHz 0.30 μs 0.90 μs 0.20 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=-5A;RL=12Ω IB1=- IB2=-0.5A VCC=60V 2 Inchange Semiconductor Product Specification 2SA1491 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 Inchange Semiconductor Product Specification 2SA1491 Silicon PNP Power Transistors 4