ISC S2000A

Inchange Semiconductor
Product Specification
S2000A
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3P(H)IS package
・High voltage ,high speed
・Low collector saturation voltage
APPLICATIONS
・Color TV horizontal output applications
・Color TV switching regulator applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
8
A
ICM
Collector current-peak
15
A
IB
Base current
4
A
PC
Collector power dissipation
125
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
S2000A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IB=500mA ;VBE=-1.7V;L=40mH
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
VCE(sat)
Collector-emitter saturation voltage
IC=4.5A ;IB=2A
1.0
V
VBE(sat)
Base-emitter saturation voltage
IC=4.5A ;IB=1.0A
1.2
V
ICBO
Collector cut-off current
VCB=1500V; VBE=0
1
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
10
30
hFE-2
DC current gain
IC=4.5A ; VCE=5V
4.5
9
COB
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
95
pF
Transition frequency
IC=0.1A ; VCE=10V
2
MHz
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
700
V
5
V
Inchange Semiconductor
Product Specification
S2000A
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3