APT50M85JVFR
Ω
50A 0.085Ω
500V
POWER MOS V ®
FREDFET
S
S
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
27
2
T-
D
G
SO
"UL Recognized"
• Fast Recovery Body Diode
• 100% Avalanche Tested
• Lower Leakage
• Popular SOT-227 Package
ISOTOP ®
D
FREDFET
G
• Faster Switching
Unless stated otherwise, Microsemi discrete FREDFETs contain a single FREDFET die. This device is made with
two parallel FREDFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
MAXIMUM RATINGS
Symbol
VDSS
ID
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT50M85JVFR
UNIT
500
Volts
Drain-Source Voltage
50
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
500
Watts
4
W/°C
VGSM
PD
TJ,TSTG
200
Linear Derating Factor
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
-55 to 150
Operating and Storage Junction Temperature Range
TL
1
°C
300
30
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
Amps
30
4
mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
Volts
50
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
TYP
MAX
0.085
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
500
UNIT
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
2000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
050-5621 Rev A 6 - 2006
Symbol
APT50M85JVFR
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
MIN
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
9000
10800
Coss
Output Capacitance
VDS = 25V
1240
1740
Crss
Reverse Transfer Capacitance
f = 1 MHz
500
750
Qg
Total Gate Charge
VGS = 10V
390
535
Qgs
Gate-Source Charge
VDD = 0.5 VDSS
Qgd
Gate-Drain ("Miller ") Charge
ID = ID [Cont.] @ 25°C
42
170
65
255
VGS = 15V
15
30
t d(on)
3
Turn-on Delay Time
tr
Rise Time
t d(off)
Turn-off Delay Time
tf
VDD = 0.5 VDSS
17
34
ID = ID [Cont.] @ 25°C
52
80
RG = 0.6Ω
7
14
TYP
MAX
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
IS
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
dv/
MIN
50
Continuous Source Current (Body Diode)
Peak Diode Recovery
dt
200
(Body Diode)
(VGS = 0V, IS = -ID [Cont.])
dv/ 5
dt
UNIT
Amps
1.3
Volts
5
V/ns
t rr
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
300
Tj = 125°C
600
Q rr
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
2.5
Tj = 125°C
8
IRRM
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
16
Tj = 125°C
28
ns
µC
Amps
THERMAL / PACKAGE CHARACTERISTICS
Characteristic
Symbol
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
MAX
0.25
40
VIsolation
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Torque
Maximum Torque for Device Mounting Screws and Electrical Terminations.
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
2500
13
D=0.5
0.1
0.2
0.05
0.1
0.05
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5621 Rev A 6 - 2006
0.3
0.005
0.01
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
lb•in
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 2.89mH, R = 25Ω, Peak I = 30A
j
G
L
5 I - -I [Cont.], di/ = 100A/µs, V
S
D
DD - VDSS, Tj - 150°C, RG = 2.0Ω,
dt
VR = 200V
0.02
°C/W
Volts
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.01
UNIT
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT50M85JVFR
150
VGS=7V, 10V & 15V
120
6V
90
5.5V
60
5V
30
4.5V
ID, DRAIN CURRENT (AMPERES)
TJ = +25°C
120
TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
90
60
TJ = +125°C
30
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
50
40
30
20
10
0
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
25
6V
90
5.5V
60
5V
30
4.5V
1.5
V
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
1.4
1.3
1.2
VGS=10V
VGS=20V
1.1
1.0
0.9
0
30
60
90
120
150
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-50
1.2
2.5
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
VGS=7V
0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
TJ = -55°C
VGS=10V
120
4V
0
4
8
12
16
20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
4V
0
0
50
100
150
200
250
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
150
VGS=15V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5621 Rev A 6 - 2006
ID, DRAIN CURRENT (AMPERES)
150
APT50M85JVFR
ID, DRAIN CURRENT (AMPERES)
30,000
Ciss
C, CAPACITANCE (pF)
10,000
Graph removed
5,000
Coss
Crss
1,000
500
100
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D
D
VDS=100V
16
VDS=250V
12
VDS=400V
8
4
0
0
150
300
450
600
750
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
50
10
5
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
050-5621 Rev A 6 - 2006
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
"UL Recognized" File No. E145592
ISOTOP® is a Registered Trademark of SGS Thomson. Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.