TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/262 Devices Qualified Level 2N1722 JAN JANTX 2N1724 MAXIMUM RATINGS Ratings Symbol Value Units VCEO VCBO VEBO IC PT 80 175 10 5.0 3.0 50 175 -65 to +200 Vdc Vdc Vdc Adc W W Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +1000C (2) TOP, Temperature Range: Operating Storage Junction Tstg 1) Derate linearly 20 mW/0C for TA between +250C and +1750C 2) Derate linearly 666 mW/0C for TC between +1000C and +1750C TO-61* 2N1724 0 C TO-53* 2N1722 *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit V(BR)CEO 80 Vdc V(BR)EBO 10 Vdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc Emitter-Base Breakdown Voltage IE = 10 mAdc Collector-Emitter Cutoff Current VCE = 60 Vdc Collector-Base Cutoff Current VCB = 175 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 ICES 300 µAdc ICBO 5.0 mAdc IEBO 400 µAdc 120101 Page 1 of 2 2N1722, 2N1724 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. hFE 30 15 30 120 Unit ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 2.0 Adc, VCE = 15 Vdc IC = 5.0 Adc, VCE = 15 Vdc IC = 100 mAdc, VCE = 15 Vdc Collector-Emitter Saturation Voltage IC = 2.0 Adc, IB = 200 mAdc Base-Emitter Saturation Voltage IC = 2.0 Adc, IB = 200 mVdc VCE(sat) 0.6 Vdc VBE(sat) 1.2 Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 500 mAdc, VCE = 15 Vdc; f = 10 MHz Output Capacitance VCB = 15 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 hfe Cobo 1.0 5.0 550 pF 120101 Page 2 of 2