LIGITEK LA62B-3-VYSBKS-10-PF

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
LED ARRAY
Pb
Lead-Free Parts
LA62B-3/VYSBKS-10-PF
DATA SHEET
DOC. NO :
QW0905- LA62B-3/VYSBKS-10-PF
REV.
:
A
DATE
: 07 - Aug. - 2008
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 1/5
PART NO. LA 62B-3/VYSBKS-10-PF
Package Dimensions
2.1±0.5
7.0
6.35
3.2
3.0
7.37
5.08
□0.5TYP
2.9±0.5
2.54TYP
2.54TYP
1
2
5.4±0.5
3
SBKS
VY
1 2 3
1.CATHODE YELLOW
2.COMMON ANODE
3.CATHODE BLUE
LVYSBKS2392/R1/H
3.0
5.0
□0.5
TYP
18MIN
2.0MIN
2.0MIN
2.54TYP
2.54TYP
1
2
3
SBKS
VY
1 2 3
Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
1.CATHODE BLUE
2.COMMON ANODE
3.CATHODE YELLOW
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LA 62B-3/VYSBKS-10-PF
Page 2/5
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
VY
SBKS
Forward Current
IF
30
30
mA
Peak Forward Current
Duty 1/10@10KHz
IFP
60
100
mA
Power Dissipation
PD
75
120
mW
Reverse Current @5V
Ir
10
50
μA
Electrostatic Discharge
ESD
2000
500
V
Operating Temperature
Topr
-20 ~ +80
℃
Storage Temperature
Tstg
-30 ~ +100
℃
Soldering Temperature
Tsol
Max 260 ℃ for 5 sec Max
(2mm from body)
Typical Electrical & Optical Characteristics (Ta=25 ℃)
PART NO
MATERIAL
COLOR
Emitted
GaAsP/GaP
Dominant Spectral
wave halfwidth
length △λnm
λDnm
Lens
Yellow
LA62B-3/VYSBKS-10-PF
Forward
voltage
@20mA(V)
Luminous
Viewing
intensity
angle
@20mA(mcd) 2θ 1/2
(deg)
Min.
Typ.
Max.
Min. Typ.
590
20
1.7
----
2.6
15
28
50
475
26
----
3.5
4.2
15
28
50
White Diffused
InGaN/SiC
Blue
Note : 1.The forward voltage data did not including ± 0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 3/5
PART NO. LA62B-3/VYSBKS-10-PF
Typical Electro-Optical Characteristics Curve
VY CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
0.1
1.5
1.0
2.0
2.5
2.5
2.0
1.5
1.0
0.5
0.0
3.0
1.0
10
Fig.4 Relative Intensity vs. Temperature
Fig.3 Forward Voltage vs. Temperature
1.2
3.0
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
1000
Forward Current(mA)
Forward Voltage(V)
1.1
1.0
0.9
0.8
-40
-20
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
500
550
600
Wavelength (nm)
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
80
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
100
650
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 4/5
PART NO. LA62B-3/VYSBKS-10-PF
Typical Electro-Optical Characteristics Curve
SBK-S CHIP
Fig.2 Relative Intensity vs. Forward Current
30
1.5
Relative Intensity
Normalize @20mA
Forward Current(mA)
Fig.1 Forward current vs. Forward Voltage
25
20
15
10
5
0
1
2
3
4
1.25
1.0
0.75
0.5
0.25
0
5
0
5
Relative Intensity@20mA
Forward Current@20mA
40
30
20
10
0
50
75
Ambient Temperature( ℃)
20
25
30
Fig.4 Relative Intensity vs. Wavelength
Fig.3 Forward Current vs. Temperature
25
15
Forward Current(mA)
Forward Voltage(V)
0
10
100
1.0
0.5
0
380
430
480
530
580
Wavelength (nm)
630
680
LIGITEK ELECTRONICS CO.,LTD.
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Page 5/5
PART NO. LA62B-3/VYSBKS-10-PF
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=20mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resisance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under ondition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65℃±5℃
2.RH=90%~95%
3.t=240hrs±2hrs
The purpose of this test is the resistance
of the device under tropical for hous.
1.Ta=105℃±5℃ &-40℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260℃±5℃
2.Dwell time= 10±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230℃±5℃
2.Dwell time=5±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11