LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED ARRAY Pb Lead-Free Parts LA79B-1/G.SE.G.DBK-S2-PF DATA SHEET DOC. NO : QW0905-L A79B-1/G.SE.G.DBK-S2-PF REV. : A DATE : 04 - Aug. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA79B-1/G.SE.G.DBK-S2-PF Page 1/7 Package Dimensions 4.4 3.5± 0.5 ψ2.9X4 G 10.7 2.9 SE 20.3 G 5.08 1.5 DBK 2.5 3.5±0.5 □0.5 TYP 2.54TYP 2.8±0.5 + - 4.7±0.5 6.6± 0.5 G.SE.DBK + - LG2640/S36-PF LSE2640/S36-PF 8.5±0.5 LDBK2640 2.9 3.1 3.3 4.3 2.9 3.1 3.3 4.3 1.5 MAX 1.5 MAX □0.5 TYP 28.5MIN 29.5MIN 25.0MIN □0.5 TYP 1.0MIN 2.54TYP + 2.54TYP - Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. + - LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/7 PART NO. LA79B-1/G.SE.G.DBK-S2-PF Absolute Maximum Ratings at Ta=25 ℃ Absolute Maximum Ratings Symbol Parameter UNIT G SE DBK Forward Current IF 30 20 30 mA Peak Forward Current Duty 1/10@10KHz IFP 120 80 100 mA Power Dissipation PD 100 80 120 mW 50 μA Reverse Current @5V Ir 10 --- Electrostatic Discharge( * ) ESD Operating Temperature Topr -20 ~ +80 ℃ Storage Temperature Tstg -30 ~ +100 ℃ 150 Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic *glove is recommended when handing these LED. All devices, equipment and machinery must be properly grounded. Typical Electrical & Optical Characteristics (Ta=25 ℃) COLOR MATERIAL PART NO Emitted GaP Peak Spectral Forward voltage wave halfwidth length △λ nm @20mA(V) λPnm Lens Luminous intensity @10mA(mcd) Min. Max. Min. Viewing angle 2θ 1/2 (deg) Typ. Green Green Diffused 565 30 1.7 2.6 12 20 50 GaAsP/GaP Orange Orange Diffused 610 45 1.7 2.6 4.5 9.6 50 LA79B-1/G.SE.G.DBK-S2-PF PART NO COLOR MATERIAL Emitted LA79B-1/DBK-S2-PF InGaN/GaN Blue Dominant Wave Length λDnm Spectral halfwidth △λ nm Lens Blue Diffused 470 30 Forward voltage @20mA(V) Luminous intensity @20mA(mcd) Typ. Max. Min. Typ. 3.5 4.0 220 450 Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. Viewing angle 2θ 1/2 (deg) 38 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/7 PART NO. LA79B-1/G.SE.G.DBK-S2-PF Typical Electro-Optical Characteristics Curve G CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 5.0 1.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 650 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA79B-1/G.SE.G.DBK-S2-PF Page4/7 Typical Electro-Optical Characteristics Curve SE CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0.5 0.0 1.0 2.0 3.0 4.0 5.0 1.0 Fig.3 Forward Voltage vs. Temperature Fig.4 Relative Intensity vs. Temperature 3.0 Relative Intensity@20mA Normalize @25℃ 1.2 Forward Voltage@20mA Normalize @25℃ 1000 Forward Current(mA) Forward Voltage(V) 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 550 600 650 Wavelength (nm) 700 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA 100 10 750 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA79B-1/G.SE.G.DBK-S2-PF Page 5/7 Typical Electro-Optical Characteristics Curve DBK CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1 01 2.5 2.0 1.5 1.0 0.5 0.0 2.0 1.0 3.0 5.0 4.0 1 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 400 450 500 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 550 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA79B-1/G.SE.G.DBK-S2-PF Page 6/7 Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350°C Max Soldering Time:3 Seconds Max(One Time) Distance:2mm Min(From solder joint to case) 2.Wave Soldering Profile Dip Soldering Preheat: 120° C Max Preheat time: 60seconds Max Ramp-up 2° C/sec(max) Ramp-Down:-5°C/sec(max) Solder Bath:260° C Max Dipping Time:3 seconds Max Distance:2mm Min(From solder joint to case) Temp(° C) 260° C3sec Max 260° 5° /sec max 120° 25° 0° 0 2° /sec max Preheat 60 Seconds Max 50 100 150 Time(sec) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA79B-1/G.SE.G.DBK-S2-PF Page 7/7 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. Thermal Shock Test 1.Ta=105 ℃±5 ℃&-40 ℃±5 ℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11