LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only DUAL DIGIT LED DISPLAY (0.56 lnch) Pb Lead-Free Parts LDD511/2SBI-XX-PF DATA SHEET DOC. NO : QW0905-LDD511/2SBI-XX-PF REV. : A DATE : 23 - Feb. - 2007 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/8 PART NO. LDD511/2SBI-XX-PF Package Dimensions 25.0(0.984") DIG.1 14.2 (0.56") 8.1(0.319") DIG.2 19.0 (0.748") LDD511/2SBI-XX-PF LIGITEK ψ1.7(0.067") 4.5±0.5 Ø 0.51 TYP 2.54X8=20.32 (0.8") PIN NO.1 Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. 15.24 (0.6") LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/8 PART NO. LDD511/2SBI-XX-PF Internal Circuit Diagram LDD511SBI-XX-PF 14 13 DIG.1 DIG.2 A B C D E F G DP 16 15 3 2 1 18 17 4 A B C D E F G DP 11 10 8 6 5 12 7 9 LDD512SBI-XX-PF 14 DIG.1 A B C D E F G DP 16 15 3 2 1 18 17 4 13 DIG.2 A B C D E F G DP 11 10 8 6 5 12 7 9 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD511/2SBI-XX-PF Page 3/8 Electrical Connection PIN NO. LDD511SBI-XX-PF PIN NO. LDD512SBI-XX-PF 1 Anode E Dig.1 1 Cathode E Dig.1 2 Anode D Dig.1 2 Cathode D Dig.1 3 Anode C Dig.1 3 Cathode C Dig.1 4 Anode DP Dig.1 4 Cathode DP Dig.1 5 Anode E Dig.2 5 Cathode E Dig.2 6 Anode D Dig.2 6 Cathode D Dig.2 7 Anode G Dig.2 7 Cathode G Dig.2 8 Anode C Dig.2 8 Cathode C Dig.2 9 Anode DP Dig.2 9 Cathode DP Dig.2 10 Anode B Dig.2 10 Cathode B Dig.2 11 Anode A Dig.2 11 Cathode A Dig.2 12 Anode F Dig.2 12 Cathode F Dig.2 13 Common Cathode Dig.2 13 Common Anode Dig.2 14 Common Cathode Dig.1 14 Common Anode Dig.1 15 Anode B Dig.1 15 Cathode B Dig.1 16 Anode A Dig.1 16 Cathode A Dig.1 17 Anode G Dig.1 17 Cathode G Dig.1 18 Anode F Dig.1 18 Cathode F Dig.1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/8 PART NO. LDD511/2SBI-XX-PF Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT SBI Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 70 mA Power Dissipation Per Chip PD 120 mW Ir 50 μA Electrostatic Discharge( * ) ESD 500 V Operating Temperature Topr -20 ~ +80 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic *glove is recommended when handing these LED. All devices, equipment and machinery must be properly grounded. Part Selection And Application Information(Ratings at 25℃) common λP λD △λ cathode (nm) (nm) (nm) Material Emitted or anode Electrical CHIP PART NO Iv(mcd) Typ. Max. 3.8 4.7 IV-M Min. Typ. Common Cathode LDD511SBI-XX-PF 430 InGaN/SiC Bule LDD512SBI-XX-PF Vf(v) 465 65 Common Anode Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ± 15% testing tolerance. 4.0 6.1 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/8 PART NO. LDD511/2SBI-XX-PF Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Peak Wavelength λP nm If=20mA Dominant Wavelength λD nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD511/2SBI-XX-PF Page 6/8 Typical Electro-Optical Characteristics Curve SBI CHIP Fig.2 Relative Intensity vs. Wavelength 30 1.0 Relative Intensity(%) Forward Current(mA DC) Fig.1 Forward current vs. Forward Voltage 25 20 15 10 5 0 1 2 3 4 0.5 0 380 5 Forward Voltage(V) 100 Relative Intensity Relative Intensity(%) 580 630 680 10 75 50 25 0 5 10 15 20 25 30 35 40 45 Fig.5 Forward Current vs. Ambient Temperature 40 30 20 10 0 25 50 75 Ambient Temperature ( ℃) 1 0 0 25 50 75 Lead Temperature ( ℃) Forward Current (mA DC) Forward Current (mA DC) 530 Fig.4 Relative Intensity vs. Lead Temperature 125 0 480 Wavelength (nm) Fig.3 Relative Intensity vs. Forward Current 0 430 100 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD511/2SBI-XX-PF Page 7/8 Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350¢XC Max Soldering Time:3 Seconds Max(One time only) Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260¢XC 2.Wave Soldering Profile Dip Soldering Preheat: 120¢XC Max Preheat time: 60seconds Max Ramp-up 2¢XC/sec(max) Ramp-Down:-5¢XC/sec(max) Solder Bath:260¢XC Max Dipping Time:3 seconds Max Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260¢XC Temp(¢XC) 260¢XC3sec Max 260° 5¢X/sec max 120° 25° 0° 0 2¢X/sec max Preheat 50 100 60 Seconds Max Note: 1.Wave solder should not be made more than one time. 2.You can just only select one of the soldering conditions as above. 150 Time(sec) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LDD511/2SBI-XX-PF Page 8/8 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95 % 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. Thermal Shock Test 1.Ta=105 ℃±5 ℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11