LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only DOT MATRIX DIGIT LED DISPLAY (0.68Inch) LMD5701/2ASBKS-XX DATA SHEET DOC. NO : QW0905- LMD5701/2ASBKS-XX REV. : A DATE : 21 - Feb. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/7 PART NO. LMD5701/2ASBKS-XX Package Dimensions 12.7 (0.5") 6.1 (0.24") PIN NO.1 15.24 (0.6") 17.8 (0.7") LMD5701/2ASBKS-XX LIGITEK ψ2.0(0.079")X35 10.16 (0.4") Ø 0.51 TYP 6.9±0.5 7.62 (0.3") Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. 2.54X5= 12.7 (0.5") LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO.LMD5701/2ASBKS-XX Page 2/7 Internal Circuit Diagram LMD5701ASBKS-XX COLUMN ROW PIN 1 12 2 11 3 2 4 9 5 4 6 5 7 6 1 2 3 4 5 1 3 10 7 8 LMD5702ASBKS-XX COLUMN ROW PIN 1 12 2 11 3 2 4 9 5 4 6 5 7 6 1 2 3 4 5 1 3 10 7 8 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/7 PART NO.LMD5701/2ASBKS-XX Electrical Connection PIN NO. LMD5701ASBKS-XX PIN NO. LMD5702ASBKS-XX 1 Cathode Column 1 1 Anode Column 1 2 Anode Row 3 2 Cathode Row 3 3 Cathode Column 2 3 Anode Column 2 4 Anode Row 5 4 Cathode Row 5 5 Anode Row 6 5 Cathode Row 6 6 Anode Row 7 6 Cathode Row 7 7 Cathode Column 4 7 Anode Column 4 8 Cathode Column 5 8 Anode Column 5 9 Anode Row 4 9 Cathode Row 4 10 Cathode Column 3 10 Anode Column 3 11 Anode Row 2 11 Cathode Row 2 12 Anode Row 1 12 Cathode Row 1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/7 PART NO.LMD5701/2ASBKS-XX Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT SBKS Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 100 mA Power Dissipation Per Chip PD 120 mW Ir 50 μA ESD 500 V Reverse Current Per Any Chip Electrostatic Discharge( * ) Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic * glove is recommended when handing these LED. All devices, equipment and machinery must be properly grounded. Part Selection And Application Information(Ratings at 25℃) common cathode Material Emitted or anode CHIP PART NO △λ Vf(v) (nm) Iv(mcd) IV-M Typ. Max. Min. Typ. Common Cathode LMD5701ASBKS-XX 475 InGaN/SiC Blue LMD5702ASBKS-XX Electrical λD (nm) 26 3.5 Common Anode Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 4.2 15.25 26 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/7 PART NO.LMD5701/2ASBKS-XX Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA λD nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Dominant Wavelength Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO.LMD5701/2ASBKS-XX Page 6/7 Typical Electro-Optical Characteristics Curve SBK-S CHIP Fig.2 Relative Intensity vs. Forward Current 30 1.5 Relative Intensity Normalize @20mA Forward Current(mA) Fig.1 Forward current vs. Forward Voltage 25 20 15 10 5 0 1 2 3 4 1.25 1.0 0.75 0.5 0.25 0 5 0 5 Relative Intensity@20mA Forward Current@20mA 40 30 20 10 0 50 75 Ambient Temperature( ℃) 20 25 30 Fig.4 Relative Intensity vs. Wavelength Fig.3 Forward Current vs. Temperature 25 15 Forward Current(mA) Forward Voltage(V) 0 10 100 1.0 0.5 0 380 430 480 530 580 Wavelength (nm) 630 680 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 7/7 PART NO.LMD5701/2ASBKS-XX Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5 ℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11