LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only SINGLE DIGIT LED DISPLAY (0.32 Inch) LSD335/65-XX/RP38 DATA SHEET DOC. NO : QW0905- LSD335/65-XX/RP38 REV. : A DATE : 03 - Feb - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD335/65-XX/RP38 Page 1/7 Package Dimensions PIN NO.1 7.5 (0.295") 8.0 (0.32") 6.5 (0.256") 13.0 (0.512") LSD335/65-XX/RP38 LIGITEK 2.54X4 =10.16 (0.4") ψ1.0(0.039") 0.45 TYP. 3.8±0.5 5.08 (0.2") Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25(0.01") unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/7 PART NO. LSD335/65-XX/RP38 Internal Circuit Diagram LSD3355-XX/RP38 1,6 A B C D E 10 9 8 5 4 F 2 G DP 3 7 LSD3365-XX/RP38 1,6 A 10 9 B C D E 8 5 4 F 2 G DP 3 7 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/7 PART NO. LSD335/65-XX/RP38 Electrical Connection PIN NO. LSD3355-XX/RP38 PIN NO. LSD3365-XX/RP38 1 Common Cathode 1 Common Anode 2 Anode F 2 Cathode F 3 Anode G 3 Cathode G 4 Anode E 4 Cathode E 5 Anode D 5 Cathode D 6 Common Cathode 6 Common Anode 7 Anode DP 7 Cathode DP 8 Anode C 8 Cathode C 9 Anode B 9 Cathode B 10 Anode A 10 Cathode A LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD335/65-XX/RP38 Page 4/7 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT SR Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 100 mA Power Dissipation Per Chip PD 100 mW Ir 10 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1-16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode Material Emitted or anode CHIP PART NO △λ Vf(v) (nm) Iv(mcd) Min. Typ. Max. Min. Typ. 1.5 1.7 5.5 IV-M Common Cathode LSD3355-XX/RP38 GaAlAs LSD3365-XX/RP38 Electrical λP (nm) 660 Red 20 Common Anode Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 2.4 3.05 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/7 PART NO. LSD335/65-XX/RP38 Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Peak Wavelength λP nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 6/7 PART NO. LSD335/65-XX/RP38 Typical Electro-Optical Characteristics Curve SR CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 1.0 5.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 600 650 700 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature(℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25 ℃ Forward Voltage@20mA Normalize @25 ℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 750 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD335/65-XX/RP38 Page 7/7 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of hogh temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5 ℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11