LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only SINGLE DIGIT LED DISPLAY (0.31 Inch) LSD3C5/65/R1/XX/KP4 DATA SHEET DOC. NO : QW0905- LSD3C5/65/R1-XX/KP4 REV. : A DATE : 06 - Jan - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD3C5/65/R1-XX/KP4 Page 1/7 Package Dimensions LSD3C5/65/R1-XX/KP4 5.0(0.197") LIGITEK 7.0(0.276") □0.5 TYP PIN NO.1 8.0 (0.31") 11.0 (0.433") 2.0X4=8.0 (0.315") ψ0.9(0.035") 4.0±0.5 □0.3 TYP 5.3(0.209") Note : 1.All dimension are in millimeters and (lnch) tolerance is ± 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD3C5/65/R1-XX/KP4 Page 2/7 Internal Circuit Diagram LSD3C55/R1-XX 9 A B 1 10 C D E F 8 4 2 5 G 3 6 DP 7 LSD3C65/R1-XX 9 A B 1 10 C D E F 8 4 2 5 G 3 6 DP 7 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD3C5/65/R1-XX/KP4 Page 3/7 Electrical Connection LSD3C55/R1-XX PIN NO.1 PIN NO.1 LSD3C65/R1-XX 1 Anode A 1 Cathode A 2 Anode F 2 Cathode F 3 Anode G 3 Cathode G 4 Anode E 4 Cathode E 5 Anode D 5 Cathode D 6 Cathode DP 6 Anode 7 Anode DP 7 Cathode DP 8 Anode C 8 Cathode 9 Common Cathode 9 Common Anode 10 Anode B 10 Cathode DP C B LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD3C5/65/R1-XX/KP4 Page 4/7 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT SR Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 100 mA Power Dissipation Per Chip PD 100 mW Ir 10 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1-16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode or anode Material Emitted CHIP PART NO △λ Vf(v) (nm) Iv(mcd) Min. Typ. Max. Min. Typ. 1.5 1.7 2.4 5.0 IV-M Common Cathode LSD3C55/R1-XX/KP4 GaAlAs LSD3C65/R1-XX/KP4 Electrical λP (nm) 660 Red 20 Common Anode Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ± 15% testing tolerance. 3.05 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD3C5/65R/R1-XX/KP4 Page 5/7 Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Peak Emission Wavelength λP nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 6/7 PART NO. LSD3C5/65/R1-XX/KP4 Typical Electro-Optical Characteristics Current SR CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 1.0 5.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 600 650 700 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature(℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25 ℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 750 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD3C5/65/R1-XX/KP4 Page 7/7 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of hogh temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11