LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only SINGLE DIGIT LED DISPLAY (0.5lnch) LSD505/61-XX/RP3 DATA SHEET DOC. NO : QW0905- LSD505/61-XX/RP3 REV. : B DATE : 24 - Jan - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD505/61-XX/RP3 Page 1/7 Package Dimensions 12.7 (0.5") 12.7 (0.50") 8.0 (0.315") 19.0 (0.748") ψ1.5(0.059") LSD505/61-XX/RP3 LIGITEK □0.51 TYP 3.0±0.5 2.45X4=9.8 (0.386") PIN NO.1 Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. 15.24 (0.60") LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD505/61-XX/RP3 Page 2/7 Internal Circuit Diagram LSD5051-XX/RP3 3,8 A 7 B C D E 6 4 2 1 F G DP 9 10 5 LSD5061-XX/RP3 3,8 A 7 B C D E 6 4 2 1 F G DP 9 10 5 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD505/61-XX/RP3 Page 3/7 Electrical Connection PIN NO. LSD5051-XX/PR3 PIN NO. LSD5061-XX/PR3 1 Anode E 1 Cathode E 2 Anode D 2 Cathode D 3 Common Cathode 3 Common Anode 4 Anode C 4 Cathode C 5 Anode DP 5 Cathode DP 6 Anode B 6 Cathode B 7 Anode A 7 Cathode A 8 Common Cathode 8 Common Anode 9 Anode F 9 Cathode F 10 Anode G 10 Cathode G LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/7 PART NO. LSD505/61-XX/RP3 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT H Forward Current Per Chip IF 15 mA Peak Forward Current Per Chip (Duty 1/10,0.1M=ms Pulse Width) IFP 60 mA Power Dissipation Per Chip PD 40 mW Ir 10 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1-16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode or anode Material Emitted CHIP PART NO Electrical λp (nm) △λ Vf(v) (nm) Min. Iv(mcd) Typ. Max. Min. IV-M Typ. LSD5051-XX/RP3 GaP Red Common Cathode 697 90 1.7 2.1 2.6 0.35 0.5 2:1 LSD5061-XX/RP3 GaP Red Common Anode 697 90 1.7 2.1 2.6 0.35 0.5 2:1 Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/7 PART NO. LSD505/61-XX/RP3 Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Peak Wavelength λp nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 6/7 PART NO. LSD505/61-XX/RP3 Typical Electro-Optical Characteristics Curve H CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0.5 0.0 1.0 4.0 3.0 2.0 5.0 1.0 10 Fig.4 Relative Intensity vs. Temperature 1.2 Relative Intensity@20mA Normalize @25 ℃ Forward Voltage@20mA Normalize @25 ℃ Fig.3 Forward Voltage vs. Temperature 1.1 1.0 0.9 0.8 -20 0 20 40 60 1000 Forward Current(mA) Forward Voltage(V) -40 100 80 100 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature(℃) Relative Intensity@20mA Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 600 700 800 900 Wavelength (nm) 1000 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 7/7 PART NO. LSD505/61-XX/RP3 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of hogh temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11