LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only BIPOLAR TYPE LED LAMPS Pb Lead-Free Parts LSEG65062/S8-PF DATA SHEET DOC. NO : QW0905- LSEG65062/S8-PF REV. : B DATE : 29 - Aug. - 2009 發行 立碁電子 DCC LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/7 PART NO. LSEG65062/S8-PF Package Dimensions 2.7 1.5 R1.38 4.0 1.0MAX 0.40TYP 0.45MAX 25.0min G 0.35TYP SE 1.0MIN 2.0TYP 1 2 Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. Directivity Radiation 1 2 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/7 PART NO. LSEG65062/S8-PF Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT SE G Forward Current IF 20 30 mA Peak Forward Current Duty 1/10@10KHz IFP 80 120 mA Power Dissipation PD 80 100 mW Reverse Current @5V Ir 10 μA Operating Temperature Topr -40 ~ +85 ℃ Storage Temperature Tstg -40 ~ +100 ℃ Typical Electrical & Optical Characteristics (Ta=25 ℃) PART NO COLOR MATERIAL Emitted Lens GaAsP/GaP Orange Dominant wave length λDnm Forward Spectral voltage halfwidth @20mA(V) △λnm Min. Typ. Max. Luminous intensity @ 10mA(mcd) Viewing angle 2θ 1/2 (deg) Min. Max. Min. Max. ---- 610 ---- 45 1.7 2.6 1.2 20 174 564 ---- 574 30 1.7 2.6 3.0 45 174 White Diffused LSEG65062/S8-PF GaP Green Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/7 PART NO. LSEG65062/S8-PF Brightness Code For Standard LED Lamps SE CHIP Group G Luminous Intensity(mcd) at 10 mA Min. Max. A5 1.2 1.8 A6 1.8 3 A7 3 4.5 A8 4.5 8 A9 8 12 A10 12 20 CHIP Group Luminous Intensity(mcd) at 10 mA Min. Max. A7 3 4.5 A8 4.5 8 A9 8 12 A10 12 20 A11 20 30 A12 30 45 Color Code G CHIP Group Dominant Wave length(nm) at 10 mA Min. Max. 5 564 566 6 566 568 7 568 570 8 570 572 9 572 574 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page4/7 PART NO. LSEG65062/S8-PF Typical Electro-Optical Characteristics Curve SE CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0.5 0.0 1.0 2.0 3.0 4.0 5.0 1.0 Fig.3 Forward Voltage vs. Temperature Fig.4 Relative Intensity vs. Temperature 3.0 Relative Intensity@20mA Normalize @25℃ 1.2 Forward Voltage@20mA Normalize @25℃ 1000 Forward Current(mA) Forward Voltage(V) 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 550 600 650 Wavelength (nm) 700 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA 100 10 750 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/7 PART NO. LSEG65062/S8-PF Typical Electro-Optical Characteristics Curve G CHIP Fig.2 Relative Intensity vs. Forward Current Fig.1 Forward current vs. Forward Voltage 3.5 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 5.0 1.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 650 Fig.6 Directive Radiation 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 6/7 PART NO. LSEG65062/S8-PF Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350°C Max Soldering Time:3 Seconds Max(One time only) Distance:2mm Min(From solder joint to body) 2.Wave Soldering Profile Dip Soldering Preheat: 120°C Max Preheat time: 60seconds Max Ramp-up 2° C/sec(max) Ramp-Down:-5°C/sec(max) Solder Bath:260° C Max Dipping Time:3 seconds Max Distance:2mm Min(From solder joint to body) Temp(° C) 260° C3sec Max 260° 5° /sec max 120° 25° 0° 0 2° /sec max Preheat 50 100 60 Seconds Max Note: 1.Wave solder should not be made more than one time. 2.You can just only select one of the soldering conditions as above. 150 Time(sec) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 7/7 PART NO. LSEG65062/S8-PF Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11