LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only BIPOLAR ROUND TYPE LED LAMPS Pb Lead-Free Parts LURHSGM3363/R1 DATA SHEET DOC. NO : QW0905- LURHSGM3363/R1 REV. : A DATE : 08 - Jun. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/6 PART NO. LURHSGM3363/R1 Package Dimensions 5.0 5.9 7.6 8.6 1.5 MAX □0.5 TYP SGM 25.0MIN 1 URH 2 1.0MIN 1 2 2.54TYP Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. Directivity Radiation 0° -30° 30° -60 ° 100% 75% 50% 60° 25% 0 25% 50% 75% 100% LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LURHSGM3363/R1 Page 2/6 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT URH SGM Forward Current IF 50 30 mA Peak Forward Current Duty 1/10@10KHz IFP 100 100 mA Power Dissipation PD 130 100 mW Ir 10 50 μA Electrostatic Discharge( * ) ESD 2000 1000 V Operating Temperature Topr -20~ +80 ℃ Storage Temperature Tstg -30 ~ +100 ℃ Reverse Current @5V Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic * glove is recommended when handing these LED. All devices, equipment and machinery must be properly grounded. Typical Electrical & Optical Characteristics (Ta=25 ℃) PART NO COLOR MATERIAL Emitted Peak Dominant Spectral wave halfwidth wave length length △λnm λDnm λDnm Luminous intensity Viewing angle @20mA(mcd) 2θ 1/2 (deg) Min. Typ. Max. Min. Typ. Lens AlGaInP/GaP Red Forward voltage @20mA(V) --- 630 20 1.7 --- 2.6 1100 1800 20 518 525 35 --- 20 Water Clear LURHSGM3363/R1 InGaN/SiC Green Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ± 15% testing tolerance. 3.5 4.2 700 1100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LURHSGM3363/R1 Page 3/6 Typical Electro-Optical Characteristics Curve UR(H) CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1 01 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1.0 1.5 2.0 2.5 3.0 1 10 Fig.3 Forward Voltage vs. Temperature Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ 1.2 1.1 1.0 0.9 0.8 -20 0 20 40 60 80 100 Relative Intensity@20mA Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 600 650 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature( ℃) 550 1000 Forward Current(mA) Forward Voltage(V) -40 100 700 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/6 PART NO. LURHSGM3363/R1 Typical Electro-Optical Characteristics Curve SGM CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Forward Current vs. Relative Intensity 2.5 Forward Current(mA) Forward Current(mA) 30 20 10 2.0 1.5 1.0 0.5 0.0 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 10 60 50 40 30 20 10 0 40 60 80 100 Relative Intensity@20mA Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 500 550 Wavelength (nm) 50 2.0 1.5 1.0 0.5 0.0 20 30 40 50 Ambient Temperature( ℃) Ambient Temperature( ℃) 0.0 450 40 Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25℃ Forward Current@20mA Fig.3 Forward Current vs. Temperature 20 30 Relative Intensity Normalize @20mA Forward Voltage(V) 0 20 600 60 70 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/6 PART NO. LURHSGM3363/R1 Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350° C Max Soldering Time:3 Seconds Max(One Time) Distance:2mm Min(From solder joint to body) 2.Wave Soldering Profile Dip Soldering Preheat: 120°C Max Preheat time: 60seconds Max Ramp-up 2° C/sec(max) Ramp-Down:-5° C/sec(max) Solder Bath:260°C Max Dipping Time:3 seconds Max Distance:2mm Min(From solder joint to body) Temp(° C) 260° C3sec Max 260° 5° /sec max 120° 25° 0° 0 2° /sec max Preheat 60 Seconds Max 50 100 150 Time(sec) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 6/6 PART NO. LURHSGM3363/R1 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5 ℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11