LRC LBCW68GLT1G

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
We declare that the material of product compliance with RoHS requirements.
LBCW68GLT1G
ORDERING INFORMATION
Device
3
Marking
Shipping
LBCW68GLT1G
DG
3000/Tape&Reel
LBCW68GLT3G
DG
10000/Tape&Reel
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CEO
– 45
Vdc
Vdc
Collector–Emitter Voltage
V
Collector–Base Voltage
V
CBO
– 60
Emitter–Base Voltage
V
EBO
– 5.0
Vdc
– 800
mAdc
Collector Current — Continuous
IC
3
COLLECTOR
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
RθJA
556
°C/W
PD
300
mW
2.4
mW/°C
417
–55 to +150
°C/W
°C
RθJA
TJ , Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0 )
V (BR)CEO
– 45
—
—
Vdc
Collector–Emitter Breakdown Voltage (IC = –10 µAdc, VEB = 0 )
V (BR)CES
– 60
—
—
Vdc
Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0)
V
– 5.0
—
—
Vdc
Collector Cutoff Current
(BR)EBO
I CES
(VCE = –45 Vdc, I E= 0 )
—
—
– 20
nAdc
(VCE = –45 Vdc, I B= 0 , TA = 150°C)
—
—
– 10
µAdc
—
—
– 20
nAdc
Emitter Cutoff Current (VEB = – 4.0 Vdc, I C = 0)
I EBO
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1/3
LESHAN RADIO COMPANY, LTD.
LBCW68GLT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
120
160
60
—
—
—
400
—
—
V CE(sat)
—
—
– 1.5
Vdc
V BE(sat)
—
—
– 2.0
Vdc
100
—
—
MHz
—
—
18
pF
—
—
105
pF
—
—
10
dB
ON CHARACTERISTICS
DC Current Gain
( IC= –10 mAdc, VCE = –1.0 Vdc )
( IC= –100 mAdc, VCE = –1.0 Vdc )
( IC= –300 mAdc, VCE = –1.0 Vdc )
Collector–Emitter Saturation Voltage
( IC = – 300 mAdc, IB = –30 mAdc )
Base–Emitter Saturation Voltage
( IC = – 500 mAdc, IB = –50 mAdc )
hFE
—
SMSMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
fT
(I C = –20mAdc, V CE = –10 Vdc, f = 100 MHz)
Output Capacitance
C obo
(V CB = – 10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
C ibo
(V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz)
Noise Figure
NF
(V CE = – 5.0 Vdc, I C = – 0.2 mAdc, R S = 1.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
2/3
LESHAN RADIO COMPANY, LTD.
LBCW68GLT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
DIM
B S
G
C
D
H
K
J
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
A
B
C
D
G
H
J
K
L
S
V
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
3/3