40HF/40HFR NAINA SILICON POWER DIODES DO-5 FEATURES • All Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic * Available in metric and UNF thread ELECTRICAL SPECIFICATIONS Maximum Average Forward Current Te=1400C Maximum peak forward VFM voltage drop @ Rated IF(AV) Maximum peak one cycle IFRM (non-rep) surge current 10 m sec Maximum peak repetitive IFRM surge current I2tMaximum I2t rating (non-rep.) for 5 to 10 m sec 40 HF/ HFR 7 POLARITY A C C Ø 4.0 12 A Normal Reverse 17 A/F M8 x 1.25 IF(AV) 27 11.5 16 40A Ø 8.0 1.2V POLARITY A C 500 A C A Normal Reverse 200 A 1200A2 Sec 12 17 A/F 32 11.5 M 8 x 1.25 THERMAL MECHANICAL SPECIFICATIONS θJC Tj Tstg W Maximum thermal resistance Junction to case Operating Junction Temp. Storage temperature Mounting torque (Non-lubricated threads) Approx, weight 10C/W -650C to 1500C -650C to 2000C 0.4 M-kg min, 0.6 M-kg max 13.5 & 30 gms. ELECTRICAL RATINGS TYPE 40HF/HFR 10 20 40 60 80 100 120 140 160 VRRM Max. repetitive peak reverse 100 200 400 600 800 1000 1200 1400 1600 voltage (v) VR(RMS) Max. R.M.S. reverse voltage (V) 70 140 280 420 560 700 840 980 VR Max. D.C. Blocking Voltage (V) 100 200 400 600 800 1000 1200 1400 1600 40 80 160 240 320 400 480 560 640 200 200 200 200 200 200 200 200 200 IR(AV) Recommended R.M.S. working Voltage(v) Max. Average reverse leakage current @ VRMM Tc 250C uA NAINA SEMICONDUCTOR LTD D95,SECTOR 63,NOIDA(INDIA) e-mail: [email protected], web site :www.nainasemi.com 1120