NCE11N65,NCE11N65F Pb-Free Product NCE N-Channel Enhancement Mode Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) 380 mΩ gate charge. This super junction MOSFET fits the industry’s ID 11 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） Schematic diagram Package Marking And Ordering Information Device Device Package NCE11N65 TO-220 NCE11N65F TO-220F Marking NCE11N65 TO-220 Absolute Maximum Ratings (TC=25℃) Parameter Symbol Drain-Source Voltage (VGS=0V） VDS Gate-Source Voltage (VDS=0V) VGS Continuous Drain Current at Tc=25°C ID (DC) Continuous Drain Current at Tc=100°C ID (DC) (Note 1) IDM (pluse) Pulsed drain current TO-220F Table 1. Drain Source voltage slope, VDS = 480 V, ID = 11 A, Tj = 125 °C Derate above 25°C (Note2) Single pulse avalanche energy (Note 1) Avalanche current Wuxi NCE Power Semiconductor Co., Ltd Page 1 NCE11N65F Unit 650 V ±30 V 11 11* A 7 7* A 33 33* A dv/dt PD Maximum Power Dissipation(Tc=25℃) NCE11N65 V/ns 50 125 33 W 1 0.26 W/°C EAS 340 mJ IAR 11 A v1.0 NCE11N65,NCE11N65F Pb-Free Product Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) Operating Junction and Storage Temperature Range EAR 0.6 mJ TJ,TSTG -55...+150 °C * limited by maximum junction temperature Table 2. Thermal Characteristic Parameter Symbol NCE11N65 NCE11N65F Unit Thermal Resistance，Junction-to-Case（Maximum） RthJC 1 3.8 °C /W Thermal Resistance，Junction-to-Ambient （Maximum） RthJA 62 80 °C /W Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit On/off states Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 650 Zero Gate Voltage Drain Current(Tc=25℃) IDSS VDS=650V,VGS=0V 1 μA Zero Gate Voltage Drain Current(Tc=125℃) IDSS VDS=650V,VGS=0V 100 μA Gate-Body Leakage Current IGSS VGS=±30V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 3 3.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=5.5A 340 380 mΩ Forward Transconductance gFS VDS = 20V, ID = 5A 8.5 S Input Capacitance Clss 1350 PF Output Capacitance Coss 55 PF Reverse Transfer Capacitance Crss 4.5 PF Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 2.5 V Dynamic Characteristics VDS=100V,VGS=0V, F=1.0MHz VDS=480V,ID=11A, VGS=10V 43 60 nC 5.5 nC 22 nC 10 nS nS Switching times Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=380V,ID=11A, 5 td(off) RG=6.8Ω,VGS=10V 44 70 nS 5 9 nS 20 A 60 A 1.3 V Turn-Off Delay Time Turn-Off Fall Time tf Source- Drain Diode Characteristics Source-drain current(Body Diode) ISD Pulsed Source-drain current(Body Diode) ISDM Forward on voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr TC=25°C Tj=25°C,ISD=11A,VGS=0V Tj=25°C,IF=11A,di/dt=100A/μs 1 400 nS 6 nC Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω Wuxi NCE Power Semiconductor Co., Ltd Page 2 v1.0 NCE11N65,NCE11N65F Pb-Free Product TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves) Figure1. Safe operating area for NCE11N65 Figure3. Source-Drain Diode Forward Voltage Figure5. Transfer characteristics Wuxi NCE Power Semiconductor Co., Ltd Figure2. Safe operating area for NCE11N65F Figure4. Output characteristics Figure6. Static drain-source on resistance Page 3 v1.0 NCE11N65,NCE11N65F Pb-Free Product Figure7. RDS(ON) vs Junction Temperature Figure8. BVDSS vs Junction Temperature Figure9. Maximum ID vs Junction Temperature Figure10. Capacitance Wuxi NCE Power Semiconductor Co., Ltd Figure10. Gate charge waveforms Figure11. Transient Thermal Impedance for NCE11N65 Page 4 v1.0 NCE11N65,NCE11N65F Pb-Free Product Figure11. Transient Thermal Impedance for NCE11N65F Wuxi NCE Power Semiconductor Co., Ltd Page 5 v1.0 NCE11N65,NCE11N65F Pb-Free Product Test circuit 1）Gate charge test circuit & Waveform 2）Switch Time Test Circuit： 3）Unclamped Inductive Switching Test Circuit & Waveforms Wuxi NCE Power Semiconductor Co., Ltd Page 6 v1.0 NCE11N65,NCE11N65F Pb-Free Product TO-220-3L Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 4.470 4.670 0.176 0.184 A1 2.520 2.820 0.099 0.111 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.330 0.650 0.013 0.026 c1 1.200 1.400 0.047 0.055 D 10.010 10.350 0.394 0.407 E 8.500 8.900 0.335 0.350 E1 12.060 12.460 0.475 0.491 e 2.540 TYP. 0.100 TYP. e1 4.980 5.180 0.196 0.204 F 2.590 2.890 0.102 0.114 H 8.440 REF. 0.332 REF. h 0.000 0.300 0.000 0.012 L 13.400 13.800 0.528 0.543 L1 3.560 3.960 0.140 0.156 V 6.060 REF. 0.239 REF. I 6.600 REF. 0.260 REF. Φ 3.735 Wuxi NCE Power Semiconductor Co., Ltd 3.935 Page 7 0.147 0.155 v1.0 NCE11N65,NCE11N65F Pb-Free Product TO-220F Package Information Symbol A Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. 4.300 4.700 0.169 0.185 A1 1.300REF 0.051REF A2 2.800 3.200 0.110 0.126 A3 2.500 2.900 0.098 0.114 b 0.500 0.750 0.020 0.030 b1 1.100 1.350 0.043 0.053 b2 1.500 1.750 0.059 0.069 c 0.500 0.750 0.020 0.030 D 9.960 10.360 0.392 0.408 E 14.800 15.200 0.583 0.598 e 2.540TYP. 0.100TYP F 2.700REF 0.106REF Φ 3.500REF 0.138REF h1 0.800REF 0.031REF h2 0.500REF 0.020REF L 28.000 28.400 1.102 1.118 L1 1.700 1.900 0.067 0.075 L2 1.900 2.100 0.075 0.083 Wuxi NCE Power Semiconductor Co., Ltd Page 8 v1.0 NCE11N65,NCE11N65F Pb-Free Product ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all NCE products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE representative nearest you before using any NCE products described or contained herein in such applications. NCE assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE products described or contained herein. Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. NCE Power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all NCE products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE Power Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE product that you intend to use. This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without notice. 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