NCE7560K http://www.ncepower.com Pb-Free Product NCE N-Channel Enhancement Mode Power MOSFET General Description Product Summary The NCE7560K uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate RDS(ON) typ. 6.8 mΩ max. 8.0 mΩ 60 A charge. It can be used in a wide variety of applications. ID Features ● VDS=75V；ID=60A@ VGS=10V； RDS(ON)<8mΩ @ VGS=10V 100% UIS TESTED! ● Special process technology for high ESD capability ● Special designed for Convertors and power controls ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply TO-252-2L top view Schematic diagram Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE7560K NCE7560K TO-252-2L - - - Table 1. Absolute Maximum Ratings (TA=25℃) Parameter Symbol Value Unit Drain-Source Voltage (VGS=0V） VDS 75 V Gate-Source Voltage (VDS=0V) VGS ±25 V Drain Current (DC) at Tc=25℃ ID (DC) 60 A ID (DC) 48 A IDM (pluse) 310 A dv/dt 30 V/ns PD 140 W 0.95 W/℃ EAS 300 mJ TJ,TSTG -55 To 175 ℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) Peak diode recovery voltage Maximum Power Dissipation(Tc=25℃) Derating factor Single pulse avalanche energy (Note 2) Operating Junction and Storage Temperature Range Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2.EAS condition：Tj=25℃,VDD=50V,VG=10V,L=0.5mH Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 NCE7560K http://www.ncepower.com Table 2. Pb-Free Product Thermal Characteristic Parameter Symbol Value Unit Thermal Resistance，Junction-to-Case（Maximum） RthJC 1.05 ℃/W Thermal Resistance，Junction-to-Ambient （Maximum） RthJA 50 ℃/W Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit On/off states Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 75 Zero Gate Voltage Drain Current(Tc=25℃) IDSS VDS=75V,VGS=0V 1 μA Zero Gate Voltage Drain Current(Tc=125℃) IDSS VDS=75V,VGS=0V 10 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 3 4 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=30A 6.8 8 mΩ Forward Transconductance gFS VDS=5V,ID=30A 60 S Input Capacitance Clss 3100 PF Output Capacitance Coss 310 PF Reverse Transfer Capacitance Crss 260 PF Total Gate Charge Qg 100 nC Gate-Source Charge Qgs 18 nC Gate-Drain Charge Qgd 27 nC 18.2 nS 2 V Dynamic Characteristics VDS=25V,VGS=0V, F=1.0MHz VDS=30V,ID=30A, VGS=10V Switching times Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=30V,ID=2A,RL=15Ω 15.6 nS td(off) VGS=10V,RG=2.5Ω 70.5 nS 13.8 nS Turn-Off Delay Time Turn-Off Fall Time tf Source- Drain Diode Characteristics Source-drain current(Body Diode) ISD 80 A Pulsed Source-drain current(Body Diode) ISDM 320 A 1.2 V 53 nS 105 nC (Note 1) Tj=25℃,ISD=30A,VGS=0V VSD Forward on voltage (Note 1) Reverse Recovery Time (Note 1) trr Reverse Recovery Charge Qrr Forward Turn-on Time ton Tj=25℃,IF=75A,di/dt=100A/μs Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD) Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting Tj=25℃ Wuxi NCE Power Semiconductor Co., Ltd Page 2 v1.0 NCE7560K http://www.ncepower.com Pb-Free Product Test circuit 1）EAS test circuits 2）Gate charge test circuit: 3）Switch Time Test Circuit： Wuxi NCE Power Semiconductor Co., Ltd Page 3 v1.0 NCE7560K http://www.ncepower.com Pb-Free Product TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves) Figure1. Safe operating area Figure2. Source-Drain Diode Forward Voltage Figure3. Output characteristics Figure4. Transfer characteristics Figure5. Static drain-source on resistance Wuxi NCE Power Semiconductor Co., Ltd Page 4 Figure6. RDS(ON) vs Junction Temperature v1.0 NCE7560K http://www.ncepower.com Pb-Free Product Figure7. BVDSS vs Junction Temperature Figure8. VGS(th) vs Junction Temperature Figure9. Gate charge waveforms Figure10. Capacitance Figure11. Normalized Maximum Transient Thermal Impedance Wuxi NCE Power Semiconductor Co., Ltd Page 5 v1.0 NCE7560K http://www.ncepower.com Pb-Free Product TO-252-2L Package Information Wuxi NCE Power Semiconductor Co., Ltd Page 6 v1.0 NCE7560K http://www.ncepower.com Pb-Free Product ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all NCE products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE representative nearest you before using any NCE products described or contained herein in such applications. NCE assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE products described or contained herein. Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. NCE Power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all NCE products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE Power Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE product that you intend to use. This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without notice. 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