DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG240033 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.75 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 23.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz • OIP3 = 35.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz • Maximum stable power gain: MSG =13.0 dB TYP. @ VCE = 5 V, IC = 40 mA, f = 1 GHz • SiGe HBT technology (UHS2) : fT = 10.5 GHz • This product is improvement of ESD of NESG2xxx series. • 3-pin minimold (33 PKG) ORDERING INFORMATION Part Number NESG240033 Order Number Package NESG240033-A NESG240033-T1B Quantity Supplying Form 3-pin minimold 50 pcs • 8 mm wide embossed taping (33 PKG) (Pb-Free) (Non reel) • Pin 3 (Collector) face the perforation side NESG240033-T1B-A 3 kpcs/reel of the tape Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 5.5 V Collector to Emitter Voltage VCES 13 V Collector to Emitter Voltage VCEO 5.5 V Note 1 IB 36 mA Collector Current IC 400 mA 480 mW Base Current <R> Total Power Dissipation Ptot Note 2 Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Notes 1. Depend on the ESD protect device. 2. Mounted on 3.8 cm × 9.0 cm ×0.8 mm (t) glass epoxy PWB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PU10768EJ02V0DS (2nd edition) Date Published November 2009 NS Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2009 NESG240033 THERMAL RESISTANCE (TA = +25°C) Parameter <R> Termal Resistance from Junction to Note Ambient Symbol Ratings Unit Rthj-a 260 °C/W Note Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB RECOMMENDED OPERATING RANGE (TA = +25°C) Parameter <R> Collector Current Symbol MIN. TYP. MAX. Unit IC − 40 − mA ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 100 nA Emitter Cut-off Current IEBO VEB = 0.4 V, IC = 0 mA − − 100 nA VCE = 5 V, IC = 15 mA 140 180 260 − VCE = 5 V, IC = 40 mA, f = 1 GHz − 10.5 − GHz ⏐S21e⏐ VCE = 5 V, IC = 40 mA, f = 1 GHz 9.5 11.5 − dB Noise Figure (1) NF1 VCE = 5 V, IC = 15 mA, f = 1 GHz, ZS = ZSopt, ZL = 50Ω − 0.75 1.15 dB Noise Figure (2) NF2 VCE = 5 V, IC = 40 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt − 0.8 − dB Associated Gain (1) Ga1 VCE = 5 V, IC = 15 mA, f = 1 GHz, ZS = ZSopt, ZL = 50Ω 9.0 11.0 − dB Associated Gain (2) Ga2 VCE = 5 V, IC = 40 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt − 12.0 − dB VCB = 5 V, IE = 0 mA, f = 1 MHz − 0.9 1.1 pF VCE = 5 V, IC = 40 mA, f = 1 GHz 11.0 13.0 − dB VCE = 5 V, IC (set) = 40 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt − 23.5 − dBm VCE = 5 V, IC (set) = 40 mA, f = 1 GHz, − 35.5 − dBm DC Current Gain hFE Note 1 RF Characteristics Gain Bandwidth Product fT 2 Insertion Power Gain Reverse Transfer Capacitance Maximum Stable Power Gain Cre Note 2 MSG Note 3 Gain 1 dB Compression Output Power PO (1 dB) Output 3rd Order Intercept Point OIP3 Δf = 1 MHz, ZS = ZSopt, ZL = ZLopt Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded. 3. MSG = S21 S12 hFE CLASSIFICATION 2 Rank FB Marking R7A hFE Value 140 to 260 Data Sheet PU10768EJ02V0DS NESG240033 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Total Power Dissipation Ptot (mW) 1 000 Reverse Transfer Capacitance Cre (pF) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 3.8 cm × 9.0 cm × 0.8mm (t), FR–4 500 480 0 0 25 50 75 100 125 150 1.4 f = 1 MHz 1.3 1.2 1.1 1.0 0.9 0.8 0 2 3 4 5 Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 3 V VCE = 5 V 10 Collector Current IC (mA) Collector Current IC (mA) 1 Ambient Temperature TA (°C) 100 1 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 10 1 0.1 0.01 0.001 0.0001 0.4 Base to Emitter Voltage VBE (V) 0.5 0.6 0.7 0.8 0.9 Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 250 1700 μ A Collector Current IC (mA) <R> 1 500 μA 200 1 300 μ A 1 100 μA 150 900 μA 700 μA 100 500 μA 300 μA 50 IB = 100 μA 0 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Remark The graphs indicate nominal characteristics. Data Sheet PU10768EJ02V0DS 3 NESG240033 DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 1 000 VCE = 5 V DC Current Gain hFE DC Current Gain hFE VCE = 3 V 100 10 1 0.1 1 10 100 10 100 Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 1 000 20 VCE = 3 V, f = 1 GHz 15 10 5 10 100 VCE = 5 V, f = 1 GHz 15 10 5 0 1 Collector Current IC (mA) 10 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. 4 1 Collector Current IC (mA) Gain Bandwidth Product fT (GHz) Gain Bandwidth Product fT (GHz) 10 1 0.1 1 000 20 0 1 100 Data Sheet PU10768EJ02V0DS 100 NESG240033 35 VCE = 3 V, IC = 10 mA 30 25 MSG 20 MAG MAG 15 2 |S21e| MSG 10 5 0 0.1 1 10 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 35 VCE = 3 V, IC = 40 mA 30 25 MSG MAG 20 15 MAG |S21e|2 MSG 10 5 0 0.1 10 1 Frequency f (GHz) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 35 VCE = 5 V, IC = 10 mA 30 25 MSG 20 MAG MAG 15 MSG |S21e|2 10 5 0 0.1 1 10 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Frequency f (GHz) 35 VCE = 5 V, IC = 40 mA 30 25 MSG MAG 20 MAG 15 |S21e|2 MSG 10 5 0 0.1 1 10 Frequency f (GHz) Frequency f (GHz) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 VCE = 3 V, f = 1 GHz MSG MAG 15 10 |S21e|2 5 0 1 10 100 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 20 VCE = 5 V, f = 1 GHz MSG MAG 15 10 |S21e|2 5 0 1 Collector Current IC (mA) 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. Data Sheet PU10768EJ02V0DS 5 NESG240033 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 3 14 Ga 12 10 2 8 6 1 4 NF 2 0 1 40 VCE = 5 V, f1 = 1.000 GHz, f2 = 1.001 GHz 30 20 10 0 1 10 100 Collector Current IC (mA) OUTPUT POWER, LINEAR GAIN, COLLECTOR CURRENT vs. INPUT POWER EACH OUTPUT POWER, IM3 vs. EACH INPUT POWER 400 Pout 20 300 GL 10 200 IC 0 –10 –20 100 –10 0 10 0 30 20 Collector Current IC (mA) 30 500 VCE = 5 V, IC (set) = 40 mA , f = 1 GHz Each Output Power Pout (each) (dBm) 3rd Order Intermodulation Distortion IM3 (dB) Collector Current IC (mA) 40 Output Power Pout (dBm) Linear Gain GL (dB) 0 100 10 Output 3rd Order Intercept Point OIP3 (dBm) 16 VCE = 5 V, f = 1 GHz, ZS = ZSopt, ZL = 50 Ω Associated Gain Ga (dB) Noise Figure NF (dB) 4 OUTPUT 3RD ORDER INTERCEPT POINT vs. COLLECTOR CURRENT 40 30 20 10 0 Pout –10 –20 –30 –40 –50 –60 –70 –80 –20 Input Power Pin (dBm) IM3 –10 VCE = 5 V, IC (set) = 40 mA , f1 = 1.000 GHz, f2 = 1.001 GHz 0 10 20 30 Each Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. S-PARAMETERS S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.necel.com/microwave/en/ 6 Data Sheet PU10768EJ02V0DS NESG240033 PACKAGE DIMENSIONS 3-PIN MINIMOLD (33 PKG) (UNIT: mm) 0.65+0.1 –0.15 1 3 0.4+0.1 –0.05 0.95 2 0.95 1.5 R7A Marking 0 to 0.1 1.1 to 1.4 0.16+0.1 –0.05 0.3 2.9±0.2 0.4+0.1 –0.05 2.8±0.2 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector Data Sheet PU10768EJ02V0DS 7 NESG240033 • The information in this document is current as of November, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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