DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG240034 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 15 mA, f = 1 GHz • PO (1 dB) = 24 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz • OIP3 = 35.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz • Maximum stable power gain: MSG =11.5 dB TYP. @ VCE = 5 V, IC = 40 mA, f = 1 GHz • SiGe HBT technology (UHS2) : fT = 10.0 GHz • This product is improvement of ESD of NESG2xxx series. • 3-pin power minimold (34 PKG) ORDERING INFORMATION Part Number NESG240034 NESG240034-T1 Order Number NESG240034-A Package Quantity 3-pin power minimold 25 pcs (34 PKG) (Pb-Free) (Non reel) NESG240034-T1-A 1 kpcs/reel Supplying Form • Magazine case • 12 mm wide embossed taping • Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 25 pcs. Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PU10769EJ02V0DS (2nd edition) Date Published November 2009 NS Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2009 NESG240034 ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 5.5 V Collector to Emitter Voltage VCES 13 V Collector to Emitter Voltage VCEO 5.5 V Note 1 IB 36 mA Collector Current IC 400 mA 886 mW Base Current <R> Total Power Dissipation Ptot Note 2 Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Notes 1. Depend on the ESD protect device. 2. Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB THERMAL RESISTANCE (TA = +25°C) Parameter <R> Termal Resistance from Junction to Note Ambient Symbol Ratings Unit Rthj-a 141 °C/W Note Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB RECOMMENDED OPERATING RANGE (TA = +25°C) Parameter <R> Collector Current 2 Symbol MIN. TYP. MAX. Unit IC − 40 − mA Data Sheet PU10769EJ02V0DS NESG240034 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 100 nA Emitter Cut-off Current IEBO VEB = 0.4 V, IC = 0 mA − − 100 nA VCE = 5 V, IC = 15 mA 140 180 260 − VCE = 5 V, IC = 40 mA, f = 1 GHz − 10.0 − GHz ⏐S21e⏐ VCE = 5 V, IC = 40 mA, f = 1 GHz 8.5 10.5 − dB Noise Figure (1) NF1 VCE = 5 V, IC = 15 mA, f = 1 GHz, ZS = ZSopt, ZL = 50Ω − 0.7 1.1 dB Noise Figure (2) NF2 VCE = 5 V, IC = 40 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt − 0.9 − dB Associated Gain (1) Ga1 VCE = 5 V, IC = 15 mA, f = 1 GHz, ZS = ZSopt, ZL = 50Ω 8.0 10.0 − dB Associated Gain (2) Ga2 VCE = 5 V, IC = 40 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt − 11.0 − dB VCB = 5 V, IE = 0 mA, f = 1 MHz − 1.1 1.3 pF VCE = 5 V, IC = 40 mA, f = 1 GHz 9.5 11.5 − dB VCE = 5 V, IC (set) = 40 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt − 24 − dBm VCE = 5 V, IC (set) = 40 mA, f = 1 GHz, − 35.5 − dBm DC Current Gain hFE Note 1 RF Characteristics Gain Bandwidth Product fT 2 Insertion Power Gain Reverse Transfer Capacitance Maximum Stable Power Gain Cre Note 2 MSG Note 3 Gain 1 dB Compression Output Power PO (1 dB) Output 3rd Order Intercept Point OIP3 Δf = 1 MHz, ZS = ZSopt, ZL = ZLopt Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded. 3. MSG = S21 S12 hFE CLASSIFICATION Rank FB Marking SR hFE Value 140 to 260 Data Sheet PU10769EJ02V0DS 3 NESG240034 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Total Power Dissipation Ptot (mW) 1 000 Reverse Transfer Capacitance Cre (pF) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 3.8 cm × 9.0 cm × 0.8 mm (t), FR–4 886 500 0 0 25 50 75 100 125 150 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0 3 4 5 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 5 V 10 Collector Current IC (mA) Collector Current IC (mA) 2 Collector to Base Voltage VCB (V) VCE = 3 V 1 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.8 0.7 0.9 1.0 10 1 0.1 0.01 0.001 0.0001 0.4 Base to Emitter Voltage VBE (V) 400 4.0 mA 3.6 mA 3.2 mA 2.8 mA 2.4 mA 2.0 mA 300 1.6 mA 200 1.2 mA 0.8 mA 100 IB = 0.4 mA 0 0 1 2 3 0.5 0.6 0.7 0.8 0.9 Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 4 5 Collector to Emitter Voltage VCE (V) Remark The graphs indicate nominal characteristics. 4 1 Ambient Temperature TA (°C) 100 Collector Current IC (mA) <R> Data Sheet PU10769EJ02V0DS 1.0 NESG240034 DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 VCE = 3 V VCE = 5V DC Current Gain hFE DC Current Gain hFE 1 000 DC CURRENT GAIN vs. COLLECTOR CURRENT 100 10 1 0.001 0.01 0.1 100 10 1 0.001 1 0.01 Collector Current IC (A) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 20 20 VCE = 3 V, f = 1 GHz Gain Bandwidth Product fT (GHz) Gain Bandwidth Product fT (GHz) 1 Collector Current IC (A) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 15 10 5 0 1 0.1 10 100 VCE = 5 V, f = 1 GHz 15 10 5 0 1 Collector Current IC (mA) 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. Data Sheet PU10769EJ02V0DS 5 NESG240034 35 VCE = 3 V, IC = 40 mA 30 25 MSG MAG 20 MAG 15 MSG 2 |S21e| 10 5 0 0.1 1 10 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY VCE = 5 V, IC = 40 mA 30 25 MSG MAG 20 MSG MAG 15 |S21e|2 10 5 0 0.1 10 1 Frequency f (GHz) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 VCE = 3 V, f = 1 GHz 15 MSG MAG 10 |S21e|2 5 0 1 10 100 20 VCE = 5 V, f = 1 GHz MSG MAG 15 10 |S21e|2 5 0 –5 1 10 Collector Current IC (mA) Collector Current IC (mA) Remark The graphs indicate nominal characteristics. 6 35 Frequency f (GHz) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Data Sheet PU10769EJ02V0DS 100 NESG240034 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 3 14 12 Ga 10 2 8 6 1 4 NF 2 0 1 0 100 10 40 VCE = 5 V, f1 = 1.000 GHz, f2 = 1.001 GHz 30 20 10 0 1 10 100 Collector Current IC (mA) OUTPUT POWER, LINEAR GAIN, COLLECTOR CURRENT vs. INPUT POWER EACH OUTPUT POWER, IM3 vs. EACH INPUT POWER 25 400 Pout 350 300 20 250 15 GL 10 200 5 150 IC 0 100 50 –5 –10 –20 –10 0 10 0 30 20 Collector Current IC (mA) 30 450 VCE = 5 V, IC (set) = 40 mA, f = 1 GHz Each Output Power Pout (each) (dBm) 3rd Order Intermodulation Distortion IM3 (dB) Collector Current IC (mA) 35 Output Power Pout (dBm) Linear Gain GL (dB) Output 3rd Order Intercept Point OIP3 (dBm) 16 VCE = 5 V, f = 1 GHz, ZS = ZSopt, ZL = 50 Ω Associated Gain Ga (dB) Noise Figure NF (dB) 4 OUTPUT 3RD ORDER INTERCEPT POINT vs. COLLECTOR CURRENT 40 30 20 10 0 Pout –10 –20 –30 –40 –50 –60 –70 –80 –20 IM3 –10 VCE = 5 V, IC (set) = 40 mA, f1 = 1.000 GHz, f2 = 1.001 GHz 0 10 20 30 Each Input Power Pin (each) (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. S-PARAMETERS S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.necel.com/microwave/en/ Data Sheet PU10769EJ02V0DS 7 NESG240034 PACKAGE DIMENSIONS 3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm) 4.5±0.1 1.5±0.1 0.8 MIN. 2 1 3 0.42±0.06 4.0±0.25 2.5±0.1 1.6±0.2 0.42±0.06 0.47±0.06 1.5 3.0 PIN CONNECTIONS 1. Emitter 2. Collector 3. Base 8 Data Sheet PU10769EJ02V0DS 0.41+0.03 –0.06 NESG240034 • The information in this document is current as of November, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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