TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/323 DEVICES LEVELS 2N3250A 2N3250AUB 2N3251A 2N3251AUB JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 200 0.36 1.2 -65 to +200 mAdc Collector Current Total Power Dissipation (1) @ TA = +25°C @ TC = +25°C (1) Operating & Storage Junction Temperature Range PT TJ, Tstg W °C TO-39 (TO-205AD) THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Junction-to-Case Symbol RθJC Max. Unit 150 °C/W (1) Note: 1/ Consult 19500/323 for thermal curves ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Collector-Emitter Cutoff Voltage VBE = 3.0Vdc, VCE = 40Vdc VBE = 3.0Vdc, VCE = 40Vdc TA = 150°C Symbol Min. V(BR)CEO 60 ICEX Max. Unit Vdc 20 20 ηAdc μAdc Collector-Base Cutoff Current VCB = 60Vdc VCB = 40Vdc ICBO 10 20 μAdc ηAdc Emitter-Base Cutoff Current VEB = 5.0Vdc IEBO 10 μAdc Collector-Emitter Cutoff Voltage VBE = 3.0Vdc, VCE = 40Vdc IBEX 50 ηAdc T4-LDS-0093 Rev. 2 (101243) UB Package Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.) Parameters / Test Conditions ON CHARACTERTICS (2) Forward-Current Transfer Ratio IC = 0.1mAdc, VCE = 1.0Vdc Symbol Min. 2N3250A, AUB 2N3251A, AUB 40 80 IC = 1.0mAdc, VCE = 1.0Vdc 2N3250A, AUB 2N3251A, AUB 45 90 IC = 10mAdc, VCE = 1.0Vdc 2N3250A, AUB 2N3251A, AUB IC = 50mAdc, VCE = 1.0Vdc 2N3250A, AUB 2N3251A, AUB 2N3250A, AUB 2N3251A, AUB IC = 1.0mAdc, VCE = 1.0Vdc TA = -55°C hFE 50 100 Max. Unit 150 300 15 30 20 40 Collector-Emitter Saturation Voltage IC = 10mAdc, IB = 1.0mAdc IC = 50mAdc, IB = 5.0mAdc VCE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mAdc IC = 50mA, IB = 5.0mAdc VBE(sat) 0.25 0.50 Vdc 0.60 0.90 1.20 Vdc Symbol Min. Max. Unit hfe 50 100 200 400 Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 10mAdc, VCE = 20Vdc, f = 100kHz 2N3250A, AUB 2N3251A, AUB |hfe| 2.5 3.0 9.0 9.0 Output Capacitance VCB = 10Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz Cobo 6.0 pF Input Capacitance VEB = 1.0Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0MHz Cibo 8.0 pF Max. Unit ton 70 ηs toff 250 300 ηs DYNAMIC CHARACTERISTICS Parameters / Test Conditions Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz 2N3250A, AUB 2N3251A, AUB SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time VCC = 3.0Vdc; IC = 10mAdc; IB1 = 1.0mAdc Turn-Off Time VCC = 3.0Vdc; IC = 10mAdc; IB1 = IB2 = 1.0mAdc Symbol 2N3250A, AUB 2N3251A, AUB Min. (2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0% T4-LDS-0093 Rev. 2 (101243) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PACKAGE DIMENSIONS Symbol CD CH HD LC LD LL LU L1 L2 P Q TL TW r α Dimensions Inches Millimeters Min Max Min Max .178 .195 4.52 4.95 .170 .210 4.32 5.33 .209 .230 5.31 5.74 .100TP 2.54 TP .016 .021 0.41 0.53 .500 .750 12.70 19.05 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .100 2.54 .040 1.02 .028 .048 0.71 1.22 .036 .046 0.91 1.17 .010 0.25 45° TP 45° TP Notes 6 7, 8 7, 8 7, 8 7, 8 7, 8 5 3, 4 3 10 6 NOTES: 1. Dimension are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 inch (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by the gauge and gauging procedure shown in figure 2. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. 12. Lead 1 = emitter, lead 2 = base, lead 3 = collector. FIGURE 1. Physical dimensions (similar to TO-18). T4-LDS-0093 Rev. 2 (101243) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Ltr. BH BL BW CL CW LL1 LL2 Dimensions Inches Millimeters Min Max Min Max .046 .056 1.17 1.42 .115 .128 2.92 3.25 .085 .108 2.16 2.74 .128 3.25 .108 2.74 .022 .038 0.56 0.96 .017 .035 0.43 0.89 Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Note Ltr. LS1 LS2 LW r r1 r2 Dimensions Inches Millimeters Min Max Min Max .035 .039 0.89 0.99 0.71 .079 1.80 2.01 .016 .024 0.41 0.61 .008 0.20 .012 0.31 .022 0.56 Note NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas 4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 2. Physical dimensions, surface mount (UB version). T4-LDS-0093 Rev. 2 (101243) Page 4 of 4