HSMBJSAC5.0 thru HSMBJSAC50 500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE The HSMBJSAC transient voltage suppressor (TVS) series rated at 500 Watts provides an added rectifier element as shown in Figure 4 to achieve low capacitance in applications for data or signal lines. The low capacitance rating of less than 30 pF may be used for protecting higher frequency applications in inductive switching environments or electrical systems involving secondary lightning effects per IEC61000-4-5 as well as RTCA/DO-160D or ARINC 429 for airborne avionics. If bidirectional protection is needed, two HSMBJSAC devices in anti-parallel configuration are required as shown in Figure 6. With their very fast response time, they also provide ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively. DO-214AA See package notes WWW . Microsemi .C OM DESCRIPTION IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES • • • • • • • APPLICATIONS / BENEFITS Unidirectional low-capacitance TVS series (for bidirectional see Figure 6) Suppresses transient up to 500 Watts Peak Pulse Power @ 10/1000 µs Improved performance in low capacitance of 30 pF Economical small plastic surface mount with robust axial subassembly package Options for screening in accordance with MIL-PRF19500 for JAN, JANTX, JANTXV, and JANS are also available by adding MQ, MX, MV, or MSP prefixes respectively to part number, e.g. MXSAC5.0, MVSAC18, etc. Also available in surface mount with SMAJ prefix for part numbers (ex. SMAJSAC5.0) UL94V-0 Flammability Classification • • • • • MAXIMUM RATINGS • • • MECHANICAL AND PACKAGING o Peak Pulse Power Dissipation at 25 C: 500 Watts @ 10/1000 µs with repetition rate of 0.01% or less* o Steady State Power Dissipation* at TL = +75 C: 2.5 Watts. Clamping Speed (0 volts to V(BR) Min.) less than 5 nanoseconds. o o Operating and Storage Temperature: -65 C to +150 C. • • • CASE: Void Free Transfer Molded Thermosetting Plastic (see DO-214AA dimensions and notes) FINISH: All External Surfaces Are Corrosion Resistant and Leads Solderable POLARITY: Cathode (TVS) Marked with Band MARKING: Part number without HSMBJ prefix (ie. SAC5.0) • WEIGHT: 0.1 Grams (Approx.) • * TVS devices are not typically used for dc power dissipation and are instead operated < VWM (rated standoff voltage) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region) of the TVS element. Also see Figures 5 and 6 for further protection details in rated peak pulse power for unidirectional and bidirectional configurations respectively. Copyright 2002 11-24-2003 REV A Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 HSMBJSAC5.0 thru HSMBJSAC50 • Low Capacitance for data-line protection to 70 MHz Protection for aircraft fast data rate lines per select level waveforms in RTCA/DO-160D & ARINC 429 ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance: Class 1: HSMBJSAC5.0 to HSMBJSAC50 Class 2: HSMBJSAC5.0 to HSMBJSAC45 Class 3: HSMBJSAC5.0 to HSMBJSAC22 Class 4: HSMBJSAC5.0 to HSMBJSAC10 Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance Class 1: HSMBJSAC5.0 to HSMBJSAC26 Class 2: HSMBJSAC5.0 to HSMBJSAC15 Class 3: HSMBJSAC5.0 to HSMBJSAC7.0 HSMBJSAC5.0 thru HSMBJSAC50 500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION MICROSEMI PART NUMBER HSMBJSAC5.0 HSMBJSAC6.0 HSMBJSAC7.0 HSMBJSAC8.0 HSMBJSAC8.5 HSMBJSAC10 HSMBJSAC12 HSMBJSAC15 HSMBJSAC18 HSMBJSAC22 HSMBJSAC26 HSMBJSAC36 HSMBJSAC45 HSMBJSAC50 REVERSE STAND-OFF VOLTAGE (Note 1) VWM Volts 5.0 6.0 7.0 8.0 8.5 10 12 15 18 22 26 36 45 50 BREAKDOWN VOLTAGE @ I(BR) 1.0mA V(BR) Volts Min. 7.60 7.90 8.33 8.89 9.44 11.10 13.30 16.70 20.00 24.40 28.90 40.0 50.00 55.50 MAXIMUM MAXIMUM STANDBY CLAMPING CURRENT VOLTAGE @VWM IP = 5.0A* ID VC µA 300 300 300 100 50 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Volts 10.0 11.2 12.6 13.4 14.0 16.3 19.0 23.6 28.8 35.4 42.3 60.0 77.0 88.0 MAXIMUM PEAK PULSE CURRENT* RATING IPP CAPACITANCE @ O Volts WORKING INVERSE BLOCKING VOLTAGE VWIB INVERSE BLOCKING LEAKAGE CURRENT @ VWIB PEAK INVERSE BLOCKING VOLTAGE VPIB Amps 44 41 38 36 34 29 25 20 15 14 11.1 8.6 6.8 5.8 pF 30 30 30 30 30 30 30 30 30 30 30 30 30 30 Volts 75 75 75 75 75 75 75 75 75 75 75 75 150 150 IIB mA 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Volts 100 100 100 100 100 100 100 100 100 100 100 100 200 200 WWW . Microsemi .C OM ELECTRICAL CHARACTERISTICS @ 25oC *See Figure 3 Clamping Factor: The ratio of the numerical value of VC to V(BR) is typically 1.4 @ full rated power, 1.20 @ 50% rated power. Also see MicroNote 108. Note 1: A transient voltage suppressor is normally selected according to voltage (VWM), that should be equal to or greater than the dc or continuous peak operating voltage level. Note 2: When pulse testing, test in TVS avalanche direction. Do not pulse in “forward” direction. See section for “Schematic Applications” herein. . GRAPHS HSMBJSAC5.0 thru HSMBJSAC50 tw – Pulse Width µs FIGURE 1 Copyright 2002 11-24-2003 REV A Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2 HSMBJSAC5.0 thru HSMBJSAC50 SCOTTSDALE DIVISION 500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR IPP – Peak Pulse Current - % IPP % of Rated Power WWW . Microsemi .C OM Peak Power (Single Pulse) Average Power o TL – Lead Temperature – C t – Time – msec FIGURE 2 FIGURE 3 Lead Length = 3/8” SCHEMATIC APPLICATIONS The TVS low capacitance device configuration is shown in Figure 4. As a further option for unidirectional applications, an additional low capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in in Figure 5. In applications where random high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also provide a low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse voltage rating than the TVS clamping voltage VC. Consult factory for recommended rectifier part number. If using two (2) low capacitance TVS devices in anti-parallel for bidirectional applications, this added protective feature for both directions (including the reverse of each rectifier diode) is also provided. The unidirectional and bidirectional configurations in Figure 5 and 6 will both result in twice the capacitance of Figure 4. PACKAGE DIMENSIONS FIGURE 5 Optional Unidirectional configuration (TVS and separate rectifier diode) in parallel) DIM FIGURE 6 Optional Bidirectional configuration (two TVS devices in anti-parallel) Copyright 2002 11-24-2003 REV A A B C D E F G HSMBJSAC5.0 thru HSMBJSAC50 FIGURE 4 TVS with internal Low Capacitance Diode DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX .073 .160 .130 .205 .075 .030 .006 .087 .180 .155 .220 .130 .060 .016 1.85 4.06 3.30 5.21 1.91 .76 .15 2.21 4.57 3.94 5.59 3.30 1.52 .41 NOTE: Dimension E exceeds the JEDEC outline in height as shown Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 3