POWERSEM PSCH125

Single Phase
Half Controlled Bridges
with freewheeling diode
PSCH 125
IdAV
VRRM
= 123 A
= 400-1600 V
Preliminary Data Sheet
VRSM
VDSM
500
900
1300
1500
*1700
VRRM
VDRM
400
800
1200
1400
*1600
Type
PSCH 125/04
PSCH 125/08
PSCH 125/12
PSCH 125/14
PSCH 125/16
~
~
* Delivery on request
Test Conditions
IdAV
IFSM, ITSM
TC = 85 °C, module
TVJ = 45°C
t = 10 ms (50 Hz), sine
VR = 0
t = 8.3 ms (60 Hz), sine
123
1500
1600
A
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1350
1450
A
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
11 200
10 750
A2 s
A2 s
Applications
• Heat and temperature control for
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
9100
8830
A2 s
A2 s
TVJ = TJVM
repetitive, IT = 50 A
f = 400Hz, tP = 200µs
VD = 2/3 VDRM
150
A/µs
industrial furnaces and chemical
processes
• Lighting control
• Motor control
• Power converter
.
non repetitive, IT = 1/3 IdAV
IG = 0.3 A
diG/dt = 0.3 A/µs
500
A/µs
1000
V/µs
10
5
0.5
W
W
W
10
-40 ... + 125
125
-40 ... + 125
V
°C
°C
°C
2500
3000
V∼
V∼
5
5
270
Nm
Nm
g
∫ i2 dt
(di/dt)cr
Maximum Ratings
Features
• Package with screw terminals
• Isolation voltage 3000 V∼
• Planar glasspassivated chips
• Low forward voltage drop
• UL released, E 148688
Symbol
(dv/dt)cr
TVJ = TVJM
VDR = 2/3 VDRM
RGK = ∞, method 1 (linear voltage rise)
PGM
TVJ = TVJM
IT = ITAVM
PGAVM
VRGM
TVJ
TVJM
Tstg
VISOL
Md
Weight
50/60 HZ, RMS
IISOL ≤ 1 mA
≤
≤
tP = 30µs
tP = 500µs
t = 1 min
t=1s
Mounting torque
Terminal connection torque
typ.
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
(M6)
(M6)
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
• High power density
Package, style and outline
Dimensions in mm (1mm = 0.0394“)
 2003 POWERSEM reserves the right to change limits, test conditions and dimensions
PSCH 125
Symbol
Test Conditions
ID, IR
VT
VTO
rT
VGT
TVJ = TVJM, VR = VRRM, VD = VDRM
≤
IT = 200A, TVJ = 25°C
≤
For power-loss calculations only (TVJ = TVJM)
Characteristic Value
5
1.57
0.85
3.5
mA
V
V
mΩ
VD = 6V
TVJ = 25°C
TVJ = -40°C
≤
≤
1.5
1.6
V
V
IGT
VD = 6V
TVJ = 25°C
TVJ = -40°C
≤
≤
100
200
mA
mA
VGD
IGD
IL
TVJ = TVJM
TVJ = TVJM
VD = 2/3 VDRM
VD = 2/3 VDRM
≤
≤
0.2
5
V
mA
TVJ = 25°C, tP = 30µs
IG = 0.3A, diG/dt = 0.3A/µs
≤
450
mA
IH
tgd
TVJ = 25°C, VD = 6V, RGK = ∞
TVJ = 25°C, VD = ½ VDRM
IG = 0.3A, diG/dt = 0.3A/µs
≤
≤
200
2
mA
tq
TVJ = TVJM, IT = 20A, tP = 200µs, VR = 100V
-di/dt = 10A/µs, dv/dt = 15V/µs, VD = 2/3 VDRM
150
µs
RthJC
per thyristor; sine 180°el
per module
0.46
0.092
K/W
K/W
RthJK
per thyristor; sine 180° el
per module
0.55
0.11
K/W
K/W
dS
dA
a
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
10
9.4
50
mm
mm
m/s2
µs
300
[A]
250
IT(OV)
-----ITSM
1:T = 125°C
VJ
T =25°C
VJ
2:TVJ= 25°C
us
200
1.6
ITSM (A)
TVJ=45°C
TVJ=150°C
1500
1350
1.4
100
Limit
150
t gd
1.2
Typ.
1
100
0 VRRM
10
0.8
50
1/2 VRRM
I
F
0
1
0.5
1
VF[V]
0.6
2
1.5
2
Fig. 1 Forward current vs.
voltage drop per diode or
thyristor
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
1
10
100
I [mA]
G
1 VRRM
0.4
1000
Fig. 2 Gate trigger delay time
0
10
1
2
10 t[ms] 10
3
10
Fig. 3 Surge overload current
per diode (or thyristor) IFSM,
ITSM: Crest value t: duration
 2003 POWERSEM reserves the right to change limits, test conditions and dimensions
PSCH 125
10
V
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
4: PGAV = 0.5 W
5: PGM = 5 W
6: PGM = 10W
140
DC
[A]
120
sin.180°
rec.120°
rec.60°
100
80
6
1
rec.30°
60
5
40
4
VG
3
2
20
ITAV
1
0.1
10 0
10 1
0
50
10 2
IG
10 3
10 4
mA
Fig.4 Gate trigger characteristic
100
150
200
T (°C)
C
Fig.5 Maximum forward current
at case temperature
0.8
K/W
Z thJK
0.6
Z thJC
0.4
0.2
Z th
0.01
0.1
t[s]
1
10
Fig.6 Transient thermal impedance per thyristor or diode
(calculated)
400
[W] PSCH 125
350
80
0.13 0.07
= RTHCA [K/W]
TC
85
0.2
90
300
95
250
0.3
100
200
DC
sin.180°
rec.120°
rec.60°
rec.30°
100
50
PVTOT
0
105
0.51
150
110
115
1.13
120
°C
125
25
ITAVM
75
125 0
[A]
Tamb
50
100
[K]
150
Fig. 7 Power dissipation vs. direct output current and ambient
temperature
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
 2003 POWERSEM reserves the right to change limits, test conditions and dimensions