SANKEN SPB-G56S

Schottky Barrier Diodes
VF
(V)
max
IF
(A)
VR = VRM
max
Half-cycle Sinewave
Single Shot
Bridge
■ External Dimensions
0.62
0.7
1
100
20
0.072
82
–40 to +150
0.7
1.5
1
70
150 (Tj)
20
0.072
95
2.0
25
–40 to +150
0.69
2.0
1
15
100
20
0.072
2.0
40
–40 to +150
0.62
2.0
2
20
100
20
0.072
5.0
60
–40 to +150
0.7
5.0
3
125
150
5
0.29
6.0
40
–40 to +150
0.7
3.0
1
70
150
5
0.29
0.7
10
–40 to +150
0.62
0.7
1
7.5
100
22
0.13
0.7
10
–40 to +150
0.62
0.7
1
7.5
100
20
0.3
1.5
25
–40 to +150
0.62
1.5
1
15
100
17
0.3
1.5
25
–40 to +150
0.62
1.5
1
15
100
15
0.45
2.0
40
–40 to +150
0.62
2.0
2
20
100
12
0.6
3.5
70
–40 to +150
0.62
3.5
3
35
100
8
1.2
6.0
50
–40 to +150
0.62
5.0
5
50
100
4
2.1
4.0
40
–40 to +150
0.62
2.0
1
20
100
4
2.1
50
–40 to +150
0.62
5.0
2.5
50
100
4
2.1
10
60
–40 to +150
0.72
5.0
1
35
150 (Tj)
4
2.1
95
15
100
–40 to +150
0.62
7.5
5
75
100
2
5.5
94
20
150
–40 to +150
0.7
10.0
8
275
150
4
2.1
91
30
150
–40 to +150
0.7
15
8
400
150 (Tj)
4
2.1
92
30
150
–40 to +150
0.62
15.0
10
150
100
2
5.5
94
40
–40 to +150
0.62
2.0
2
20
100
5
4.25
95
10
4.0
2.3±0.4
6.5 ±0.4
5.4 ±0.4
5.4
4.1
a
b
5.5 ±0.4
2.6±0.2
1.7 ±0.5
0.55 ±0.1
2.9
2.5 ±0.4
0.05
2.05±0.2
c
1.35±0.4
+0.4
5.1 –0.1
1.15
±0.1
0.8 ±0.1
2.29 ±0.5 2.29 ±0.5
1.1±0.2
a: Part Number
b: Polarity
c: Lot No.
1 Chip
N.C
Center-tap Anode
Cathode
Anode
Cathode (Common)
Anode
4.0±0.2
38
2.54
25 ±0.2
3.3
3.8±0.2
15 ±0.2
11±0.2
(4) 9.5±0.2
20.0±0.5
16.5±0.5 3.5
(13.5)
4.6±0.2
3.6±0.2
12.5 ±0.2
C3
2.3
3.4
1.0
2.7±0.1
+0.2
0.65 –0.1
+0.2
0.45
1–0.1
5.45
5.45
2.6
2.4±0.1
7.5±0.1 7.5±0.1 7.5±0.1
4.2
2.8
3.3
16.9
1.35
0.85
6.5±0.2
3.2±0.2
5.0
15.0
9.0
20.0
0.8 2.8 5.0
16.9
4.0
8.4
2.54
91
2.6
3.9
8.0±0.2
7.2±0.2
62.5±0.7
7.2±0.2
4.0±0.2
2.6
0.8
1.35
1.35
0.85
89
0.8
Cathode Mark
Cathode Mark
2.2
C 0.5
3.9
2.2
88
4.0
8.4
1.4±0.1
0.98±0.05
Cathode Mark
62.5±0.7
5.0±0.2
2.7±0.2
0.78±0.05
5.08
4.2
2.8
87
(Common to backside of case)
0.55 ±0.1
50.0±0.1
Cathode Mark
62.3±0.7
Cathode Mark
5.0±0.2
62.3±0.7
0.78±0.05
3.3
86
Cathode Mark
1.5 max
1.5±0.2
0.6±0.05
10.0
85
4.9
10.0
2.7±0.2
84
0.57±0.02
0 to 0.25
0.8±0.1
2.0min
83
Flammability: UL94V-0 or Equivalent (Unit: mm)
4.5±0.2
1.35±0.4
7.5
+0.2
0.7 –0.1
(13.5)
Center-tap
–40 to +150
25
2.9±0.1
Frame-2Pin
Fig.
No.
10
50.0±1.0
60
Mass
(g)
0.16
Axial
Rth (j- )
Rth (j-c)
(°C/W)
1.5
0.7
Surface Mount
Center-tap
Ta
(°C)
0.7
1.2max
Surface Mount
SFPB-56
SFPW-56
SFPB-66
SFPB-76
SPB-G56S
SPB-66S
AK 06
EK 06
EK 16
RK 16
RK 36
RK 46
FMB-G16L
FMB-26
FMB-26L
FME-2106
FMB-36
FMB-2206
FMB-2306
FMB-36M
RBV-406B
VR = VRM
max
Page where
characteristic
curve is shown
50Hz
IR (H)
(mA)
IR
(mA)
Tstg
(°C)
1.37
Part Number
Tj
(°C)
5.0
Package
IFSM
(A)
I F (AV)
(A)
0.5 ±0.2
VRM
(V)
60V
0.45
Characteristic Curves
Schottky Barrier Diodes
SPB-G34S
VR —I R Characteristics (Typical)
t /T = 1/6
2.0
1.5
t /T= 1/ 3
1.0
t /T = 1/2
1
0.1
Ta = 125°C
100°C
60°C
28°C
0.01
0.5
Sinewave
0
95
100
105
110
115
120
125
0.001
0
0.2
Case Temperature Tc (°C)
0.4
0.6
Ta = 125°C
10
100°C
1
60°C
0.1
28°C
0.01
0.005
0.8
1.0
1.2
0
10
Forward Voltage VF (V)
20
30
40
Reverse Voltage
50
60
50
IFSM (A)
Reverse Current IR (mA)
10
2.5
I FMS Rating
I FSM (A)
100
30
D.C.
Forward Current I F (A)
IF(AV) (A)
Average Forward Current
VF —I F Characteristics (Typical)
VR =40V
Peak Forward Surge Current
Tc—IF (AV) Derating
3.0
20ms
40
30
20
10
0
1
5
VR (V)
10
50
Overcurrent Cycles
SPB-G54S
t /T= 1/ 3
2.0
t /T = 1/2
1.0
1
0.1
Ta = 125°C
100°C
60°C
28°C
0.01
Sinewave
0
70
80
90
100
110
120
130
0.001
0
0.2
Case Temperature Tc (°C)
0.4
0.6
Ta = 125°C
10
100°C
1
60°C
0.1
28°C
0.8
1.0
1.2
0.01
0.005
0
10
Forward Voltage VF (V)
20
30
40
Reverse Voltage
50
60
60
IFSM (A)
I FSM (A)
10
I FMS Rating
Peak Forward Surge Current
3.0
VR —I R Characteristics (Typical)
500
100
30
Reverse Current IR (mA)
4.0
t /T = 1/6
Average Forward Current
VF —I F Characteristics (Typical)
VR =40V
D.C.
Forward Current I F (A)
IF(AV) (A)
Tc—IF (AV) Derating
5.0
50
20ms
40
30
20
10
0
1
5
VR (V)
10
50
Overcurrent Cycles
SPB-G56S
t /T= 1/ 3
2.0
t /T = 1/2
0.1
Ta = 125°C
100°C
60°C
23°C
0.01
1.0
100°C
1
60°C
0.1
23°C
0.01
Sinewave
0
70
80
90
100
110
120
130
0.001
0.001
0
0.2
Case Temperature Tc (°C)
0.4
0.6
0.8
1.0
0
10
20
Forward Voltage VF (V)
30
40
50
Reverse Voltage
60
70
60
IFSM (A)
Reverse Current IR (mA)
t /T = 1/6
3.0
1
Ta = 125°C
10
I FMS Rating
I FSM (A)
D.C.
5.0
4.0
VR —I R Characteristics (Typical)
50
20
10
Peak Forward Surge Current
VF —I F Characteristics (Typical)
VR =60V
Forward Current I F (A)
Average Forward Current
IF(AV) (A)
Tc—IF (AV) Derating
6.0
50
20ms
40
30
20
10
0
1
5
VR (V)
10
50
Overcurrent Cycles
SPB-64S
t /T = 1/6
4.0
t /T= 1/ 3
3.0
t /T = 1/2
2.0
0.1
Ta = 125°C
100°C
60°C
27°C
0.01
1.0
0
70
80
90
100
110
120
130
0.001
100°C
1
60°C
0.1
0.2
Case Temperature Tc (°C)
0.4
0.6
0.8
1.0
27°C
0.01
0.001
0
Ta = 125°C
10
1.2
0
10
Forward Voltage VF (V)
20
30
40
Reverse Voltage
50
60
50
IFSM (A)
10
1
I FMS Rating
I FSM (A)
D.C.
Reverse Current IR (mA)
5.0
VR —I R Characteristics (Typical)
100
30
Peak Forward Surge Current
VF —I F Characteristics (Typical)
VR = 40V
Sinewave
Forward Current I F (A)
Average Forward Current
IF(AV) (A)
Tc—IF (AV) Derating
6.0
20ms
40
30
20
10
0
1
5
VR (V)
10
50
Overcurrent Cycles
SPB-66S
5
D.C.
Tc—IF (AV) Derating
6
Average Forward Current
Average Forward Current
t /T=1/6
3
t /T=1/3, Sinewave
2
Tj=150°C
1
t
T
0
100
110
120
130
140
Case Temperature Tc (°C)
84
150
VR —PR Characteristics
6
8
Tj= 150°C
t /T=1/6
5
t /T=1/3
4
IF(AV) —PF Characteristics
VR = 60V
4
t /T=1/2
3
Sinewave
D.C.
2
Tj=150°C
1
t
T
0
0
5
Reverse Power Loss PR (W)
VR =0V
t / T=1/2
Forward Power Loss PF (W)
Tc—IF (AV) Derating
IF(AV) (A)
IF(AV) (A)
6
t /T=1/6
t
T
4
t /T=1/3, Sinewave
3
t /T=1/2
2
D.C.
1
Tj=150°C
7
t
T
6
1– t / T=5/6
5
4
1– t / T=2/3
3
1– t / T=1/2
2
1
Sinewave
50
100
Case Temperature Tc (°C)
150
0
0
1
2
3
4
5
Average Forward Current IF(AV) (A)
6
0
0
10
20
30
Reverse Voltage
40
50
VR (V)
60