SAVANTIC 2SA1640

SavantIC Semiconductor
Product Specification
2SA1640
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220F package
·Low collector saturation voltage
·Good linearity of hFE
APPLICATIONS
·For switching regulator ,driver and
power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-30
V
VCEO
Collector-emitter voltage
Open base
-30
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-7
A
IB
Base current
-10
A
PC
Collector dissipation
40
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SA1640
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ; IB=0
-30
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ; IE=0
-30
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ; IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-3A ;IB=-0.1A
-0.4
V
VBEsat
Base-emitter saturation voltage
IC=-3A ;IB=-0.1A
-1.0
V
ICBO
Collector cut-off current
VCB=-30V; IE=0
-10
µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
µA
hFE
DC current gain
IC=-0.2A ; VCE=-2V
100
Transition frequency
IC=-0.5A ; VCE=-10V
20
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
300
MHz
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SA1640