SavantIC Semiconductor Product Specification 2SC2260 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2SA980 APPLICATIONS ·For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 8 A IB Base current 3 A PC Collector power dissipation 80 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 SavantIC Semiconductor Product Specification 2SC2260 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 100 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V Collector-emitter saturation voltage IC=3A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=160V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=3A ; VCE=4V Transition frequency IC=0.5A ; VCE=12V VCEsat fT CONDITIONS 2 MIN TYP. 30 MAX UNIT 180 15 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SC2260