2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 Features • • • • • • Tungsten schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability Epitaxial structure minimizes forward voltage drop Hermetically sealed, low profile ceramic surface mount power package Low package inductance • Very low thermal resistance • Available as standard polarity (strap-to-anode, 1N6816) and reverse polarity (strap-to-cathode: 1N6816R) MSASC25W45K (1N6816) MSASC25W45KR (1N6816R) Maximum Ratings @ 25°C (unless otherwise specified) DESCRIPTION Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, Tc≤ 145°C derating, forward current, Tc≥ 145°C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case: 1N6816 1N6816R 45 Volts 25 Amps LOW LEAKAGE SCHOTTKY DIODE SYMBOL MAX. UNIT VRRM VRWM VR IF(ave) dIF/dT IFSM IRRM Tj Tstg θJC 45 45 45 25 (3.3) 125 2 -55 to +175 -55 to +175 1.25 1.35 Volts Volts Volts Amps Amps/°C Amps Amp °C °C °C/W Mechanical Outline ThinKey™ 2 Datasheet# MSC1033A MSASC25W45K (1N6816) MSASC25W45KR (1N6816R) Electrical Parameters DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, pw= 300 µs d/c≤ 2% Junction Capacitance Breakdown Voltage Datasheet# MSC1033A SYMBOL IR25 IR125 VF1 VF2 VF3 VF4 VF5 VF6 Cj1 Cj2 BVR CONDITIONS VR= 45 Vdc, Tc= 25°C VR= 45 Vdc, Tc= 125°C IF= 5A, Tc= 25°C IF= 10A, Tc= 25°C IF= 20A, Tc= 25°C IF= 50A, Tc= 25°C IF= 10A, Tc= -55°C IF= 10A, Tc= 125°C VR= 10 Vdc VR= 5 Vdc IR= 1 mA, Tc= 25°C IR= 1 mA, Tc= -55°C MIN 45 TYP. 5 1.5 540 590 680 850 680 500 525 725 55 50 MAX 300 10 600 675 775 775 600 UNIT µA mA mV mV mV mV mV mV pF pF V V