SECOS LS4148

LS4148
Surface Mount Switching Diode
Elektr onische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
Quadro MELF
Features
Designed for mounting on small surface
High speed
High mounting capability,strong surge withstand,
high reliability
Mechanical Data
Dimensions in mm
Case: Quadro MELF Molded Glass
Terminals : Solder plated, solderable per MIL-STD-750
Method 2026
Polarity : Indicated by Cathode band
Mounting Position: Any
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
MAX.
UNIT
Repetitive peak reverse v oltage
PAR AME T E R
C ONDITIONS
V RM
100
V
Continuous revers e voltage
VR
75
V
IO
150
mA
Mean rectifying current
Forw ard sur ge curr ent
1 sec. s ingle half sine-w ave super imposed on
rate load (JEDEC methode)
S Y MB OL
IFSM
Power dissipation
Pd
Storage temperature
TJ
Operating temperature
MIN.
TSTG
T Y P.
mA
500
500
+ 175
-6 5
+ 175
mW
o
C
o
C
ELECTRICAL CHARACTERISTICS (AT TA=25oC unless otherwise noted)
T Y P.
MAX.
Forw ard voltage
PAR AME T E R
IF = 10 mA DC
C ONDITIONS
S Y MB OL
VF
MIN.
0.93
1.00
UNIT
V
Reverse c urrent
V R = 75 V
IR
0.02
5
uA
Capacitance betw een terminals
f=1MHz and applied 0VDCreverse voltage
CT
4
pF
Reverse rec overy time
VR=6V, I F=10mA, RL=50
trr
4
nS
http: //www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2
LS4148
Surface Mount Switching Diode
RATING AND CHARACTERISTIC CURVES ( LS4148 )
Fig. 2 Reverse characteristics
Fig. 1 Forward characteristics
REVERSE CURRENT : (A)
25
-25
10
75
100
125
FOR WARD CURRENT : (mA)
1000
125 O
100u
1u
75
100n
25
10n
0
1
0
1m
0.2
0.4
0.6
0.8
1.0
FORWARD VOLTAGE : (V)
1.2
20
40
60
80
100
120
140
REVERSE VOLT AGE : (V)
Fig. 3 Derating curve
Fig. 4 Capacitance between
CAP ACIT ANCE BETWEEN TERMINALS : (pF)
terminals characteristics
Mounting on glass epoxy PCBs
500
PD(mW)
400
300
200
100
0
0
50
100
150
AMBIENT TEMPERATURE : Ta
200
5.0
F=1MHZ
Ta=25
4.0
3.0
2.0
1.0
0
0
2
4
6
8
10
12
14
REVERSE VOLT AGE : V
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 2