1SS388 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 O Top View Marking Code: "O" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Maximum (Peak) Reverse Voltage VRM 45 V Reverse Voltage VR 40 V Average Forward Current IO 100 mA Maximum (Peak) Forward Current IFM 300 mA Surge Current (10 ms) IFSM 1 A Power Dissipation Ptot 150 mW Junction Temperature TJ 125 O Topr - 40 to + 100 O Ts - 55 to + 125 O Symbol Max. Unit Forward Voltage at IF = 50 mA VF 0.6 V Reverse Current at VR = 10 V IR 5 µA Total Capacitance at f = 1 MHz CT 25 pF Operating Temperature Range Storage Temperature Range C C C Characteristics at Ta = 25 OC Parameter SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006 1SS388 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006 1SS388 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-523 ALL ROUND C A ∠ HE D E bp A UNIT A bp C D E HE V mm 0.70 0.60 0.4 0.3 0.135 0.127 1.25 1.15 0.85 0.75 1.7 1.5 0.1 ∠ 5 O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006