SENSITRON 1N5550

1N5550/US
1N5551/US
1N5552/US
1N5553/US
1N5554/US
SENSITRON
_____
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 126, REV E
JAN
JANTX
JANTXV
HIGH CURRENT AXIAL LEAD RECTIFIERS
DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER
-Suffix “US” denotes melf/surface mount packaging
MAX. RATINGS / ELECTRICAL CHARACTERISTICS
RATING
Peak Inverse Voltage
(PIV)
1N5550
1N5551
1N5552
1N5553
1N5554
CONDITIONS
-
All ratings are at TA = 25oC unless otherwise specified.
MIN
TYP
-
-
MAX
UNIT
Vdc
200
400
600
800
1000
Average DC Output
Current (Io)
TA = +55 oC
-
-
3.0
Amps
Peak Single Cycle Surge
Current (Ifsm)
tp = 8.3 ms Single
Half Cycle Sine
Wave,
Superimposed On
Rated Load
-
-
150
Amps(pk)
Operating and Storage
Temp. (Top & Tstg)
Maximum Forward
Voltage (Vf)
1N5550
1N5551
1N5552
1N5553
1N5554
-
-65
-
+175
°C
If = 9.0A (300 µsec
pulse, duty cycle <
2%)
-
-
Maximum Instantaneous
Reverse Current At Rated
(PIV)
TA = 25° C
-
TA = 100° C
Reverse Recovery Time
(trr)
If = 0.5A, Ir = 1.0A, Irr
= 0.25A
Thermal Resistance (θJL)
Junction to Lead
Volts
1.2
1.2
1.2
1.3
1.3
-
1.0
µAmps
75
-
-
2000
nsec
22
°C/W
11
° C/W
d = 0.375”
Thermal Resistance (θJEC)
Junction to Endcap
-
-
• 221 West Industry Court Deer Park, NY 11729 (631) 586 7600, FAX (631) 242 9798 •
• World Wide Web - www.sensitron.com • E-mail Address - [email protected] •
1N5550/US
1N5551/US
1N5552/US
1N5553/US
1N5554/US
SENSITRON
_____
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 126, REV E
MECHANICAL DIMENSIONS In Inches / (mm), min./max.
0.042 (1.07
0.037 0.94)
.300 (7.62
.130 3.30)
.180 (4.57
.115 2.92)
1.30 (33.0
0.90 22.9)
PKG. 301
Note: The cathode side is marked with a dark colored band on one side of the diode body.
.028 (.72
.019 .48)
0.20 R Max
(5.08)
.003 Min
(.076)
.137 (3.4
.148 3.8)
.137 (3.4
.148 3.8 )
.200 5.0
.225 5.9)
MELF-B
Note: The cathode side is marked on body with a dark band.
• 221 West Industry Court Deer Park, NY 11729 (631) 586 7600, FAX (631) 242 9798 •
• World Wide Web - www.sensitron.com • E-mail Address - [email protected] •
SENSITRON
_____
SEMICONDUCTOR
1N5550/US
1N5551/US
1N5552/US
1N5553/US
1N5554/US
TECHNICAL DATA
DATA SHEET 126, REV E
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron
Semiconductor.
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maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
• 221 West Industry Court Deer Park, NY 11729 (631) 586 7600, FAX (631) 242 9798 •
• World Wide Web - www.sensitron.com • E-mail Address - [email protected]