SE2597L 2.4 GHz Power Amplifier with Power Detector Preliminary Information Applications Product Description The SE2597L is a 2.4 GHz power amplifier designed for use in the 2.4 GHz ISM band for wireless LAN applications. The device incorporates a power detector for closed loop monitoring of the output power. DSSS 2.4 GHz WLAN (IEEE802.11b) OFDM 2.4 GHz WLAN (IEEE802.11g) Access Points, PCMCIA, PC cards Features Single 3.3 V Supply Operation o 19 dBm, EVM = 3 %, 802.11g, OFDM 54 Mbps o 23 dBm, ACPR < -32 dBc, 802.11b 28 dB Gain Integrated temperature compensated power detector Integrated power amplifier enable pin (VEN) Lead Free, Halogen Free and RoHS compliant Small package: 16 pin 3 mm x 3 mm x 0.9 mm QFN The SE2597L includes a digital enable control for device on/off control. The SE2597L temperature compensated power detector is highly immune to mismatch at its output with less than 1.5 dB of variation with a 2:1 mismatch. Ordering Information Part Number Package Remark SE2597L SE2597L-R SE2597L-EK1 16 Pin QFN 16 Pin QFN Evaluation Kit Samples Tape and Reel Standard Functional Block Diagram Figure 1: Functional Block Diagram DST-00211 Rev 1.3 May-29-2009 1 of 2 SE2597L 2.4 GHz Power Amplifier with Power Detector Preliminary Information http://www.sige.com Email: [email protected] Customer Service Locations: North America: 1050 Morrison Drive, Suite 100 Ottawa ON K2H 8K7 Canada Hong Kong Phone: +852 3428 7222 Fax: +852 3579 5450 Phone: +1 613 820 9244 Fax: +1 613 820 4933 San Diego Phone: +1 858 668 3541 (ext. 226) Fax: +1 858 668 3546 United Kingdom Phone: +44 1279 464217 Fax: +44 1279 464201 Product Preview The datasheet contains information from the product concept specification. SiGe Semiconductor, Inc. reserves the right to change information at any time without notification. Preliminary Information The datasheet contains information from the design target specification. SiGe Semiconductor, Inc. reserves the right to change information at any time without notification. Production testing may not include testing of all parameters. Information furnished is believed to be accurate and reliable and is provided on an “as is” basis. SiGe Semiconductor, Inc. assumes no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any patent or other intellectual property rights of SiGe Semiconductor, Inc. or third parties. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SiGe Semiconductor, Inc. products are NOT authorized for use in implantation or life support applications or systems without express written approval from SiGe Semiconductor, Inc. Copyright 2009 SiGe Semiconductor, Inc. All Rights Reserved DST-00211 Rev 1.3 May-29-2009 2 of 2