SY DC34

DB3/DC34/DB4/DB6
SILICON BIDIRECTIONAL DIAC
FEATURES
The three layer,two terminal, axial lead, hermetically sealed diacs are
designed specifically for triggering thyristors. They demonstrate low breakover
current at breakover voltage as they withstand peak pulse current,The breakover
symmetry is within three volts(DB3,DC34,DB4)or four volts(DB6).These diacs are
intended for use in thyrisitors phase control, circuits for lamp dimming,universal
motor speed control, and heat control.
JF's DB3/DC34/DB4/DB6 are bi-directional trigged diode designed to operate
in conjunction with Triacs and SCR's
ABSOLUTE RATINGS(LIMITING VALUES)
Value
Symbols
Parameters
Units
DB3 DC34
Power Dissipation on Printed
Pc
TA=50
DB4
DB6
150
mW
Circuit(L=10mm)
ITRM
TSTG/TJ
Repetitive Peak in-state
tp=10u s
Current
F=100Hz
2.0
2.0
2.0
1.6
A
-40 to +125/-40 to 110
Storage and Operating Junction Temperature
ELECTRCAL CHARACTERISTICS
Value
Symbols
VBO
Parameters
Breakover Voltage(Note 2)
|+VBO|-
Breakover Voltage Symmetry
|-VBO|
|
V|
Units
DB3
DC34
DB4
DB6
c=22nF(Note 2)
Min
28
30
35
56
See diagram1
Typ
32
34
40
60
Max
36
38
45
70
c=22nF(Note 2)
V
Max
3
4
V
Min
5
10
V
See diagram1
Dynamic Breakover
Voltage(Note 1)
Vo
Output Voltage(Note 1)
IBO
Breakover Current(Note 1)
tr
Rise Time(Note 1)
IB
Test Conditions
Leakage Current(Note 1)
I=(IBO to IF=10mA)
See diagram1
Min
5
V
c=22nF(Note 2)
Max
100
A
See Diagram 3
Typ
1.5
S
Max
10
A
See diagram2
VB=0.5 VBO max
see diagram 1
Notes: 1. Electrical characteristics applicable in both forward and reverse directions.
2. Connected in parallel with the devices.
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DB3/DC34/DB4/DB6
SILICON BIDIRECTIONAL DIAC
RATINGS AND CHARACTERISTIC CURVES DB3/DC34/DB4/DB6
DIAGRAM 1: Current-voltage charateristics
DIAGRAM 2: Test circuit for output voltage
DIAGRAM 3: Test circuit see diagram2 adjust R for
Ip=0.5A
FIG.1-Power disspation versus ambient
temperature(maximum values)
FIG.2-Relative variation of VBO versus juntion
temperature(typical values)
FIG.3-Peak pulse current versus pulse duration
(maximum values)
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