TAK CHEONG Licensed by ON Semiconductor, A trademark of semiconductor Components Industries, LLC for Zener Technology and Products. 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators AXIAL LEAD DO35 Maximum Ratings (Note 1) Rating Symbol Value Units Maximum Steady State Power Dissipation PD 500 mW @TL≤75℃, Lead Length = 3/8” Derate Above 75℃ Operating and Storage Temperature Range TJ, Tstg 4.0 mW/℃ -65 to +200 °C Note 1: Some part number series have lower JEDEC registered ratings. L 52 xx B L 52xxB = Logo = 1N52xxB Device Code Specification Features: Zener Voltage Range = 2.4V to 200V ESD Rating of Class 3 (>6 KV) per Human Body Model DO-35 Package (DO-204AH) Double Slug Type Construction Metallurgical Bonded Construction RoHS Compliant Solder Hot Dip Tin (Sn) Lead Finish Cathode Anode Specification Features: Case : Double slug type, hermetically sealed glass Finish : All external surfaces are corrosion resistant and leads are readily solderable Polarity : Cathode indicated by polarity band Mounting: Any November 2006 / C Page 1 1N5221B through 1N5281B Series ® ® TAK CHEONG Licensed by ON Semiconductor, A trademark of semiconductor Components Industries, LLC for Zener Technology and Products. ELECTRICAL CHARACTERISTICS (TA = 25℃ unless otherwise noted. ) Zener Voltage (Note 3.) Device (Note 2.) Device Marking VZ (Volts) Zener Impedance (Note 4.) @IZT ZZT @IZT Leakage Current ZZK @IZK θVZ (Note 5.) IR @ V R Min Nom Max (mA) (Ω) (Ω) (mA) (uA Max) (Volts) (%/℃) 1N5221B 1N5221B 2.280 2.4 2.520 20 30 1200 0.25 100 1 -0.085 1N5222B 1N5222B 2.375 2.5 2.625 20 30 1250 0.25 100 1 -0.085 1N5223B 1N5223B 2.565 2.7 2.835 20 30 1300 0.25 75 1 -0.080 1N5224B 1N5224B 2.660 2.8 2.940 20 30 1400 0.25 75 1 -0.080 1N5225B 1N5225B 2.850 3.0 3.150 20 29 1600 0.25 50 1 -0.075 1N5226B 1N5226B 3.135 3.3 3.465 20 28 1600 0.25 25 1 -0.070 1N5227B 1N5227B 3.420 3.6 3.780 20 24 1700 0.25 15 1 -0.065 1N5228B 1N5228B 3.705 3.9 4.095 20 23 1900 0.25 10 1 -0.060 1N5229B 1N5229B 4.085 4.3 4.515 20 22 2000 0.25 5 1 ±0.055 1N5230B 1N5230B 4.465 4.7 4.935 20 19 1900 0.25 5 2 ±0.030 1N5231B 1N5231B 4.845 5.1 5.355 20 17 1600 0.25 5 2 ±0.030 1N5232B 1N5232B 5.320 5.6 5.880 20 11 1600 0.25 5 3 +0.038 1N5233B 1N5233B 5.700 6.0 6.300 20 7 1600 0.25 5 3.5 +0.038 1N5234B 1N5234B 5.890 6.2 6.510 20 7 1000 0.25 5 4 +0.045 1N5235B 1N5235B 6.460 6.8 7.140 20 5 750 0.25 3 5 +0.050 1N5236B 1N5236B 7.125 7.5 7.875 20 6 500 0.25 3 6 +0.058 1N5237B 1N5237B 7.790 8.2 8.610 20 8 500 0.25 3 6.5 +0.062 1N5238B 1N5238B 8.265 8.7 9.135 20 8 600 0.25 3 6.5 +0.065 1N5239B 1N5239B 8.645 9.1 9.555 20 10 600 0.25 3 7 +0.068 1N5240B 1N5240B 9.500 10 10.500 20 17 600 0.25 3 8 +0.075 1N5241B 1N5241B 10.45 11 11.55 20 22 600 0.25 2 8.4 +0.076 1N5242B 1N5242B 11.40 12 12.60 20 30 600 0.25 1 9.1 +0.077 1N5243B 1N5243B 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9 +0.079 1N5244B 1N5244B 13.30 14 14.70 9 15 600 0.25 0.1 10 +0.082 1N5245B 1N5245B 14.25 15 15.75 8.5 16 600 0.25 0.1 11 +0.082 1N5246B 1N5246B 15.20 16 16.80 7.8 17 600 0.25 0.1 12 +0.083 1N5247B 1N5247B 16.15 17 17.85 7.4 19 600 0.25 0.1 13 +0.084 1N5248B 1N5248B 17.10 18 18.90 7 21 600 0.25 0.1 14 +0.085 1N5249B 1N5249B 18.05 19 19.95 6.6 23 600 0.25 0.1 14 +0.086 1N5250B 1N5250B 19.00 20 21.00 6.2 25 600 0.25 0.1 15 +0.086 1N5251B 1N5251B 20.90 22 23.10 5.6 29 600 0.25 0.1 17 +0.087 1N5252B 1N5252B 22.80 24 25.20 5.2 33 600 0.25 0.1 18 +0.088 1N5253B 1N5253B 23.75 25 26.25 5 35 600 0.25 0.1 19 +0.089 1N5254B 1N5254B 25.65 27 28.35 4.6 41 600 0.25 0.1 21 +0.090 1N5255B 1N5255B 26.60 28 29.40 4.5 44 600 0.25 0.1 21 +0.091 1N5256B 1N5256B 28.50 30 31.50 4.2 49 600 0.25 0.1 23 +0.091 1N5257B 1N5257B 31.35 33 34.65 3.8 58 700 0.25 0.1 25 +0.092 1N5258B 1N5258B 34.20 36 37.80 3.4 70 700 0.25 0.1 27 +0.093 1N5259B 1N5259B 37.05 39 40.95 3.2 80 800 0.25 0.1 30 +0.094 1N5260B 1N5260B 40.85 43 45.15 3.0 93 800 0.25 0.1 33 +0.095 VF = 1.1V Max @IF = 200mA for 60V below types, VF = 1.4V Max @IF = 200mA for 60V above types November 2006 / C Page 2 ® TAK CHEONG Licensed by ON Semiconductor, A trademark of semiconductor Components Industries, LLC for Zener Technology and Products. ELECTRICAL CHARACTERISTICS (TA = 25℃ unless otherwise noted. ) Zener Voltage (Note 2.) Device (Note 1.) Device Marking VZ (Volts) Zener Impedance (Note 3.) @IZT ZZT @IZT ZZK @IZK Leakage Current θVZ (Note 4.) IR @ V R Min Nom Max (mA) (Ω) (Ω) (mA) (uA Max) (Volts) (mA) 1N5261B 1N5261B 44.65 47 49.35 2.7 105 1000 0.25 0.1 36 +0.095 1N5262B 1N5262B 48.45 51 53.55 2.5 125 1100 0.25 0.1 39 +0.096 1N5263B 1N5263B 53.20 56 58.80 2.2 150 1300 0.25 0.1 43 +0.096 1N5264B 1N5264B 57.00 60 63.00 2.1 170 1400 0.25 0.1 46 +0.097 1N5265B 1N5265B 58.90 62 65.10 2.0 185 1400 0.25 0.1 47 +0.097 1N5266B 1N5266B 64.60 68 71.40 1.8 230 1600 0.25 0.1 52 +0.097 1N5267B 1N5267B 71.25 75 78.75 1.7 270 1700 0.25 0.1 56 +0.098 1N5268B 1N5268B 77.90 82 86.10 1.5 330 2000 0.25 0.1 62 +0.098 1N5269B 1N5269B 82.65 87 91.35 1.4 370 2200 0.25 0.1 68 +0.099 1N5270B 1N5270B 86.45 91 95.55 1.4 400 2300 0.25 0.1 69 +0.099 1N5271B 1N5271B 95.0 100 105.0 1.3 500 2600 0.25 0.1 76 +0.11 1N5272B 1N5272B 104.5 110 115.5 1.1 750 3000 0.25 0.1 84 +0.11 1N5273B 1N5273B 114.0 120 126.0 1.0 900 4000 0.25 0.1 91 +0.11 1N5274B 1N5274B 123.5 130 136.5 0.95 1100 4500 0.25 0.1 99 +0.11 1N5275B 1N5275B 133.0 140 147.0 0.9 1300 4500 0.25 0.1 106 +0.11 1N5276B 1N5276B 142.5 150 157.5 0.85 1500 5000 0.25 0.1 114 +0.11 1N5277B 1N5277B 152.0 160 168.0 0.8 1700 5500 0.25 0.1 122 +0.11 1N5278B 1N5278B 161.5 170 178.5 0.74 1900 5500 0.25 0.1 129 +0.11 1N5279B 1N5279B 171.0 180 189.0 0.68 2200 6000 0.25 0.1 137 +0.11 1N5280B 1N5280B 180.5 190 199.5 0.66 2400 6500 0.25 0.1 144 +0.11 1N5281B 1N5281B 190.0 200 210.0 0.65 2500 7000 0.25 0.1 152 +0.11 VF = 1.1V Max @IF = 200mA for 60V below types, VF = 1.4V Max @IF = 200mA for 60V above types 2. TOLERANCE AND TYPE NUMBER DESIGNATION (VZ) The type numbers listed have a standard tolerance on the nominal zener voltage of ± 5%. 3. ZENER VOLTAGE (VZ) MEASUREMENT The zener voltage (VZ) is tested under pulse condition. The measured VZ is guaranteed to be within specification with device junction in thermal equilibrium. 4. ZENER IMPEDANCE (ZZ) DERIVATION ZZT and ZZk are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC) with AC frequency = 60Hz. 5. TEMPERATURE COEFFICIENT (θVZ) Test conditions for temperature coefficient are as follows: A. IZT = 7.5mA, T1 = 25℃, T2 = 125℃ (1N5221B through 1N5242B) B. IZT = Rated IZT , T1 = 25℃, T2= 125℃ (1N5243B through 1N5281B) Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temperature. November 2006 / C Page 3 ® TAK CHEONG Licensed by ON Semiconductor, A trademark of semiconductor Components Industries, LLC for Zener Technology and Products. Package Outline Case Outline DO-35 DIM Millimeters Inches Min Max Min Max A 0.46 0.56 0.018 0.022 B 3.05 5.08 0.120 0.200 C 25.40 38.10 1.000 1.500 D 1.52 2.29 0.060 0.090 Note: all dimensions are within JEDEC standard. This datasheet presents technical data of Tak Cheong’s Zener Diodes. Complete specifications for the individual devices are provided in the form of datasheets. A comprehensive Selector Guide is included to simplify the task of choosing the best set of components required for a specific application. For additional information, please visit our website http://www.takcheong.com. Although information in this datasheet has been carefully checked, no responsibility for the inaccuracies can be assumed by Tak Cheong. Please consult your nearest Tak Cheong’s sales office for further assistance. Tak Cheong reserves the right to make changes without further notice to any products herein to further improve reliability, function or design, cost and productivity. TAK CHEONG November 2006 / C ® and are registered trademarks of Tak Cheong Electronics (Holdings) Co., Ltd. Page 4