WINSEMI SCH4C60S

SCH4C60S
Silicon Controlled Rectifiers
Features
◆
◆
G
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 4 A )
Low On-State Voltage (1.6V(Typ.) @ ITM)
▼
◆
A
K
General Description
Sensitive gate triggering SCR is suitable for the application
where requiring high bidirectional blocking voltage capability
and also suitable for over voltage protection ,motor control circuit
in power tool, inrush current limit circuit and heating control
system.
TO202-3
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
VDRM
ConditionParameter
Condition
Repetitive Peak Off-State Voltage
Ti =60 °C
Tamb=25 °C
Ti =60 °C
Tamb=25 °C
1/2 Cycle, 60Hz, Sine
Wave
Non-Repetitive
ngs
Ratings
Units
600
1.35
0.9
4
1.35
V
33
A
IT(AV)
Average On-State Current(180°
Conduction Angle)
IT(RMS)
R.M.S On-State Current(180°
Conduction Angle)
ITSM
Surge On-State Current
I2t
I2t for Fusing
t =10ms
4.5
A2s
di/dt
Critical rate of rise of on-state current
F=60Hz,Tj=125 °C
50
A/㎲
PGM
Forward Peak Gate Power Dissipation
0.5
W
PG(AV)
Forward Average Gate Power
Dissipation
0.2
W
IFGM
Forward Peak Gate Current
1.2A
A
TJ
Operating Junction Temperature
-40-125 °C
°C
TSTG
Storage Temperature
-40-150 °C
°C
Tj=125 °C
A
A
Thermal Characteristics
Symbol
RθJc
Parameter
Thermal Resistance Junction to Case(DC)
RθJA
Thermal Resistance Junction to Ambient(DC)
Jan 2009. Rev. 0
Value
15
100
Units
℃/W
℃/W
1/5
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
SCH4C60S
Electrical Characteristics (TC=25℃
unless otherwise noted)
Value
Symbol
Parameter
IDRM
Repetitive Peak Off-State Current
VTM
Peak On-State Voltage (1)
IGT
Gate Trigger Current (2)
Test Conditions
Units
Min
Typ
Max
-
-
5
μA
-
-
1
mA
-
-
1.8
V
20
-
50
μA
-
-
0.8
V
VAK=VDRM RGK=1KΩ
ITM=8A, tp=380㎲
VD=12V,RL=140
VGT
Gate Trigger Voltage (2)
VGD
Non-Trigger Gate Voltage (1)
VD=12V,RL=3.3KΩ, RGK=1 KΩ
0.1
dv/dt
Critical Rate of Rise Off-State Voltage
VD=67%VDRM, RGK=1 KΩ
15
-
-
V/㎲
IH
Holding Current
IT=50mA, RGK=1 KΩ
-
-
5
mA
IL
Latching Current
IT=1mA, RGK=1 KΩ
6
-
-
mA
Rd
Dynamic resistance
Tj=125°C
-
-
100
mΩ
V
Note:
1. Pulse Width = 1.0 ms , Duty cycle ≤ 1%
2. RGK Current not Included in measurement
2/5
SCH4C60S
Fig. 1 IT(AV)(DC
DC)) vs lead Temperature
Fig. 3 IGT,IH,IL Temperature Characteristics
Fig.5 dv/dt VS RGK
Fig. 2
PD(AV) VS IT(AV)
Fig. 4 ITSM VS Number oof cycles
Fig.6 dv/dt VS CGK
3/5
SCH4C60S
Fig.
7 On-state Characteristics
Fig.7
Fig.8 RθJA VS Pulse duration
4/5
SCH4C60S
plastics
TO-202-3(
TO-202-3(plastics
plastics)) Package Dimension
DIM
A
C
D
F
H
J
M
N
N1
O
P
Min
mm
Type
Max
10.1
7.3
10.5
Min
Inch
Type
Max
0.398
0.287
0.413
1.5
0.51
1.5
4.5
0.59
0.020
0.059
0.177
5.3
2.54
0.209
0.100
1.4
0.7
0.055
0.028
5/5