VRSM IF(AV)M IF(RMS) IFSM VF0 rF = = = = = = 2800 6830 10730 87×103 0.8 0.05 Rectifier Diode V A A A V mΩ 5SDD 60N2800 Doc. No. 5SYA1155-01 Jan. 05 • Patented free-floating silicon technology • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1) Parameter Symbol Conditions Value Unit Repetitive peak reverse voltage VRRM f = 50 Hz, tp = 10ms, Tj = 160°C 2000 V Non - repetitive peak reverse voltage VRSM f = 5 Hz, tp = 10ms, Tj = 160°C 2800 V Characteristic values Parameter Symbol Conditions Max. (reverse) leakage current IRRM min typ VRRM, Tj = 160°C max 400 Unit mA Mechanical data Maximum rated values 1) Parameter Symbol Conditions Mounting force FM Acceleration a Acceleration a min 81 typ 90 max Unit 108 kN Device unclamped 50 m/s 2 Device clamped 100 m/s 2 Characteristic values Parameter Symbol Conditions Weight m Housing thickness H Surface creepage distance DS FM = 90 kN, Ta = 25 °C min typ 34.3 56 Air strike distance Da 22 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. max Unit 2.8 kg 34.9 mm mm mm 5SDD 60N2800 On-state Maximum rated values 1) Parameter Symbol Conditions Max. average on-state current IF(AV)M Max. RMS on-state current IF(RMS) Max. peak non-repetitive surge current IFSM Limiting load integral I2t Max. peak non-repetitive surge current IFSM Limiting load integral I2t min typ 50 Hz, Half sine wave, TC = 90 °C tp = 10 ms, Tj = 160°C, VR = 0 V tp = 8.3 ms, Tj = 160°C, VR = 0 V max Unit 6830 A 10730 A 87×10 3 A 38.5×10 6 A2s 95×10 3 A 38×10 6 A2s Characteristic values Parameter Symbol Conditions On-state voltage VF Threshold voltage V(T0) Slope resistance rT min typ max Unit IF = 5000 A, Tj = 160°C 1.05 V Tj = 160°C IT = 2500...7500 A 0.8 V 0.05 mΩ max Unit 6300 µAs Switching Characteristic values Parameter Symbol Conditions Recovery charge Qrr min typ diF/dt = -10 A/µs, VR = 200 V IFRM = 4000 A, Tj = 160°C ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1155-01 Jan. 05 page 2 of 6 5SDD 60N2800 Thermal Maximum rated values 1) Parameter Symbol Conditions Operating junction temperature range Tvj min max Unit 160 °C 175 °C max Unit Double-side cooled Fm = 81...108 kN 5.7 K/kW Rth(j-c)A Anode-side cooled Fm = 81...108 kN 11.4 K/kW Rth(j-c)C Cathode-side cooled Fm = 81...108 kN 11.4 K/kW Double-side cooled Fm = 81...108 kN 1 K/kW Single-side cooled Fm = 81...108 kN 2 K/kW Storage temperature range Tstg typ -40 Characteristic values Symbol Conditions Parameter Thermal resistance junction Rth(j-c) to case Thermal resistance case to Rth(c-h) heatsink Rth(c-h) min typ Analytical function for transient thermal impedance: n Zth(j-c) (t) = ∑ R th i (1 - e-t/τ i ) i =1 i 1 2 3 4 Rth i(K/kW) 3.731 1.250 0.434 0.292 τi(s) 0.8113 0.1014 0.0089 0.0015 Fig. 1 Transient thermal impedance junction-tocase. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1155-01 Jan. 05 page 3 of 6 Fig. 2 On-state characteristics. 5SDD 60N2800 5SDD 60N2800 5SDD 60N2800 Fig. 3 On-state characteristics. Pf (W) Fig. 4 On-state power losses vs average on-state current. Fig. 5 Max. permissible case temperature vs average on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1155-01 Jan. 05 page 4 of 6 5SDD 60N2800 IFSM [kA] ∫ i2dt [MA2s] 5SDD 60N2800 150 50 IFSM 140 48 Tj = 160°C IFSM (kA) 90 Tj = 160°C 80 130 46 120 44 110 42 100 40 90 38 80 36 30 70 34 20 32 10 70 60 50 50 30 100 101 102 0 5SDD 60N2800 ∫i2t 60 40 1 2 3 4 5 20 6 7 8 10 np t [ms] Fig. 6 Surge on-state current vs. pulse length. Halfsine wave. Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. Qrr (µAs) 700 600 500 30000 I FRM = 4000 A Tj = Tjmax 300 200 5SDD 60N2800 104 8000 7000 6000 5000 4000 3000 2000 1 I FRM = 4000 A 400 Tj = Tjmax 2 3 4 5 6 7 8 9 10 20 30 102 80 70 60 50 40 5SDD 60N2800 20000 I RM(A) 30 1 2 3 4 5 6 7 8 910 -di F/dt (A/µs) Fig. 8 Recovery charge vs. decay rate of on-state current. 20 30 -diF /dt(A/µs) Fig. 9 Peak reverse recovery current vs. decay rate of on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1155-01 Jan. 05 page 5 of 6 5SDD 60N2800 H Fig. 10 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. Related application notes: Doc. Nr Titel 5SYA 2020 Design of RC-Snubbers for Phase Control Applications 5SYA 2029 Designing Large Rectifiers with High Power Diodes 5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1155-01 Jan. 05