APTGT225DU170 Dual common source Trench + Field Stop IGBT® Power Module C2 Q2 G2 E1 E2 E G1 C1 E C2 E1 E2 G2 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1700 340 225 450 ±20 1250 Tj = 125°C 450A @ 1600V TC = 25°C TC = 80°C TC = 25°C Unit V A V W May, 2005 Q1 G1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT225DU170 – Rev 0 C1 VCES = 1700V IC = 225A @ Tc = 80°C APTGT225DU170 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Td(off) Tf Eon Eoff Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Diode ratings and characteristics Symbol Characteristic VRRM VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 225A Tj = 125°C VGE = VCE , IC = 4mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz 5.0 Min Inductive Switching (25°C) VGE = 15V VBus = 900V IC = 225A R G = 3.3Ω Inductive Switching (125°C) VGE = 15V VBus = 900V IC = 225A R G = 3.3Ω Test Conditions Typ 2.0 2.4 5.8 Typ 20 0.8 0.66 370 40 Max Unit 500 2.4 µA 6.5 600 V nA Max Unit nF ns 650 180 400 50 800 300 72 70.5 Min Typ ns mJ Max 1700 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current VR=1700V IF(A V) Maximum Average Forward Current 50% duty cycle VF Diode Forward Voltage IF = 225A trr Reverse Recovery Time IF = 225A VR = 900V Qrr Reverse Recovery Charge di/dt =2400A/µs Unit V Tj = 25°C Tj = 125°C 500 750 Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 225 1.8 1.9 385 Tj = 125°C Tj = 25°C 490 60 Tj = 125°C 96 µA A 2.2 V ns µC May, 2005 IRM V APT website – http://www.advancedpower.com 2-5 APTGT225DU170 – Rev 0 Symbol Cies Coes Cres Td(on) Tr Min APTGT225DU170 Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 3400 -40 -40 -40 3 2 Typ Max 0.1 0.18 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g APT website – http://www.advancedpower.com 3-5 APTGT225DU170 – Rev 0 May, 2005 Package outline (dimensions in mm) APTGT225DU170 Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 450 450 VGE=20V 300 300 IC (A) IC (A) 350 TJ=25°C 350 TJ=125°C 250 200 VGE =13V 250 200 150 150 100 100 50 50 0 VGE =15V VGE=9V 0 0 1 2 V CE (V) 3 4 0 Transfert Characteristics 400 TJ=25°C 120 250 E (mJ) 300 T J=125°C 200 2 3 VCE (V) VCE = 900V VGE = 15V RG = 3.3Ω TJ = 125°C 150 350 1 4 5 Energy losses vs Collector Current 180 450 IC (A) TJ = 125°C 400 400 Eon Eoff 90 Er 60 150 100 T J=125°C 30 50 0 0 5 6 7 8 9 10 11 12 0 13 100 Switching Energy Losses vs Gate Resistance Eon 500 90 400 IC (A) E (mJ) 400 500 VCE = 900V VGE =15V IC = 225A T J = 125°C 120 300 Reverse Bias Safe Operating Area 180 150 200 IC (A) V GE (V) Eoff 60 300 200 V GE=15V T J=125°C RG=3.3Ω Er 100 30 0 0 2 4 6 8 10 12 14 16 Gate Resistance (ohms) 18 0 20 400 800 1200 1600 2000 V CE (V) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.9 0.08 0.7 0.06 0.5 0.04 0.3 May, 2005 IGBT 0.1 0.02 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) APT website – http://www.advancedpower.com 1 10 4-5 APTGT225DU170 – Rev 0 Thermal Impedance (°C/W) 0.12 APTGT225DU170 Forward Characteristic of diode 450 V CE=900V D=50% RG =3.3Ω T J=125°C T C=75°C ZCS 15 ZVS 400 350 TJ =25°C 300 I C (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 20 10 250 200 T J=125°C 150 5 hard switching TJ =125°C 100 50 0 0 0 60 120 180 IC (A) 240 300 0 360 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (°C/W) 0.2 0.16 Diode 0.9 0.7 0.12 0.5 0.08 0.04 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGT225DU170 – Rev 0 May, 2005 rectangular Pulse Duration (Seconds)