Solderable Silicon Photodiodes PDB-V601-1 PACKAGE DIMENSIONS INCH [mm] CHIP DIMENSIONS INCH [mm] .021 [0.53] .014 [0.36] .030 [0.76] .040 [1.02] .125 [3.18] .074 [1.88] ACTIVE AREA CHIP DIMENSIONS INCH [mm] .022 [0.56] ACTIVE AREA SOLDERABLE PHOTODIODE BARE SHIP PACKAGE DESCRIPTION APPLICATIONS • Red enhanced The PDB-V601-1 is a silicon red enhanced • Photovoltaic solderable photodiode designed for low noise and for • High quantum efficiency photovoltaic applications. • • • • SPECTRAL RESPONSE ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL ISC ID RSH CJ lrange VBR NEP tr CHARACTERISTIC TEST CONDITIONS MIN TYP Short Circuit Current Dark Current Shunt Resistance Junction Capacitance Spectral Application Range Breakdown Voltage Noise Equivalent Power Response Time H = 100 fc, 2850 K VR = 5 V VR = 10 mV VR = 0 V, f = 1 MHz Spot Scan I = 10 μA VR = 0V @ l=Peak RL = 1KΩ,VR = 0 V 10 13 3 250 250 100 350 5 MAX 7 1100 15 2x10-14 300 UNITS μA nA MW pF nm V W/ √ Hz nS **Response time of 10% to 90% is specified at 660nm wavelength light. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com 1150 1100 950 1050 Wavelength (nm) 1000 250 * 1/16 inch from case for 3 seconds max. 0.10 0.00 900 °C 850 +224 0.30 0.20 800 +100 0.50 0.40 750 Soldering Temperature* -40 °C °C 700 TS +125 650 Operating Temperature -40 0.70 0.60 600 TO V 550 Storage Temperature 25 500 TSTG UNITS 450 Reverse Voltage MAX 350 VBR MIN 300 PARAMETER 0.80 Responsivity (A/W) SYMBOL Optical encoder Position sensor Industrial controls Instrumentation 400 FEATURES