Solderable Silicon Photodiodes PDB-V609-3 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] ±.050 [1.27] 1.00 [25.4] 30 AWG BUSS WIRE, ANODE .021 [0.53] .014 [0.36] BACKSIDE METAL, CATHODE CHIP DIMENSIONS INCH [mm] CHIP DIMENSIONS INCH [mm] .284 [7.21] SQUARE SOLDERABLE PHOTODIODE BUSS WIRE PACKAGE .030 [0.76] .239 [6.07] ACTIVE AREA .275 [6.98] ACTIVE AREA DESCRIPTION APPLICATIONS • Red enhanced The PDB-V609-3 is a silicon, planar diffused, red • Photovoltaic enhanced solderable photodiode that comes in buss • High quantum efficiency wire leads . • • • • SPECTRAL RESPONSE ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL ISC ID RSH CJ lrange VBR NEP tr CHARACTERISTIC TEST CONDITIONS MIN TYP Short Circuit Current Dark Current Shunt Resistance Junction Capacitance Spectral Application Range Breakdown Voltage Noise Equivalent Power Response Time H = 100 fc, 2850 K VR = 5 V VR = 10 mV VR = 0 V, f = 1 MHz Spot Scan I = 10 μA VR = 0V @ l=Peak RL = 1KΩ,VR = 0 V 490 545 50 15 5500 5 350 5 MAX 100 1100 15 1.2x10-13 1500 UNITS μA nA MW pF nm V W/ √ Hz nS **Response time of 10% to 90% is specified at 660nm wavelength light. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com 1150 1100 950 1050 Wavelength (nm) 1000 250 * 1/16 inch from case for 3 seconds max. 0.10 0.00 900 °C 850 +224 0.30 0.20 800 +100 0.50 0.40 750 Soldering Temperature* -40 °C °C 700 TS +125 650 Operating Temperature -40 0.70 0.60 600 TO V 550 Storage Temperature 25 500 TSTG UNITS 450 Reverse Voltage MAX 350 VBR MIN 300 PARAMETER 0.80 Responsivity (A/W) SYMBOL Optical encoder Position sensor Industrial controls Instrumentation 400 FEATURES