UV Enhanced GaN Detectors PDU-G102B Advanced Photonix, Inc. PACKAGE DIMENSIONS INCH [mm] Ø.210 [5.35] .055 [1.40] 2X Ø.017 [0.43] Ø .118 [3.00] CATHODE VIEWING ANGLE 61° ANODE .100 [2.54] .500 [12.70] Ø.181 [4.60] .087 [2.21] CHIP CHIP DIMENSIONS INCH [mm] .016 [0.40] SQ TO-46 PACKAGE .0134 [0.340] .0126 [0.320] FEATURES • • • • 320nm UVB response Visible & NIR blind Photovoltaic operation High shunt resistance ACTIVE AREA = 0.076 mm ² DESCRIPTION APPLICATIONS The PDU-G102B is a GaN UV photodiode with a spectral range from 200nm to 320nm and is ideal for UVB sensing applications available in a TO-46 can package. • • • • SPECTRAL RESPONSE ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED PARAMETER MIN MAX UNITS 5 V VBR Reverse Voltage TSTG Storage Temperature -40 +90 °C TO Operating Temperature -30 +85 °C TS Soldering Temperature* +260 °C 1.000 Responsivity (A/W) SYMBOL UVB power meters Sun dosimeters UV epoxy curing UV instrumentation 0.100 0.010 0.001 * 1/16 inch from case for 3 seconds max. Wavelength (nm ) ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL ISC ID RSH CJ lrange R VBR tr CHARACTERISTIC Short Circuit Current Dark Current Shunt Resistance Junction Capacitance Spectral Application Range Responsivity Breakdown Voltage Response Time TEST CONDITIONS UVI = 1 VR = 1V VR = 10 mV VR = 0V, f = 1 MHz Spot Scan l= 350nm V, VR = 0 V I = 1μA RL = 1KΩ,VR = 1V MIN 0.45 TYP 1 0.05 1 24 200 MAX 1 320 0.10 10 10 15 UNITS nA nA GW pF nm A/W V nS © 2007 Advanced Photonix, Inc. All rights reserved. Specifications and output data subject to change without notice. Advanced Photonix, Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com REV 4/19/07 400 390 380 370 360 350 340 330 320 310 300 290 280 270 260 250 240 230 0.000