ADVANCEDPHOTONIX PDU

UV Enhanced GaN Detectors
PDU-G102B
Advanced Photonix, Inc.
PACKAGE DIMENSIONS INCH [mm]
Ø.210 [5.35]
.055 [1.40]
2X Ø.017
[0.43]
Ø .118 [3.00]
CATHODE
VIEWING
ANGLE
61°
ANODE
.100 [2.54]
.500
[12.70]
Ø.181 [4.60]
.087 [2.21]
CHIP
CHIP DIMENSIONS INCH [mm]
.016 [0.40] SQ
TO-46 PACKAGE
.0134 [0.340]
.0126 [0.320]
FEATURES
•
•
•
•
320nm UVB response
Visible & NIR blind
Photovoltaic operation
High shunt resistance
ACTIVE AREA = 0.076 mm ²
DESCRIPTION
APPLICATIONS
The PDU-G102B is a GaN UV photodiode with a
spectral range from 200nm to 320nm and is ideal for
UVB sensing applications available in a TO-46 can
package.
•
•
•
•
SPECTRAL RESPONSE
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
PARAMETER
MIN
MAX
UNITS
5
V
VBR
Reverse Voltage
TSTG
Storage Temperature
-40
+90
°C
TO
Operating Temperature
-30
+85
°C
TS
Soldering Temperature*
+260
°C
1.000
Responsivity (A/W)
SYMBOL
UVB power meters
Sun dosimeters
UV epoxy curing
UV instrumentation
0.100
0.010
0.001
* 1/16 inch from case for 3 seconds max.
Wavelength (nm )
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
ISC
ID
RSH
CJ
lrange
R
VBR
tr
CHARACTERISTIC
Short Circuit Current
Dark Current
Shunt Resistance
Junction Capacitance
Spectral Application Range
Responsivity
Breakdown Voltage
Response Time
TEST CONDITIONS
UVI = 1
VR = 1V
VR = 10 mV
VR = 0V, f = 1 MHz
Spot Scan
l= 350nm V, VR = 0 V
I = 1μA
RL = 1KΩ,VR = 1V
MIN
0.45
TYP
1
0.05
1
24
200
MAX
1
320
0.10
10
10
15
UNITS
nA
nA
GW
pF
nm
A/W
V
nS
© 2007 Advanced Photonix, Inc. All rights reserved. Specifications and output data subject to change without notice.
Advanced Photonix, Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com
REV 4/19/07
400
390
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370
360
350
340
330
320
310
300
290
280
270
260
250
240
230
0.000