ADVANCEDPHOTONIX SD085-23-21-021

Red Enhanced Quad Cell Silicon Photodiode
SD 085-23-21-021
PACKAGE
DIMENSIONS INCH [mm]
PACKAGE DIMENSIONS INCH [mm]
.130 [3.30]
.120 [3.05]
45°
.075 [1.90]
5X Ø.018 [0.46]
1
5
Ø.200 [5.08]
PIN CIRCLE
Ø.225 [5.72]
Ø.215 [5.46] 86°
VIEWING
Ø.330 [8.38]
ANGLE
Ø.320 [8.13]
4
B
C
A
D
CHIP PERIMETER
3
Ø .362 [9.19]
Ø .357 [9.07]
5X .50 [12.7] MIN
A
CHIP DIMENSIONS INCH [mm]
4X .059 [1.50] SQUARE
ACTIVE AREA
5
CHIP DIMENSIONS INCH [mm]
C
D
B
A
2
DESCRIPTION
APPLICATIONS
The SD 085-23-21-021 is a red enhanced quad-cell
silicon photodiode used for nulling, centering, or
measuring small positional changes packaged in a
hermetic TO-5 metal package.
• Emitter Alignment
• Position sensing
• Medical and Industrial
SPECTRAL RESPONSE
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
+125
+240
°C
0.50
0.40
0.30
0.20
0.10
Wavelength (nm)
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
ID
RSH
Dark Current
Shunt Resistance
CJ
Junction Capacitance
lrange
Spectral Application Range
VR = 5 V
VR = 10 mV
VR = 0 V, f = 1 MHz
VR = 5 V, f = 1 MHz
Spot Scan
l= 633nm, VR = 0 V
l= 900nm, VR = 0 V
I = 10 μA
VR = 0V @ l=950nm
RL = 50 Ω,VR = 0 V
RL = 50 Ω,VR = 10 V
R
Responsivity
VBR
NEP
Breakdown Voltage
Noise Equivalent Power
tr
Response Time**
MIN
TYP
MAX
UNITS
0.6
3.5
nA
MW
350
45
9
350
0.32
0.50
pF
1100
0.36
0.55
50
2.5x10-14
190
13
nm
A/W
V
W/ √ Hz
nS
**Response time of 10% to 90% is specified at 660nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com
1150
1100
1050
950
900
250
850
0.00
* 1/16 inch from case for 3 seconds max.
800
Soldering Temperature*
-40
°C
°C
750
TS
+150
700
Operating Temperature
-55
0.60
650
TO
V
600
Storage Temperature
50
550
TSTG
0.70
UNITS
500
Reverse Voltage
MAX
450
VBR
MIN
300
PARAMETER
Responsivity (A/W)
SYMBOL
D
TO-5 PACKAGE
400
Low noise
Red enhanced
High shunt resistance
High response
1
SCHEMATIC
.0004 [0.010] GAP
350
•
•
•
•
4
C
TO-46 PACKAGE
.0004 [0.010] GAP
FEATURES
3
B
1000
.148 [3.76]
SQUARE
2