ADVANCEDPHOTONIX SD200-11-31-241

Red Enhanced Ultra Low Capacitance Silicon Photodiode
SD 200-11-31-241
PACKAGE
DIMENSIONS INCH [mm]
PACKAGE DIMENSIONS INCH [mm]
.208 [5.28]
.193 [4.90]
.100 [2.54]
Ø.555 [14.10]
Ø.545 [13.84]
Ø.300 [7.62]
PIN CIRCLE
Ø.435 [11.05]
Ø.425 [10.80]
Ø.490 [12.45]
Ø.480 [12.19]
95°
VIEWING
ANGLE
1
2
3X Ø.018 [0.46]
3
.016 [0.41] MAX
GLASS ABOVE CAP TOP EDGE
3X 1.50 [38.1]
CHIP
DIMENSIONS INCH
CHIP
DIMENSIONS
INCH[mm]
[mm]
1 ANODE
.222 [5.64]
SQUARE
2 CASE GROUND
3 CATHODE
Ø.200 [5.08]
ACTIVE AREA
TO-8 PACKAGE
SCHEMATIC
TO-8 PACKAGE
DESCRIPTION
APPLICATIONS
The SD 200-11-31-241 is an ultra low capacitance
silicon PIN photodiode, red enhanced, packaged in a
leaded hermetic TO-8 metal package.
• Military
• Industrial
• Medical
SPECTRAL RESPONSE
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
+125
+240
°C
* 1/16 inch from case for 3 seconds max.
0.50
0.40
0.30
0.20
0.10
Wavelength (nm)
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
ID
CHARACTERISTIC
Dark Current
CJ
Junction Capacitance
lrange
R
VBR
NEP
Spectral Application Range
Responsivity
Breakdown Voltage
Noise Equivalent Power
tr
Response Time**
TEST CONDITIONS
VR = 50V
VR = 0V, f = 1 MHz
VR = 50V, f = 1 MHz
Spot Scan
l= 900nm, VR = 0 V
I = 10 μA
VR = 5V @ l=950nm
RL = 50 Ω,VR = 0 V
RL = 50 Ω,VR = 50 V
MIN
350
0.50
TYP
50
110
11
MAX
200
pF
1100
0.55
75
3.0 x10-13
190
8
UNITS
nA
nm
A/W
V
W/ √ Hz
nS
**Response time of 10% to 90% is specified at 660nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com
1150
1100
1050
950
1000
900
250
0.00
850
Soldering Temperature*
-40
°C
°C
800
TS
+150
750
Operating Temperature
-55
0.60
700
TO
V
650
Storage Temperature
75
600
TSTG
0.70
UNITS
550
Reverse Voltage
MAX
500
VBR
MIN
300
PARAMETER
Responsivity (A/W)
SYMBOL
450
Low noise
Red enhanced
High shunt resistance
High response
400
•
•
•
•
350
FEATURES