AME, Inc. AME8831 n General Description 150mA Hi-PSRR, Low-Quiescent LDO with In-Rush Current Control For USB Application n Applications l Instrumentation The AME8831 family of positive, linear regulators feature low quiescent current (17µA typ.) with low dropout voltage, making them ideal for battery applications. The space-saving SOT-25 package is attractive for “ Pocket” and “ Hand Held” applications. l Portable Electronics l Wireless Devices l Cordless Phones l PC Peripherals These rugged devices have both Thermal Shutdown, and Current limitation to prevent device failure under the “ Worst” of operating conditions. In applications requires a low noise regulated supply. The AME8831 family uses the SR pin to program the output voltage’ s slew rate to control the in-rush current. This is specifically used in the USB application where large load capacitance is present at start-up. l Battery Powered Widgets l Electronic Scales n Function Block Diagram VOUT VIN * EN or EN 10 k The AME8831 also features a logic-enabled sleep mode to shutdown the regulator, reducing quiescent current to 1µA typical at TA= 25oC. The AME8831 is stable with an output capacitance of 4.7µF or larger. Current Limit / Thermal Protection AMP R1 Vref GND R2 SR * AME8831A: EN, AME8831B: EN n Features n Typical Application l Guaranteed 150mA Output l Dropout Voltage Typically 150 mV at 150 mA V IN VIN l 17µA Quiescent Current l Over-Temperature Shutdown SR AME8831A 1µF EN GND VOUT l Over-Current Limitation 0.01µF + 4.7µF l Noise Reduction Bypass Capacitor l Power-Saving Shutdown Mode l Space-Saving SOT-25 Package l Factory Pre-set Output Voltages l Enable pin option VIN l EN active low enable l EN active high enable l All AME's Lead Free Products Meet RoHS Standards VIN VIN 1µF SR AME8831B EN GND VOUT 0.01µF + 4.7µF 1 AME, Inc. 150mA Hi-PSRR, Low-Quiescent LDO with In-Rush Current Control For USB Application AME8831 n Pin Configuration SOT-25 Top View 5 SOT-25 Top View 4 AME8831 AME8831A 5 4 1. VIN 2. GND 2. GND AME8831 3. EN 4. SR 2 3 3. EN 4. SR 5. VOUT 1 AME8831B 1. VIN 5. VOUT * Die Attach: Conductive Epoxy 1 2 3 * Die Attach: Conductive Epoxy n Pin Description 2 Pin Number Pin Name Pin Description 1 VIN 2 GND 3 EN, EN 4 SR The SR terminal is used to control the in-rush current. 5 VOUT The VOUT terminal is the regulated output of the device. The VIN terminal is the input to the device. Regulator ground. EN active low enable, EN active high enable. AME, Inc. 150mA Hi-PSRR, Low-Quiescent LDO with In-Rush Current Control For USB Application AME8831 n Ordering Information AME8831 x x x x xxx x Special Feature Voltage Number of Pins Package Type Operating Ambient Temperature Range Pin Configuration Pin Configuration A: 1. VIN 2. GND 3. EN 4. SR 5. VOUT Operating Ambient Number Temperature Package Type of Range Pins E: -40OC to +85OC E: SOT-2X V: 5 Voltage Special Feature 330: V=3.3V Y: Lead free & Low profile Z: Lead free B: 1. VIN 2. GND 3. EN 4. SR 5. VOUT n Ordering Information Part Number Marking* Output Voltage Package Operating Ambient Temperature Range AME8831AEEV330Z BDVww 3.3V SOT-25 - 40oC to + 85oC AME8831AEEV330Y BDVww 3.3V TSOT-25 - 40oC to + 85oC Note: ww represents the date code and pls refer to the Date Code Rule befor Package Dimension. * A line on top of the first character represents lead free plating such as BDVww. Please consult AME sales office or authorized Rep./Distributor for output voltage and package type availability. 3 AME, Inc. 150mA Hi-PSRR, Low-Quiescent LDO with In-Rush Current Control For USB Application AME8831 n Absolute Maximum Ratings Parameter Maximum Unit 6 V Output Current PD / (V IN - VOUT) mA Output Voltage GND-0.3 to VIN +0.3 V Input Voltage C* ESD Classification Caution: Stress above the listed absolute maximum rating may cause permanent damage to the device HBM C: 4000V+ n Recommended Operating Conditions Parameter Symbol Rating Ambient Temperature Range TA - 40 to +85 Junction Temperature Range TJ - 40 to +125 Storage Temperature Range TSTG -65 to +150 Unit o C n Thermal Information Parameter Package Die Attach Thermal Resistance* (Junction to Case) Thermal Resistance (Junction to Ambient) Maximum θJC 81 Unit o SOT-25 Conductive Epoxy Internl Power Dissipation θJA 260 PD 400 C/W mW Maximum Junction Temperature 150 o C Solder Iron (10 Sec)** 350 o C * Measure θJC on center of molding compound if IC has no tab. ** MIL-STD-202G 210F 4 Symbol AME, Inc. 150mA Hi-PSRR, Low-Quiescent LDO with In-Rush Current Control For USB Application AME8831 n Electrical Specifications (contd.) EN=0, TJ = -40 to +125oC, VIN = VOUT(typ) +1V, IOUT = 1mA, COUT = 4.7µF, C(SR) = 0.01µF (unless otherwise noted) Parameter Input Voltage Symbol Test Condition Min VIN (See Note1) 3.5 TJ = 25oC Output Voltage VOUT 10µA < IOUT < 150mA 3.8V < V IN < 5.5V IOUT (See Note2) Output Current Limit ILIM VOUT = 0V IQ 200 o TJ = 25 C 10µA < IOUT < 150mA TJ = -40 oC to +125oC 4.3V<VIN <5.5V TJ = 25oC -0.2 4.3V<VIN <5.5V TJ= -40 oC to +125oC -0.3 REGLINE Load Regulation (See Note 4) REGLOAD 1mA <= IOUT <= 150mA 5.5 V 350 150 mA 750 mA 17 TJ = 25oC 30 0.1 V 0.2 0.3 µA %/V -0.02 0.0025 0.02 %/mA TJ = 25oC 150 Dropout Voltage VDO Over Temerature Shutdown OTS 150 Over Temerature Hysterisis OTH 20 TC 30 ppm 65 dΒ VOUT Temperature Coefficient VOUT = VOUT(NOM) -2.0% Units 3.399 0 10µA < IOUT < 150mA Line Regulation (See Note 3) Max 3.3 TJ = -40 oC to +125oC 3.201 Output Current Quiescent Current Typ o o TJ = -40 C to +125 C 300 mV o C f = 1 kHz, IOUT = 150mA Power Supply Ripple Rejection PSRR COUT =10µF, TJ = 25oC C(SR) = 0.01µF Note1 : VIN(min) = VOUT(min) + VDO (max load) Note2 : Continuous output current and operating junction temperature are limited by internal protection circuitry, but it is not recommended that the device operate under conditions beyond those specified in this table for extended periods of time. Note3: Line Reg: ∆Vout ×100% ∆Vin Vout Note4: Load Reg: ∆Vout ×100% Vout ∆I 5 AME, Inc. 150mA Hi-PSRR, Low-Quiescent LDO with In-Rush Current Control For USB Application AME8831 n Electrical Specifications Parameter Output Voltage Noise Test Condition Symbol eN BW=200Hz to 100kHz IOUT = 150mA COUT = 10µF Min TJ = 25oC Typ Max Units µVRMS 100 C(SR) =0 .47µF EN, EN Input Threshold VEH VIN = 3.5V to 5.5V VEL EN, EN Input Bias Current Shutdown Current IEN , IEN EN = VIN , EN = 0, VIN = 3.5V to 5.5V ISD EN = 0, EN = VIN Turn_on Time t ON C OUT= 10µF C(SR) = 0.1µF C(SR) = 0.22µF 6 VIN 0 0.4 1 C(SR)= 0.01µF R LOAD = 22Ω 2.0 V 1 µA 2 µA 20 o TJ = 25 C 200 450 ms AME, Inc. AME8831 150mA Hi-PSRR, Low-Quiescent LDO with In-Rush Current Control For USB Application n Detail Description The AME8831 family of CMOS regulators contain a PMOS pass transistor, voltage reference, error amplifier, over-current protection, and thermal shutdown function. The P-channel pass transistor receives data from the error amplifier, over-current limit, and thermal protection circuits. During normal operation, the error amplifier compares the output voltage to a precision reference. Over-current and Thermal shutdown circuits become active when the junction temperature exceeds 150oC, or the current exceeds about 350mA. During thermal shutdown, the output voltage remains low. Normal operation is restored when the junction temperature drops below 120oC. The AME8831 switches from voltage mode to current mode when the load exceeds the rated output current. This prevents over-stress. n External Capacitors The AME8831 is stable with an output capacitor to ground of 2.2µF or greater. Ceramic capacitors have the lowest ESR, and will offer the best AC performance. Conversely, Aluminum Electrolytic capacitors exhibit the highest ESR, resulting in the poorest AC response. Unfortunately, large value ceramic capacitors are comparatively expensive. One option is to parallel a 0.1µF ceramic capacitor with a 10µF Aluminum Electrolytic. The benefit is low ESR, high capacitance, and low overall cost. A second capacitor is recommended between the input and ground to stabilize VIN. The input capacitor should be at least 0.1µF to have a beneficial effect. All capacitors should be placed in close proximity to the pins. A “ Quiet” ground termination is desirable. This can be achieved with a “ Star” connection n Enable The Enable pin is optional. EN for active high enable, EN for active low enable. When disable the Enable Pin EN=0, EN=VIN, the PMOS pass transistor shuts off, and all internal circuits are powered down. In this state, the standby current is less than 1µA. 7 AME, Inc. 150mA Hi-PSRR, Low-Quiescent LDO with In-Rush Current Control For USB Application AME8831 Output Noise Spectral Density Output Voltage vs Load Current 10 3.26 Noise (µV/ √ Hz) Output Voltage (V) VIN=4.3V COUT=4.7µF C(SR)=0.47µF V IN=4.3V T J=25℃ 3.25 3.24 3.23 3.22 3.21 IO =150mA 1 IO=1mA 3.2 3.19 0 15 30 45 60 75 90 105 120 135 0.1 100 150 1000 10000 Output Impedance vs Frequency Quiescent Current vs Free Air Temp. 2.0 30 VIN =4.3V C O=4.7 µF 1.6 Output Impedance Quiescent Current (uA) 1.8 25 IO=1mA 20 IO=150mA 15 10 1.4 1.2 1.0 IO =50mA 0.8 0.6 0.4 5 0.2 0 -40 -20 -5 25 55 85 0 100 125 IO=150mA 1000 10000 Dropout Voltage vs. Temperature Ripple Rejection vs Frequency V IN =4.3V V OUT=3.3V COUT =10µF C(SR)=0.47µF VIN=4.3V 100 Ripple Rejection (dB) 250 Dropout Voltage (mV) 1000000 120 300 200 IO=150mA 150 100 IO=1mA 80 60 I O=150mA 40 20 50 -20 25 Temperature 8 100000 Frequency (Hz) Temperature (o C) 0 -40 100000 Frequency (Hz) Load Current (mA) 85 (o C) 125 0 100 1000 10000 Frequency (Hz) 100000 1000000 AME, Inc. 150mA Hi-PSRR, Low-Quiescent LDO with In-Rush Current Control For USB Application AME8831 VOUT vs Temperature Line Transient Response IOUT=1mA 3.26 5.3 VOUT (V) 4.3 Output Voltage (mV) Input Voltage (V) 3.28 3.24 IOUT=150mA 3.22 3.20 VIN=4.3V 3.18 -40 55 85 125 (Start-Up) (Start-Up) Enable Voltage (V) Output Voltage, Enable Voltage vs Time 0 3 2 0 25 Output Voltage, Enable Voltage vs Time 5 1 -20 Temperature (oC) Output Voltage (V) Output Voltage (V) Enable Voltage (V) Time (20µS/Div) V IN =4.3V V OUT=3.3V IO=150mA C (SR)=0.22µF CO =10µF TJ =25oC Time (10mS/Div) 5 0 C (SR) =0.01µF 3 C (SR)=0.1 µF 2 1 0 V IN =4.3V V OUT=3.3V IO =150mA C O=10µF TJ =25 oC Time (10mS/Div) Output Current (mA) Load Transient Response 200 100 0 Output Voltage (mV) 0 -50 VIN =4.3V VOUT =3.3V C O=10 µF TJ=25oC Time (20µS/Div) 9 AME, Inc. 150mA Hi-PSRR, Low-Quiescent LDO with In-Rush Current Control For USB Application AME8831 n Date Code Rule Marking Date Code Year A A A W W xxx0 A A A W W xxx1 A A A W W xxx2 A A A W W xxx3 A A A W W xxx4 A A A W W xxx5 A A A W W xxx6 A A A W W xxx7 A A A W W xxx8 A A A W W xxx9 n Tape and Reel Dimension SOT-25 P W AME AME PIN 1 Carrier Tape, Number of Components Per Reel and Reel Size 10 Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size SOT-25 8.0±0.1 mm 4.0±0.1 mm 3000pcs 180±1 mm AME, Inc. 150mA Hi-PSRR, Low-Quiescent LDO with In-Rush Current Control For USB Application AME8831 n Tape and Reel Dimension TSOT-25 P W AME AME PIN 1 Carrier Tape, Number of Components Per Reel and Reel Size Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size TSOT-25 8.0±0.1 mm 4.0±0.1 mm 3000pcs 180±1 mm 11 AME, Inc. 150mA Hi-PSRR, Low-Quiescent LDO with In-Rush Current Control For USB Application AME8831 n Package Dimension SOT-25 Top View Side View SYMBOLS D L MIN E H MILLIMETERS θ1 S1 A 0.15 0.0000 0.0059 b 0.30 0.55 0.0118 0.0217 D 2.70 3.10 0.1063 0.1220 E 1.40 1.80 0.0551 0.0709 1.90 BSC e θ1 2.60 0.07480 BSC 3.00 0.37BSC 0 o 0.10236 0.11811 0.0146BSC 10 o 0 o 10 0.95BSC 0.0374BSC MILLIMETERS INCHES S1 o A1 A MAX 0.0472REF 0.00 L Front View MIN A1 H e MAX 1.20REF INCHES b TSOT-25 Top View Side View SYMBOLS MIN MAX MIN MAX A+A1 0.90 1.25 0.0354 0.0492 b 0.30 0.50 0.0118 0.0197 c 0.09 0.25 0.0035 0.0098 D 2.70 3.10 0.1063 0.1220 E 1.40 1.80 0.0551 0.0709 E H L D θ1 S1 e 1.90 BSC e H 2.40 b 12 A1 A θ1 S1 3.00 0.35BSC L Front View 0.07480 BSC 0 o 10 0.95BSC 0.09449 0.11811 0.0138BSC o 0o 10o 0.0374BSC www.ame.com.tw E-Mail: [email protected] Life Support Policy: These products of AME, Inc. are not authorized for use as critical components in life-support devices or systems, without the express written approval of the president of AME, Inc. AME, Inc. reserves the right to make changes in the circuitry and specifications of its devices and advises its customers to obtain the latest version of relevant information. AME, Inc. , April 2006 Document: 1009-DS8831-A.01 Corporate Headquarter U.S.A.(Subsidiary) AME, Inc. Analog Microelectronics, Inc. 2F, 302 Rui-Guang Road, Nei-Hu District Taipei 114, Taiwan. Tel: 886 2 2627-8687 Fax: 886 2 2659-2989 3100 De La Cruz Blvd., Suite 201 Santa Clara, CA. 95054-2046 Tel : (408) 988-2388 Fax: (408) 988-2489