September 2006 Advance Information AS7C3513C ® 3.3 V 32K X 16 CMOS SRAM Features • Industrial (-40o to 85oC) temperature • Organization: 32,768 words × 16 bits • Center power and ground pins for low noise • High speed - 10 ns address access time - 5 ns output enable access time • Low power consumption via chip deselect • Upper and Lower byte pin • Easy memory expansion with CE, OE inputs • TTL-compatible, three-state I/O Logic block diagram I/O0–I/O7 I/O8–I/O15 Control circuit Address decoder A8 WE I/O buffer NC A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 VCC GND I/O4 I/O5 I/O6 I/O7 WE A14 A13 A12 A11 NC UB OE LB CE 9/5/06, v 1.0 Alliance Memory 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 AS7C3513C A7 44-Pin SOJ (400 mil), TSOP 2 GND A14 A6 A13 A5 A11 A4 A12 A3 • ESD protection ≥ 2000 volts VCC 32,768 × 16 Array A9 A2 A10 A1 - 44-pin 400 mil SOJ - 44-pin TSOP 2 Pin arrangement Address decoder A0 • JEDEC standard packaging 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A4 A5 A6 OE UB LB I/O15 I/O14 I/O13 I/O12 GND VCC I/O11 I/O10 I/O9 I/O8 NC A7 A8 A9 A10 NC P. 1 of 9 Copyright © Alliance Memory. All rights reserved. AS7C3513C ® Functional description The AS7C3513C is a 3V high-performance CMOS 524,288-bit Static Random Access Memory (SRAM) device organized as 32,768 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10 ns with output enable access times (tOE) of 5 ns are ideal for highperformance applications. When CE is high, the device enters standby mode. A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O0 through I/O15 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE). A read cycle is accomplished by asserting output enable (OE) and chip enable (CE) with write enable (WE) high. The chips drive I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive or write enable is active, output drivers stay in high-impedance mode. The device provides multiple center power and ground pins, and separate byte enable controls, allowing individual bytes to be written and read. LB controls the lower bits, I/O0 through I/O7, and UB controls the higher bits, I/O8 through I/O15. All chip inputs and outputs are TTL-compatible, and operation is from a single 3.3 V supply. AS7C3513C is packaged in common industry standard packages. Absolute maximum ratings Parameter Symbol Min Max Unit Voltage on VCC relative to GND Vt1 –0.50 +4.60 V Voltage on any pin relative to GND Vt2 –0.50 VCC +0.50 V Power dissipation PD – 1.25 W Storage temperature (plastic) Tstg –55 +125 °C Ambient temperature with VCC applied Tbias –55 +125 °C DC current into outputs (low) IOUT – 50 mA Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Truth table CE WE OE LB UB I/O0–I/O7 I/O8–I/O15 Mode H X X X X High Z High Z Standby (ISB), ISBI) L H L L H DOUT High Z Read I/O0–I/O7 (ICC) L H L H L High Z DOUT Read I/O8–I/O15 (ICC) L H L L L DOUT DOUT Read I/O0–I/O15 (ICC) L L X L L DIN DIN Write I/O0–I/O15 (ICC) L L X L H DIN High Z Write I/O0–I/O7 (ICC) L L X H L High Z DIN Write I/O8–I/O15 (ICC) L L H X H X X H X H High Z High Z Output disable (ICC) Key: H = high, L = low, X = don’t care. 9/5/06, v 1.0 Alliance Memory P. 2 of 9 AS7C3513C ® Recommended operating conditions Parameter Symbol Min Nominal Supply voltage VCC 3.0 3.3 3.6 V Input voltage VIH 2.0 – VCC + 0.5 V VIL –0.5 – 0.8 Ambient operating temperature (industrial) TA –40 Max – Unit V o 85 C VIL = -2.0V for pulse width less than 5ns, once per cycle. VIH = VCC +2.0V for pulse width less than 5ns, once per cycle. DC operating characteristics (over the operating range)1 AS7C3513C-10 Parameter Sym Test conditions Min Max Unit Input leakage current | ILI | VCC = Max VIN = GND to VCC – 5 µA Output leakage current | ILO | VCC = Max CE = VIH, VOUT = GND to VCC – 5 µA ICC VCC = Max, CE ≤ VIL, IOUT = 0mA f = fMax – 160 mA ISB VCC = Max, CE ≥ VIH, f = fMax – 45 mA ISB1 VCC = Max, CE ≥ VCC–0.2 V, VIN ≤ 0.2 V or VIN ≥ VCC–0.2 V, f = 0 – 10 mA VOL IOL = 8 mA, VCC = Min – 0.4 V VOH IOH = –4 mA, VCC = Min 2.4 – V Operating power supply current Standby power supply current Output voltage Capacitance (f = 1MHz, Ta = 25 °C, VCC = NOMINAL)2 Symbol Signals Test conditions Max Unit Input capacitance Parameter CIN A, CE, WE, OE, LB, UB VIN = 3dV 6 pF I/O capacitance CI/O I/O VOUT = 3dV 7 pF Note: 1. This parameter is guaranteed by device characterization, but is not production tested. 9/5/06, v 1.0 Alliance Memory P. 3 of 9 AS7C3513C ® Read cycle (over the operating range)3,9 AS7C3513C-10 Parameter Symbol Min Max Unit tRC 10 – ns Address access time tAA – 10 ns 3 Chip enable (CE) access time tACE – 10 ns 3 Output enable (OE) access time tOE – 5 ns Output hold from address change tOH 4 – ns 5 CE low to output in low Z tCLZ 4 – ns 4, 5 CE high to output in high Z tCHZ – 5 ns 4, 5 OE low to output in low Z tOLZ 0 – ns 4, 5 Byte select access time tBA – 5 ns Byte select Low to low Z tBLZ 0 – ns 4, 5 Byte select High to high Z tBHZ – 5 ns 4, 5 OE high to output in high Z tOHZ – 5 ns 4, 5 Power up time tPU 0 – ns 4, 5 Power down time tPD – 10 ns 4, 5 Read cycle time Notes Key to switching waveforms Rising input Falling input Undefined output/don’t care Read waveform 1 (address controlled)3,6,7,9 tRC Address DataOUT tAA tOH Previous data valid tOH Data valid Read waveform 2 (OE, CE, UB, LB controlled)3,6,8,9 tRC Address tAA OE tOE tOLZ tOH CE tLZ tOHZ tHZ tACE LB, UB tBLZ tBA DataIN 9/5/06, v 1.0 tBHZ Data valid Alliance Memory P. 4 of 9 AS7C3513C ® Write cycle (over the operating range) 11 AS7C3513C-10 Parameter Symbol Min Max Unit Notes Write cycle time tWC 10 – ns Chip enable (CE) to write end tCW 7 – ns Address setup to write end tAW 7 – ns Address setup time tAS 0 – ns Write pulse width tWP 7 – ns Write recovery time tWR 0 – ns Address hold from end of write tAH 0 – ns Data valid to write end tDW 5 – ns Data hold time tDH 0 – ns 5 Write enable to output in high Z tWZ – 5 ns 4, 5 Output active from write end tOW 3 – ns 4, 5 Byte select low to end of write tBW 7 – ns Write waveform 1 (WE controlled)10,11 tWC tAH Address tWR tCW CE tBW LB, UB tAW tAS tWP WE tDW DataIN Data valid tWZ DataOUT 9/5/06, v 1.0 tDH Data undefined Alliance Memory tOW high Z P. 5 of 9 AS7C3513C ® Write waveform 2 (CE controlled)10,11 tWC tAH Address tAS tWR tCW CE tAW tBW LB, UB tWP WE tDH tDW Data valid DataIN tWZ tCLZ DataOUT high Z Data undefined tOW high Z AC test conditions – – – – Output load: see Figure B. Input pulse level: GND to 3.0 V. See Figure A. Input rise and fall times: 3 ns. See Figure A. Input and output timing reference levels: 1.5 Thevenin Equivalent: 168 Ω DOUT +1.728 V +3.3 V 320 Ω +3.0 V GND DOUT 90% 10% 255 Ω 90% 3 ns 10% C13 GND Figure B: 3.3 V Output load Figure A: Input pulse Notes 1 2 3 4 5 6 7 8 9 10 11 12 13 During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification. This parameter is sampled, but not 100% tested. For test conditions, see AC Test Conditions, Figures A and B. These parameters are specified with CL = 5 pF, as in Figures B. Transition is measured ± 200 mV from steady-state voltage. This parameter is guaranteed, but not tested. WE is high for read cycle. CE and OE are low for read cycle. Address is valid prior to or coincident with CE transition low. All read cycle timings are referenced from the last valid address to the first transitioning address. N/A All write cycle timings are referenced from the last valid address to the first transitioning address. Not applicable. C = 30 pF, except all high Z and low Z parameters where C = 5 pF. 9/5/06, v 1.0 Alliance Memory P. 6 of 9 AS7C3513C ® Package dimensions c 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 E He 44-pin TSOP 2 D l A2 0–5° A1 e b Min (mm) Max (mm) A1 0.05 0.15 A2 0.95 1.05 b 0.30 0.45 c 0.120 0.21 D 18.31 18.52 E 10.06 10.26 He 11.68 11.94 A 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 1718 19 20 21 22 A 44-pin TSOP 2 e l 1.2 0.80 (typical) 0.40 0.60 44-pin SOJ 400 mil D e Min (in) Max (in) 44-pin SOJ E1 E2 Pin 1 c B A2 A A1 b Seating plane E A 0.128 0.148 A1 0.025 – A2 0.105 0.115 B 0.026 0.032 b 0.015 0.020 c 0.007 0.013 D 1.120 1.130 E E1 0.395 0.405 E2 0.435 0.445 e 9/5/06, v 1.0 Alliance Memory 0.370 NOM 0.050 NOM P. 7 of 9 AS7C3513C ® Ordering codes Volt/Temp 10 ns Plastic SOJ, 400 mil Package 3.3V industrial AS7C3513C-10JIN TSOP 2, 10.2 x 18.4 mm 3.3V industrial AS7C3513C-10TIN Part numbering system AS7C SRAM prefix 9/5/06, v 1.0 X Voltage: 3 = 3.3 V CMOS 513B –XX Device Access number time X X Package: Temperature J = SOJ 400 mil I = industrial: -40° C T = TSOP 2, 10.2 x 18.4 mm to 85° C Alliance Memory X N = Lead Free Part P. 8 of 9 AS7C3513C ® ® Alliance Memory Incorporated 1116 South Amphlett San Mateo, CA 94402 Tel: 650-525-3737 Fax: 650-525-0449 Copyright © Alliance Memory All Rights Reserved Part Number: AS7C3513C Document Version: v 1.0 www.alliancememory.com © Copyright 2003 Alliance Memory Incoporated. 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