ANALOGICTECH MMBT4416

MMBT4416
MMBT4416
N-Channel RF Amplifiers
G
• This device is designed for RF amplifiers.
• Sourced from process 50.
S
D
SOT-23
Mark: 6A
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
VDG
Drain-Gate Voltage
Parameter
Value
30
Units
V
VGS
Gate-Source Voltage
30
V
IG
Gate Current
10
mA
PD
Total Device Dissipation @TA=25°C
Derate above 25°C
225
1.8
mW
mW/°C
RθJA
Thermal Resistance Junction to Ambient
556
°C/W
TJ, TSTG
Junction and Storage Temperature Range
- 55 ~ 150
°C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage
IGSS
Gate Reverse Current
Test Condition
VDS = 0, IG = 1µA
Min.
Typ.
Max.
Units
1
200
nA
nA
30
VGS = 20V, VDS = 0
VGS = 20V, VDS = 0, TA = 150°C
V
VGS(off)
Gate Source Cut-off Voltage
VDS = 15V, ID = 1nA
2.5
6
V
VGS
Gate Source Voltage
VDS = 15V, ID = 0.5mA
-1
-5.5
V
On Characteristics
IDSS
Zero-Gate Voltage Drain Current
VGS = 15V, VGS = 0
5
15
µA
VGS(f)
VDS = 0, IG = 1mA
1
V
Gate-Source Forward Voltage
Small Signal Characteristics
lYfsl
Forward Transfer Admittance
VDS = 15V, VGS = 0, f = 1KHz
7500
µmhos
lyosl
Output Admittance
VDS = 15V, VGS = 0, f = 1KHz
50
µmhos
Ciss
Input Capacitance
VDS = 15V, VGS = 0, f = 1MHz
4
PF
Crss
Reverse Transfer Capacitance
VDS = 15V, VGS = 0, f = 1MHz
0.9
PF
Coss
Output Capacitance
VDS = 15V, VGS = 0, f = 1MHz
2
PF
VDS = 15V, ID = 5mA, Rg = 100Ω,
f = 100MHz
2
4
dB
Functional Characteristics
NF
Noise Figure
Gps
Common Source Power Gain
©2002 Fairchild Semiconductor Corporation
VDS = 15V, ID = 5mA, Rg = 100Ω,
f = 100MHz
4500
18
10
dB
Rev. A, May 2002
MMBT4416
Package Demensions
±0.10
±0.10
2.40
0.40 ±0.03
1.30
0.45~0.60
0.20 MIN
SOT-23
0.03~0.10
0.38 REF
0.40 ±0.03
+0.05
0.12 –0.023
0.96~1.14
0.97REF
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A, May 2002
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intended to be an exhaustive list of all such trademarks.
ACEx™
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QS™
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Quiet Series™
SLIENT SWITCHER®
SMART START™
SPM™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
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SyncFET™
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STAR*POWER is used under license
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
reasonably expected to cause the failure of the life support
or (b) support or sustain life, or (c) whose failure to perform
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H5