AP2625GY RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 D1 ▼ Low Gate Drive ▼ Surface Mount Package -30V RDS(ON) 185mΩ ID G2 G1 BVDSS - 2A S2 S1 Description D2 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is widely used for commercial-industrial applications. S1 D1 G2 SOT-26 S2 G1 Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units -30 V ±12 V 3 -2.0 A 3 -1.6 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current -20 A PD@TA=25℃ Total Power Dissipation 1.2 W Linear Derating Factor 0.01 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 110 ℃/W 201023073-1/4 AP2625GY Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-1.6A - - 185 mΩ VGS=-2.5V, ID=-1A - - 265 mΩ -0.3 - -1.2 V VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS VDS=VGS, ID=-250uA VDS=-5V, ID=-2A - 3.3 - S o VDS=-30V, VGS=0V - - -1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V - - -25 uA Gate-Source Leakage VGS=±12V - - ±100 nA ID=-2A - 4 6 nC Drain-Source Leakage Current (Tj=25 C) IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-24V - 0.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 2 - nC VDS=-15V - 5 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 6 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 20 - ns tf Fall Time RD=15Ω - 3 - ns Ciss Input Capacitance VGS=0V - 265 425 pF Coss Output Capacitance VDS=-25V - 42 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 32 - pF Min. Typ. Max. Units IS=-1A, VGS=0V - - -1.2 V IS=-2A, VGS=0V, - 21 - ns dI/dt=100A/µs - 16 - nC Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 180℃/W when mounted on min. copper pad. THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4 AP2625GY 20 15 T A = 150 o C - 10 V -7.0V -5.0V -4.5V 15 - 10 V -7.0V -5.0V -4.5V 12 -ID , Drain Current (A) -ID , Drain Current (A) T A = 25 o C 10 V G =- 2.5 V 5 9 V G =- 2.5 V 6 3 0 0 0 1 2 3 4 5 6 7 0 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 220 1.6 I D =- 1.6 A V G = -4.5 V ID=-1A T A =25 o C 1.4 Normalized RDS(ON) 200 RDS(ON) (mΩ ) 1 -V DS , Drain-to-Source Voltage (V) 180 160 140 1.2 1.0 0.8 0.6 120 0 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 2.4 2.0 Normalized -VGS(th) (V) 1.4 -IS(A) 1.6 1.2 T j =150 o C T j =25 o C 0.8 1.0 0.6 0.4 0.2 0.0 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP2625GY f=1.0MHz 1000 10 V DS =-24V I D =-2A C iss 8 C (pF) -VGS , Gate to Source Voltage (V) 12 6 100 4 C oss C rss 2 0 10 0 2 4 6 8 1 5 Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthja) 100 10 -ID (A) 9 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 100us 1ms 1 10ms 0.1 100ms 1s DC o T A =25 C Single Pulse 0.01 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + T a 0.01 Rthja = 180℃/W 0.001 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 90% 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4/4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SOT-26 G L L Millimeters C A SYMBOLS MIN NOM MAX A 2.70 2.90 3.10 B 2.60 2.80 3.00 C 1.40 1.60 1.80 D 0.30 0.43 0.55 E 0.00 0.05 0.10 B D H 1.20REF G 1.90REF I 0.12REF J 0.37REF L 0.95REF H E I 1.All Dimension Are In Millimeters. J 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : SOT-26 Part Number Y9XX Date Code