AT12016-21 SILICON ABRUPT VARACTOR DIODE DESCRIPTION: The AT12016-21 is Designed for High Performance RF and Microwave Applications Requiring an Abrupt Variable Capacitance Characteristic. PACKAGE STYLE 21 FEATURES INCLUDE: • High Tuning Ratio, ∆CT = 9.0 MIN. • High Quality Factor, Q = 300 MIN. CP = .20 pF • Hermetic Pkg, LS = .42 nH MAXIMUM RATINGS IF 200 mA VR 120 V PDISS 1.75W @ TC 25 C TJ -55 C to +150 C TSTG -55 C to +150 C θJC 70 C/W O O O O O O CHARACTERISTICS SYMBOL NONE O TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIM UNITS VR IR = 10 µA VF IF = 1 mA 1.0 V IR VR = 100 V 100 µA CT VR = 4 V f = 1.0 MHz 16 20 pF ∆ CT CT0/ CT120 f = 1.0 MHz 9.0 --- Q VR = 4 V f = 50 MHz 300 --- RS IF = 10 mA f = 2400 MHz V 120 18 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 0.9 Ω REV. A 1/1