ASI AT12016-21

AT12016-21
SILICON ABRUPT VARACTOR DIODE
DESCRIPTION:
The AT12016-21 is Designed for High
Performance RF and Microwave
Applications Requiring an Abrupt
Variable Capacitance Characteristic.
PACKAGE STYLE 21
FEATURES INCLUDE:
• High Tuning Ratio, ∆CT = 9.0 MIN.
• High Quality Factor, Q = 300 MIN.
CP = .20 pF
• Hermetic Pkg,
LS = .42 nH
MAXIMUM RATINGS
IF
200 mA
VR
120 V
PDISS
1.75W @ TC 25 C
TJ
-55 C to +150 C
TSTG
-55 C to +150 C
θJC
70 C/W
O
O
O
O
O
O
CHARACTERISTICS
SYMBOL
NONE
O
TC = 25 C
TEST CONDITIONS
MINIMUM TYPICAL
MAXIM
UNITS
VR
IR = 10 µA
VF
IF = 1 mA
1.0
V
IR
VR = 100 V
100
µA
CT
VR = 4 V
f = 1.0 MHz
16
20
pF
∆ CT
CT0/ CT120
f = 1.0 MHz
9.0
---
Q
VR = 4 V
f = 50 MHz
300
---
RS
IF = 10 mA
f = 2400 MHz
V
120
18
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
0.9
Ω
REV. A
1/1